High Quality GaAs on Si and its Application to a Solar Cell

1988 ◽  
Vol 144 ◽  
Author(s):  
Yoshiro Ohmachi ◽  
Yoshiaki Kadota ◽  
Yoshio Watanabe ◽  
Hiroshi Okamoto
Keyword(s):  
Solar Cell ◽  
Critical Thickness ◽  
High Quality ◽  
Strained Layer ◽  
Cyclic Annealing ◽  
Si Substrates ◽  
Gaas On Si ◽  
Strained Layer Superlattice ◽  
Buffer Structure

ABSTRACTEpitaxial growth using thermal annealing and a strained layer superlattice is studied to obtain high-quality GaAs device layers on Si substrates. Crystalline quality of GaAs-on-Si is found to improve with thermal cyclic annealing at temperatures higher than the growth temperature and cooling down to 300°C. It is also found that the optimum InGaAs/GaAs strained layer superlattice buffer structure is one whose total thickness is several times the calculated critical thickness for the average In-mole fraction of the SLS buffer. Configurations and structures of dislocation reductions are ex-amined by TEM observations. A GaAs solar cell is successfully constructed and is found to show total area efficiencies of 18.3% under AM 0 and 20.0% under AM 1.5 conditions.

scholarly journals Methods to Decrease Defect Density in GaAs/Si Heteroepitaxy

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber
Keyword(s):  
Thermal Cycling ◽  
Defect Density ◽  
Structural Quality ◽  
High Quality ◽  
Strained Layer ◽  
Patterned Growth ◽  
Si Substrates ◽  
Strained Layer Superlattices

ABSTRACTIn this paper, the fundamental mechanisms of procedures improving the structural quality of GaAs grown on Si are discussed. Patterned growth, strained layer superlattices and proper thermal cycling are promising approaches to achieve a high quality of GaAs layers grown on Si substrates.

Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si

1990 ◽  
Vol 29 (Part 1, No. 11) ◽  
pp. 2371-2375 ◽  
Author(s):  
Norio Hayafuji ◽  
Motoharu Miyashita ◽  
Takashi Nishimura ◽  
Kaoru Kadoiwa ◽  
Hisao Kumabe ◽  
...  
Keyword(s):  
Defect Reduction ◽  
Strained Layer ◽  
Cyclic Annealing ◽  
Gaas On Si ◽  
Strained Layer Superlattice

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

Numerical Study on the CZ Silicon Melt Convection for High Efficient Solar Cell

Solar Energy ◽  
2003 ◽  
Author(s):  
Tetsuo Munakata ◽  
Satoshi Someya
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
High Frequency ◽  
High Quality ◽  
High Efficient ◽  
Silicon Melt ◽  
Frequency Magnetic Field ◽  
High Frequency Magnetic Field ◽  
Melt Convection

Conversion efficiency of solar cell is strongly affected by quality of substrate and the quality of substrate is influenced by melt convection if the substrate crystal is grown by melt growth technique. Therefore, melt convection control techniques are important to produce a high quality single crystal. In this paper, we have proposed a high frequency magnetic field applied CZ method and investigated the effect of high frequency magnetic field on silicon melt convection. The result reveals that the high frequency magnetic fields affect the tendency of the melt convection: until certain intensity of the high frequency magnetic field, the melt convection is suppressed and above such intensity of the high frequency magnetic field, the melt convection intensity is enhanced. This result indicates that the melt convection can be controlled by the high frequency magnetic field and the high quality silicon single crystals will be grown by this method.

Structural properties of GaAs-on-Si with InGaAs/GaAs strained-layer superlattice

1988 ◽  
Vol 93 (1-4) ◽  
pp. 459-465 ◽  
Author(s):  
Yoshio Watanabe ◽  
Yoshiaki Kadota ◽  
Hiroshi Okamoto ◽  
Masahiro Seki ◽  
Yoshiro Ohmachi
Keyword(s):  
Structural Properties ◽  
Strained Layer ◽  
Gaas On Si ◽  
Strained Layer Superlattice

Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication

2000 ◽  
Vol 87 (5) ◽  
pp. 2285-2288 ◽  
Author(s):  
T. Soga ◽  
T. Jimbo ◽  
G. Wang ◽  
K. Ohtsuka ◽  
M. Umeno
Keyword(s):  
Solar Cell ◽  
Hydrogen Plasma ◽  
Si Substrates ◽  
Gaas On Si ◽  
Solar Cell Fabrication ◽  
Plasma Passivation ◽  
Cell Fabrication

Materials Aspects of GaAs on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
Russ Fischer
Keyword(s):  
Dislocation Density ◽  
Lattice Mismatch ◽  
Strained Layer ◽  
Gaas On Si ◽  
Intermediate Layers ◽  
Device Applications ◽  
Strained Layer Superlattices

SUMMARY ABSTRACTDespite the 4.2% lattice mismatch, several laboratories have demonstrated that the quality of GaAs grown on Si is high enough for practical device applications [1–5]. At the GaAs/Si interface, a dislocation density of roughly 1012cm−2 is required to accommodate the mismatch. Therefore various techniques of dislocation filtering are necessary to provide material with acceptable dislocation counts. Among these techniques are the use of tilted substrates, strained layer superlattices, and intermediate layers.

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