Precipitation of Oxygen and Mechanism of Stacking Fault Formation in Czochralski Silicon Bulk Crystals

1982 ◽  
Vol 14 ◽  
Author(s):  
Kazumi Wada ◽  
Naohisa Inoue ◽  
Jiro Osaka
Keyword(s):  
Growth Model ◽  
Growth Kinetics ◽  
Stacking Faults ◽  
Diffusional Growth ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Diffusion Limited ◽  
Silicon Bulk ◽  
Precipitate Growth ◽  
Kinetics Of

ABSTRACTThis paper describes recent progress on nucleation and growth of oxide precipitates and stacking faults in Czochralski silicon. Conclusions on the growth kinetics of oxide precipitates are drawn from the experiments and analysis of growth kinetics of two-dimensional precipitates: The experimentally obtained growth kinetics, three-quarter power law is theoretically derived and the precipitate growth is demonstrated to be diffusion-limited by oxygen interstitials. The formation mechanism of stacking faults is the Bardeen-Herring mechanism. Based on diffusional growth model, the growth kinetics of stacking faults are analyzed, assuming a coexistence of self-interstitial supersaturation and vacancy undersaturation. It is found that the growth is driven by vacancies in undersaturation. Vacancy component of self-diffusion has been determined and found to be predominant at low temperature. The possibility of growth model proposed for increase of oxide precipitate density during annealing has been excluded. Both processes, homogeneous and heterogeneous nucleation, have been taking place during annealing.

Diffusional Growth Kinetics of Boride Layers on Iron-Chromium Alloys

2008 ◽  
pp. 181-188 ◽  
Author(s):  
V.I. Dybkov ◽  
L.V. Goncharuk ◽  
V.G. Khoruzha ◽  
K.A. Meleshevich ◽  
A.V. Samelyuk ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Diffusional Growth ◽  
Chromium Alloys ◽  
Kinetics Of ◽  
Iron Chromium

Structural Relaxation by Precipitation in Al-Li I. Growth Kinetics of Precipitates

1991 ◽  
Vol 229 ◽  
Author(s):  
R. Kamel ◽  
N. K. Gobran ◽  
M. M. Danial
Keyword(s):  
Growth Kinetics ◽  
Structural Relaxation ◽  
Electrical Resistance ◽  
Physical Property ◽  
Diffusional Growth ◽  
Solvus Line ◽  
Structure Sensitive ◽  
Δ Phase ◽  
Two Phases ◽  
Kinetics Of

AbstractChanges in electrical resistance measured by the four probe method was adopted as a structure sensitive physical property used to trace changes in the atomic microstructure below and above the δ'-solvus line in the Al-Li binary alloys. The kinetics of the growth and dissolution of δ' phase (Al3Li) and the formation of δ phase (AlLi), below and above δ'-solvus line, during the coarsening process were studied by isochronal and isothermal investigations. The diffusional growth of δ'-phase, below the δ'-solvus line, was found to be activated by 0.24 eV. Interpretation of the results showed that this energy involved two events during the coarsening process. The first event seemed to be a breakdown of the bonding between the vacancy-Lithium pair and the second event involved the transport of Li atoms to Al-particles to coarsen δ'; (Al3Li) particles. Furthermore, the study of the temperature dependence of electrical resistance of the stable phases δ' and δ of Al-Li alloys was found to be accompanied by difference in the temperature coefficient of the electrical resistance and was attributed to the change in structure of the two phases considered.

Growth kinetics of oxide precipitates in Czochralski silicon

1985 ◽  
Vol 71 (1) ◽  
pp. 111-117 ◽  
Author(s):  
Kazumi Wada ◽  
Naohisa Inoue
Keyword(s):  
Growth Kinetics ◽  
Czochralski Silicon ◽  
Kinetics Of

Effect of Native Microflora on the Growth Kinetics of Salmonella Enteritidis Strain 04-137 in Raw Ground Chicken

2011 ◽  
Vol 74 (5) ◽  
pp. 735-742 ◽  
Author(s):  
SAKHA M. ZAHER ◽  
HIROSHI FUJIKAWA
Keyword(s):  
Growth Model ◽  
Growth Kinetics ◽  
Salmonella Enteritidis ◽  
Maximum Cell ◽  
Lag Period ◽  
Low Levels ◽  
Native Microflora ◽  
Kinetics Of ◽  
Total Bacteria ◽  
Different Doses

Effects of native microflora (NM) on growth kinetics of Salmonella Enteritidis strain 04-137 were studied in raw ground chicken. First, samples of ground chicken with high and low levels of NM (107.1 and 104.9 CFU/g, respectively) were spiked with Salmonella at doses ranging from 101 to 104 CFU/g. The growth kinetics, including the rate constant of growth, r, and the lag period, were similar, but the maximum cell level, Nmax, was higher at higher initial Salmonella doses for both NM levels. Second, samples of ground chicken with high and low NM levels (106.8 and 104.7 CFU/g, respectively) were spiked with Salmonella and then stored at various constant temperatures ranging from 8 to 32°C. Both Nmax and r for Salmonella were higher at higher temperatures for both NM levels. Although r for total bacteria, which consisted of NM and Salmonella, was also higher at higher temperatures, Nmax was constant at all temperatures for both NM levels. Further, Salmonella growth was compared among samples of ground chicken with high and low NM levels and samples of sterilized chicken. Salmonella growth, characterized by both Nmax and r, was highest in sterilized chicken, followed by chicken with the low NM level. Our growth model successfully described and analyzed the growth of Salmonella and total bacteria in chicken at constant temperatures; using the data obtained, the model also successfully predicted the growth of Salmonella and total bacteria in chicken stored at dynamic temperatures. Our study clarified the effects that different doses of NM in ground chicken had on the growth kinetics of the Salmonella strain and demonstrated the usability of the growth model for foods with NM.

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