Materials Aspects of GaAs on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
Russ Fischer
Keyword(s):  
Dislocation Density ◽  
Lattice Mismatch ◽  
Strained Layer ◽  
Gaas On Si ◽  
Intermediate Layers ◽  
Device Applications ◽  
Strained Layer Superlattices

SUMMARY ABSTRACTDespite the 4.2% lattice mismatch, several laboratories have demonstrated that the quality of GaAs grown on Si is high enough for practical device applications [1–5]. At the GaAs/Si interface, a dislocation density of roughly 1012cm−2 is required to accommodate the mismatch. Therefore various techniques of dislocation filtering are necessary to provide material with acceptable dislocation counts. Among these techniques are the use of tilted substrates, strained layer superlattices, and intermediate layers.

Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices

1987 ◽  
Vol 26 (Part 2, No. 12) ◽  
pp. L1950-L1952 ◽  
Author(s):  
Hiroshi Okamoto ◽  
Yoshio Watanabe ◽  
Yoshiaki Kadota ◽  
Yoshiro Ohmachi
Keyword(s):  
Thermal Cycles ◽  
Strained Layer ◽  
Gaas On Si ◽  
Dislocation Reduction ◽  
Strained Layer Superlattices

High Quality GaAs on Si and its Application to a Solar Cell

1988 ◽  
Vol 144 ◽  
Author(s):  
Yoshiro Ohmachi ◽  
Yoshiaki Kadota ◽  
Yoshio Watanabe ◽  
Hiroshi Okamoto
Keyword(s):  
Solar Cell ◽  
Critical Thickness ◽  
High Quality ◽  
Strained Layer ◽  
Cyclic Annealing ◽  
Si Substrates ◽  
Gaas On Si ◽  
Strained Layer Superlattice ◽  
Buffer Structure

ABSTRACTEpitaxial growth using thermal annealing and a strained layer superlattice is studied to obtain high-quality GaAs device layers on Si substrates. Crystalline quality of GaAs-on-Si is found to improve with thermal cyclic annealing at temperatures higher than the growth temperature and cooling down to 300°C. It is also found that the optimum InGaAs/GaAs strained layer superlattice buffer structure is one whose total thickness is several times the calculated critical thickness for the average In-mole fraction of the SLS buffer. Configurations and structures of dislocation reductions are ex-amined by TEM observations. A GaAs solar cell is successfully constructed and is found to show total area efficiencies of 18.3% under AM 0 and 20.0% under AM 1.5 conditions.

An Evaluation of Implantation-Disordering of (Inga)As/Gaas Strained-Layer Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
D. R. Myers ◽  
C. E. Barnes ◽  
G. W. Arnold ◽  
L. R. Dawson ◽  
R. M. Biefeld ◽  
...  
Keyword(s):  
Transport Properties ◽  
Lattice Mismatch ◽  
Electrical Activation ◽  
Chemical System ◽  
Virgin Material ◽  
Bulk Gaas ◽  
Strained Layer ◽  
Electroluminescence Intensity ◽  
Strained Layer Superlattices ◽  
Lattice Matched

AbstractWe have examined the optical and transport properties of In.2Ga.8As/GaAs straled-kayer superlZotices (SLS's), which have been implanted either with 5 × 1015/cm2, 250keV Zn+ or with 5 × 1014/cm2, 70keV Be+ and annealed under an arsenic overpressure at 600 °C. For both cases, electrical activation in the implantation-doped regions equalled that of similar implants and anneals in bulk GaAs, even though the Be implant retained the SLS structure, while the Zn implant intermixed the SLS layers to produce an alloy semiconductor of the average SLS composition. Photoluminescence intensities in the annealed implanted regions were significantly reduced from that of virgin material, apparently due to residual implant damage. Diodes formed from both the Be- and the Zn-implanted SLS's produced electroluminescence intensity comparable to that of grown-junction SLS diodes in the same chemical system, despite the implantation processing and the potential for vertical lattice mismatch in the Zn-disordered SLS device. These results indicate that Zn-disordering can be as useful in strained-layer superlattices as in lattice-matched systems.

Structure of Highly Perfect Semiconductor Strained-Layer Superlattices: High-Resolution X-Ray Diffraction and Computer Simulation Studies

1989 ◽  
Vol 145 ◽  
Author(s):  
J. M. Vandenberg
Keyword(s):  
High Resolution ◽  
Periodic Structures ◽  
X Ray Diffraction ◽  
Ray Method ◽  
X Ray ◽  
Strained Layer ◽  
Step Model ◽  
Computer Simulation Studies ◽  
Strained Layer Superlattices

AbstractHigh-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices (SLS's) have been carried out using a four-crystal monochromator. A wide asymmetric range of sharp higher-order x-ray satellite peaks is observed indicating well-defined periodic structures. Using a kinematical diffraction step model very good agreement between measured and simulated x-ray satellite patterns could be achieved. These results show that this x-ray method is a powerful tool to evaluate the crystal quality of SLS's.

scholarly journals Methods to Decrease Defect Density in GaAs/Si Heteroepitaxy

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber
Keyword(s):  
Thermal Cycling ◽  
Defect Density ◽  
Structural Quality ◽  
High Quality ◽  
Strained Layer ◽  
Patterned Growth ◽  
Si Substrates ◽  
Strained Layer Superlattices

ABSTRACTIn this paper, the fundamental mechanisms of procedures improving the structural quality of GaAs grown on Si are discussed. Patterned growth, strained layer superlattices and proper thermal cycling are promising approaches to achieve a high quality of GaAs layers grown on Si substrates.

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