Performance and Reliability of Ultrathin Oxynitride Gate Dielectrics Prepared using In-Situ Multiple Rapid Thermal Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
G. Q. Lo ◽  
D. K. Shih ◽  
W. Ting ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Conduction Mechanism ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Charge Trapping ◽  
Processing Parameters ◽  
Time Dependent ◽  
Electrical Characteristics ◽  
Interface Hardness

ABSTRACTThe electrical characteristics of ultrathin oxynitride gate dielectrics prepared by in-situ multiple rapid thermal processing in reactive ambients (O2 and NH3) have been studied. Specifically, the conduction mechanism, charge trapping properties, time-dependent breakdown, and interface hardness in oxynitride films have been characterized as a function of both RTO and RTN processing parameters. In addition, N-channel MOSFET's have been fabricated using oxynitrides as gate dielectrics and their hot carier immunity has been examined and compared with devices with pure thermal oxides. Devices with superior electrical characteristics and reliability have been produced by optimizing RTO/RTN parameters.

High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

1993 ◽  
Vol 303 ◽  
Author(s):  
G. W. Yoon ◽  
A. B. Joshi ◽  
J. Kim ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Dielectric Breakdown ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Time Dependent ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Stress Induced Leakage Current ◽  
As Stress

ABSTRACTIn this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

Ultra Thin High Quality Ta2O5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing

1999 ◽  
Vol 567 ◽  
Author(s):  
H. F. Luan ◽  
S. J. Lee ◽  
C. H. Lee ◽  
A. Y. Mao ◽  
R. Vrtis ◽  
...  
Keyword(s):  
Leakage Current ◽  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Interface Properties ◽  
High Quality

ABSTRACTIn this paper, ultra thin CVD Ta2O5 stacked gate dielectrics (Teq∼14Å-22Å) was fabricated by in-situ RTP processing. The leakage current of Ta2O5 devices is 103× lower leakage current compared to SiO2 of identical thickness for devices with Teq between 18Å-22Å. While Teq<18Å, the leakage current follows same train and J∼10−3A/cm2 for Ta2O5 stacked gate dielectrics with Teq=14Å. Superior interface properties and reliability have been obtained.

Material and Electrical Properties of Gate Dielectrics Grown by Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
J. Nulman ◽  
J. P. Krusius ◽  
P. Renteln
Keyword(s):  
Silicon Dioxide ◽  
Thermal Processing ◽  
Material Characterization ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Pure Oxygen ◽  
Dielectric Films ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTThe material and electrical characteristics of silicon dielectric films prepared via Rapid Thermal Processing (RTP) are described. A commercial RTP system with heat provided by tungsten-halogen lamps was used. Silicon dioxide films were grown in pure oxygen and in oxygen with 4% hydrogen chloride ambients. As grown films were either annealed in a nitrogen ambient or nitrided in an ammonia ambient. Film thickness ranges from 4 to 70 nm for RTP times from 0 to 300 s at 1150 C. Current-voltage and capacitance-voltage methods were used for electrical characteristics. Ellipsometry, Auger and TEM were used for material characterization.

Charge trapping properties in thin oxynitride gate dielectrics prepared by rapid thermal processing

1990 ◽  
Vol 56 (10) ◽  
pp. 979-981 ◽  
Author(s):  
G. Q. Lo ◽  
W. C. Ting ◽  
D. K. Shih ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Charge Trapping
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