Molecular beam epitaxy of oxide thin films using mass-separated low-energy O+ beams

1994 ◽  
pp. 601-604
Author(s):  
Ryusuke Kita ◽  
Kenichi Kawaguchi ◽  
Takashi Hase ◽  
Takeshi Koga ◽  
Rittaporn Itti ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Energy ◽  
Oxide Thin Films

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

scholarly journals Growth of Magnesium Oxide Thin Films Using Molecular Beam Epitaxy

2017 ◽  
Vol 13 ◽  
pp. 347-350 ◽  
Author(s):  
S. Ali ◽  
◽  
S. Qaseem ◽  
S. Ali ◽  
M. Naeem
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Magnesium Oxide ◽  
Molecular Beam ◽  
Oxide Thin Films

Enhancement of room-temperature ferromagnetism in manganese oxide thin films grown on Nb:SrTiO3 substrates

2014 ◽  
Vol 28 (20) ◽  
pp. 1450162
Author(s):  
P. Hu ◽  
S. X. Wu ◽  
S. W. Li
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Manganese Oxide ◽  
Growth Process ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Experimental Results ◽  
Oxide Thin Films

In this paper, α- Mn 2 O 3 thin films were fabricated by plasma-assisted molecular beam epitaxy on SrTiO 3 and Nb : SrTiO 3, respectively. The grown samples showed room temperature ferromagnetism (RFM) properties. All the experimental results manifested that the RFM properties in undoped thin films were induced by oxygen vacancies formed during the growth process. Even more, the ferromagnetism of thin films grown on Nb : SrTiO 3 were enhanced, and these results confirmed the fact that oxygen vacancies induced ferromagnetism. That is to say, more oxygen vacancies result the more unpaired electrons induced prominent abnormal spin causing ferromagnetism.

CRYSTAL GROWTH OF OXIDE THIN FILMS USING MASS-SEPARATED LOW-ENERGY O+ ION BEAMS

1994 ◽  
Vol 08 (01n02) ◽  
pp. 183-205 ◽  
Author(s):  
RYUSUKE KITA
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Oxide Thin Films ◽  
High Quality ◽  
Mbe Growth ◽  
A New Technique

A new technique developed for growing high-quality oxide thin films by molecular beam epitaxy (MBE) is described. The technique uses low-energy and high density O + ion beams mass-separated from an oxygen plasma, as an oxidation source. Since O + ion beams have great oxidation ability and kinetic energy, the technique enables us to grow oxide films by MBE not only under ultrahigh vacuum comparable to the environment where semiconductors are prepared, but also at low temperatures. The application of the technique to the MBE growth of CuO, BaO, SrO and Sr–Cu–O thin films is also described.

Electrical and Optical Properties of Zinc Oxide Thin Films and Heavily Aluminum-doped Zinc Oxide Thin Films Prepared by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Yuji Kawamura ◽  
Naoki Ohashi ◽  
Hirofumi Kakemoto ◽  
Satoshi Wada ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge Emission ◽  
Oxide Thin Films ◽  
Good Crystallinity ◽  
Aluminum Doped Zinc Oxide ◽  
High Carrier

ABSTRACTZnO (ZO) and Aluminum (Al) doped ZnO (AZO) films were grown on sapphire substrate via oxygen radical assisted molecular beam epitaxy (MBE) technique. The results of XRD measurement and temperature dependent Hall measurement confirmed that the AZO films were typically highly degenerate semiconductor with good crystallinity. The resistivity of these films were closed to the theoretical lower limit. The optical properties of these films were investigated by photoluminescence (PL) spectra and absorption spectra. Strong band-edge emission was observed in the AZO films with good crystallinity in spite of high carrier concentration more than 1020 cm-3. A sift of absorption edge to higher energy side and a gradual increase of the absorption was observed for the AZO film.

Growth of zinc oxide thin films on Si (400) by plasma-assisted molecular beam epitaxy

2002 ◽  
Author(s):  
Hongwei Liang ◽  
Youming Lu ◽  
De Z. Shen ◽  
Yichun Liu ◽  
B. H. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oxide Thin Films
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