Initial Stages in the Growth of Oxide Thin Films by CVD

AbstractA technique has been developed for studying the early stages of heteroepitactic nucleation and growth of oxide thin films by TEM using direct deposition onto electron-transparent ceramic substrates. Observations of α-Fe2O3 island growth on four orientations of α-Al2O3 – (0001), {1102}, {1010}, and {1120} – are reported. Moir6 fringes and selected-area diffraction are used to show heteroepitactic growth. Island morphology is compared to known growth habits of hematite crystals. Preferential nucleation of islands at low-energy sites (e.g. surface steps) is also demonstrated.

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Low-energy femtosecond pulsed laser deposition of cerium (IV) oxide thin films on silicon substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2021.126323 ◽

2021 ◽

pp. 126323

Author(s):

Joseph A. De Mesa ◽

Angelo P. Rillera ◽

Melvin John F. Empizo ◽

Nobuhiko Sarukura ◽

Roland V. Sarmago ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Low Energy ◽

Laser Deposition ◽

Silicon Substrates ◽

Oxide Thin Films ◽

Femtosecond Pulsed Laser

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In situreal-time investigation of kinetics of nucleation and growth of sol-gel-derived functional oxide thin films

Physical Review B ◽

10.1103/physrevb.77.205414 ◽

2008 ◽

Vol 77 (20) ◽

Cited By ~ 14

Author(s):

Tao Sun ◽

Hao Hu ◽

Zixiao Pan ◽

Xuefa Li ◽

Jin Wang ◽

...

Keyword(s):

Thin Films ◽

Sol Gel ◽

Nucleation And Growth ◽

Oxide Thin Films ◽

Kinetics Of

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Characterization of transparent conducting oxide thin films deposited on ceramic substrates

Materials Letters ◽

10.1016/j.matlet.2011.08.066 ◽

2012 ◽

Vol 66 (1) ◽

pp. 233-235 ◽

Cited By ~ 13

Author(s):

Ramesh M. Krishna ◽

Timothy C. Hayes ◽

Daniel Krementz ◽

George Weeks ◽

Adrián Méndez Torres ◽

...

Keyword(s):

Thin Films ◽

Transparent Conducting Oxide ◽

Oxide Thin Films ◽

Ceramic Substrates ◽

Transparent Conducting

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Controllable low energy ion assistance as a tool for tailoring properties of gold oxide and gold–silver oxide thin films

Thin Solid Films ◽

10.1016/j.tsf.2010.12.162 ◽

2011 ◽

Vol 519 (11) ◽

pp. 3448-3456

Author(s):

Radost Pascova ◽

Jordan Kourtev

Keyword(s):

Thin Films ◽

Silver Oxide ◽

Low Energy ◽

Oxide Thin Films ◽

Gold Oxide ◽

Gold Silver ◽

Ion Assistance

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Nucleation and growth control in pulsed laser epitaxy of oxide thin films

10.1117/12.335892 ◽

1998 ◽

Cited By ~ 5

Author(s):

Hideomi Koinuma ◽

Masashi Kawasaki ◽

Satoru Ohashi ◽

Mikk Lippmaa ◽

Naoyuki Nakagawa ◽

...

Keyword(s):

Thin Films ◽

Growth Control ◽

Pulsed Laser ◽

Nucleation And Growth ◽

Oxide Thin Films

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Characterization of nanostructured zinc oxide thin films synthesized at room temperature using low energy plasma focus device

Ceramics International ◽

10.1016/j.ceramint.2015.08.051 ◽

2015 ◽

Vol 41 (10) ◽

pp. 15024-15033 ◽

Cited By ~ 4

Author(s):

Mohammad Taghi Hosseinnejad ◽

Marzieh Shirazi ◽

Mahmood Ghoranneviss ◽

Mohammad Reza Hantehzadeh ◽

Elham Darabi

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Plasma Focus ◽

Room Temperature ◽

Low Energy ◽

Plasma Focus Device ◽

Oxide Thin Films ◽

Nanostructured Zinc Oxide

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Molecular beam epitaxy of oxide thin films using mass-separated low-energy O+ beams

Laser and Ion Beam Modification of Materials ◽

10.1016/b978-0-444-81994-9.50126-3 ◽

1994 ◽

pp. 601-604

Author(s):

Ryusuke Kita ◽

Kenichi Kawaguchi ◽

Takashi Hase ◽

Takeshi Koga ◽

Rittaporn Itti ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Low Energy ◽

Oxide Thin Films

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CRYSTAL GROWTH OF OXIDE THIN FILMS USING MASS-SEPARATED LOW-ENERGY O+ ION BEAMS

International Journal of Modern Physics B ◽

10.1142/s0217979294000087 ◽

1994 ◽

Vol 08 (01n02) ◽

pp. 183-205 ◽

Cited By ~ 1

Author(s):

RYUSUKE KITA

Keyword(s):

Thin Films ◽

Low Temperatures ◽

Oxygen Plasma ◽

Molecular Beam ◽

Ion Beams ◽

Low Energy ◽

Oxide Thin Films ◽

High Quality ◽

Mbe Growth ◽

A New Technique

A new technique developed for growing high-quality oxide thin films by molecular beam epitaxy (MBE) is described. The technique uses low-energy and high density O + ion beams mass-separated from an oxygen plasma, as an oxidation source. Since O + ion beams have great oxidation ability and kinetic energy, the technique enables us to grow oxide films by MBE not only under ultrahigh vacuum comparable to the environment where semiconductors are prepared, but also at low temperatures. The application of the technique to the MBE growth of CuO, BaO, SrO and Sr–Cu–O thin films is also described.

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