Diffusion limited oxygen precipitation in silicon: Precipitate growth kinetics and phase formation

1995 ◽  
Vol 78 (6) ◽  
pp. 4297-4299 ◽  
Author(s):  
Jan Vanhellemont
Keyword(s):  
Phase Formation ◽  
Growth Kinetics ◽  
Oxygen Precipitation ◽  
Diffusion Limited ◽  
Precipitate Growth ◽  
Limited Oxygen

Precipitation of Oxygen and Mechanism of Stacking Fault Formation in Czochralski Silicon Bulk Crystals

1982 ◽  
Vol 14 ◽  
Author(s):  
Kazumi Wada ◽  
Naohisa Inoue ◽  
Jiro Osaka
Keyword(s):  
Growth Model ◽  
Growth Kinetics ◽  
Stacking Faults ◽  
Diffusional Growth ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Diffusion Limited ◽  
Silicon Bulk ◽  
Precipitate Growth ◽  
Kinetics Of

ABSTRACTThis paper describes recent progress on nucleation and growth of oxide precipitates and stacking faults in Czochralski silicon. Conclusions on the growth kinetics of oxide precipitates are drawn from the experiments and analysis of growth kinetics of two-dimensional precipitates: The experimentally obtained growth kinetics, three-quarter power law is theoretically derived and the precipitate growth is demonstrated to be diffusion-limited by oxygen interstitials. The formation mechanism of stacking faults is the Bardeen-Herring mechanism. Based on diffusional growth model, the growth kinetics of stacking faults are analyzed, assuming a coexistence of self-interstitial supersaturation and vacancy undersaturation. It is found that the growth is driven by vacancies in undersaturation. Vacancy component of self-diffusion has been determined and found to be predominant at low temperature. The possibility of growth model proposed for increase of oxide precipitate density during annealing has been excluded. Both processes, homogeneous and heterogeneous nucleation, have been taking place during annealing.

Analysis of the mechanism of diffusion limited oxygen precipitation in Cz-silicon

1996 ◽  
Vol 166 (1-4) ◽  
pp. 183-188
Author(s):  
F. Stǎnculescu ◽  
M. Moldoveanu ◽  
M. Botea
Keyword(s):  
Oxygen Precipitation ◽  
Diffusion Limited ◽  
Limited Oxygen

Phase Formation and Kinetic Processes in Silicide Growth.

1983 ◽  
Vol 25 ◽  
Author(s):  
G. Ottaviani
Keyword(s):  
Boundary Conditions ◽  
Phase Formation ◽  
Growth Kinetics ◽  
Metal Layer ◽  
Silicide Phase ◽  
Reaction Products ◽  
Silicon Structures ◽  
Silicide Growth ◽  
Kinetic Processes ◽  
Kinetics Of

ABSTRACTTwenty years of research have now been devoted to investigating reaction products obtained by annealing metal-layer/silicon structures. A wide variety of cases have been analyzsed and a considerable amount of data has been produced. Despite the vast amount of information available, several aspects concerning phase formation and kinetic processes are not yet well established. The purpose of this paper is to investigate the mechanisms of phase formation and to show the importance of kinetic factors in the appearance of various compounds. Results will be shown for a single metal layer deposited on silicon, for bilayers. and for alloys. Depending upon the starting structure, metal-rich or silicon-rich silicides can be formed. Moreover, by modifying the boundary conditions, it is possible to change the growth kinetics of the silicide phase that forms.

Phase formation, growth kinetics and optical properties of 0.5ZnO-0.5CdO thin films synthesized by sol-gel spin coating processes

2016 ◽  
Vol 42 (15) ◽  
pp. 17843-17852 ◽  
Author(s):  
Bo Huang ◽  
Hsueh-Liang Chu ◽  
Moo-Chin Wang ◽  
Chao Liu ◽  
Weng-Sing Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Phase Formation ◽  
Growth Kinetics ◽  
Spin Coating ◽  
Sol Gel

Oxygen Precipitation in Nitrogen Doped CZ Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 17-24 ◽  
Author(s):  
G. Kissinger ◽  
Timo Müller ◽  
Andreas Sattler ◽  
W. Häckl ◽  
M. Weber ◽  
...  
Keyword(s):  
Surface Segregation ◽  
Silicon Wafers ◽  
Nitrogen Doped ◽  
Large Precipitate ◽  
Oxygen Precipitation ◽  
Residual Oxygen ◽  
Precipitate Growth ◽  
Precipitate Nucleation ◽  
Combined Technique ◽  
Simultaneous Doping

Nitrogen doping of CZ silicon results in an early formation of large precipitate nuclei during crystal cooling, which are stable at 900°C. These are prone to develop stacking faults and high densities of defects inside defect denuded zones of CZ silicon wafers. Simultaneous doping of FZ silicon with nitrogen and oxygen results in two main stages of precipitate nucleation during crystal cooling, an enhanced nucleation around 800°C, which is nitrogen induced, and a second enhancement around 600°C, which depends on the concentration of residual oxygen on interstitial sites. A combined technique of ramping with 1K/min from 500-1000°C with a final anneal at 1000°C for 2h and lateral BMD measurement by SIRM provides a possibility to delineate v/G on nitrogen-doped silicon wafers. Surface segregation of nitrogen and oxygen during out-diffusion can explain the enhanced BMD formation in about 105m depth and the suppressed BMD formation in about 405m depth below the surface. The precipitate growth is enhanced in regions where nitrogen is filled up again after a preceding out-diffusion.

A Model That Describes the Role of Oxygen, Carbon, and Silicon Interstitials in Silicon Wafers During Device Processing

1984 ◽  
Vol 36 ◽  
Author(s):  
R. A. Hartzell ◽  
H. F. Schaake ◽  
R. G. Massey
Keyword(s):  
Differential Equation ◽  
Partial Differential Equation ◽  
Nucleation And Growth ◽  
Silicon Wafers ◽  
Partial Differential ◽  
Oxygen Precipitation ◽  
Device Processing ◽  
Precipitate Growth ◽  
Oxygen Precipitates

ABSTRACTA model has been developed that simulates oxygen precipitation in silicon wafers during high temperature device processing. The approach used to calculate the nucleation and growth of oxygen precipitates is radically different from other approaches presented in the literature. A discrete rate equation representation of nucleation and growth has been transformed into a continuum representation in the form of a partial differential equation. This partial differential equation describing both the statistical clustering of oxygen during nucleation and the diffusion driven transport during precipitate growth is solved continuously starting from crystal growth through any arbitrary time-dependent temperature process.

Dopant Redistribution During Pd2Si Formation Using Rapid Therm1al Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
Nadeem S. Alvi ◽  
Dim L. Kwong ◽  
Craig G. Hopkins ◽  
Scott G. Baumane
Keyword(s):  
Growth Rate ◽  
Rapid Thermal Annealing ◽  
Growth Kinetics ◽  
Leading Edge ◽  
Thin Layers ◽  
Limited Growth ◽  
Diffusion Limited ◽  
Profile Changes ◽  
Dopant Redistribution ◽  
Silicon Interface

ABSTRACTRapid thermal annealing (RTA) has been used to form Pd2Si by reacting thin layers of Pd metal on As implanted Si. An enhanced growth rate for the Pd2Si has been measured which does not obey the diffusion limited growth kinetics as reported for the furnace reacted Pd2Si. The growing Pd2Si results in As redistribution which is sufficient to displace the shallow p-n junction as the silicide/silicon interface approaches the junction position. The As implanted profile changes little in the Pd2Si region, with As accumulating at the leading edge of the silicide/silicon interface.

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