High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

1993 ◽  
Vol 303 ◽  
Author(s):  
G. W. Yoon ◽  
A. B. Joshi ◽  
J. Kim ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Dielectric Breakdown ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Time Dependent ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Stress Induced Leakage Current ◽  
As Stress

ABSTRACTIn this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

2016 ◽  
Vol 858 ◽  
pp. 615-618 ◽  
Author(s):  
Zakariae Chbili ◽  
Kin P. Cheung ◽  
Jason P. Campbell ◽  
Jaafar Chbili ◽  
Mhamed Lahbabi ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Oxide Thickness ◽  
Time Dependent ◽  
Production Environment ◽  
Early Failure ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

In this paper we report TDDB results on SiO2/SiC MOS capacitors fabricated in a matured production environment. A key feature is the absence of early failure out of over 600 capacitors tested. The observed field accelerations and activation energies are higher than what is reported on SiO2/Si of similar oxide thickness. The great improvement in oxide reliability and the deviation from typical SiO2/SiC observations are explained by the quality of the oxide in this study.

Time-Dependent Dielectric Breakdown of 4H-SiC/$ \hbox{SiO}_{2}$ MOS Capacitors

2008 ◽  
Vol 8 (4) ◽  
pp. 635-641 ◽  
Author(s):  
Moshe Gurfinkel ◽  
Justin C. Horst ◽  
John S. Suehle ◽  
Joseph B. Bernstein ◽  
Yoram Shapira ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Time Dependent ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown

Ultra Thin High Quality Ta2O5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing

1999 ◽  
Vol 567 ◽  
Author(s):  
H. F. Luan ◽  
S. J. Lee ◽  
C. H. Lee ◽  
A. Y. Mao ◽  
R. Vrtis ◽  
...  
Keyword(s):  
Leakage Current ◽  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Interface Properties ◽  
High Quality

ABSTRACTIn this paper, ultra thin CVD Ta2O5 stacked gate dielectrics (Teq∼14Å-22Å) was fabricated by in-situ RTP processing. The leakage current of Ta2O5 devices is 103× lower leakage current compared to SiO2 of identical thickness for devices with Teq between 18Å-22Å. While Teq<18Å, the leakage current follows same train and J∼10−3A/cm2 for Ta2O5 stacked gate dielectrics with Teq=14Å. Superior interface properties and reliability have been obtained.

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