CRYSTAL GROWTH OF OXIDE THIN FILMS USING MASS-SEPARATED LOW-ENERGY O+ ION BEAMS

1994 ◽  
Vol 08 (01n02) ◽  
pp. 183-205 ◽  
Author(s):  
RYUSUKE KITA
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Oxide Thin Films ◽  
High Quality ◽  
Mbe Growth ◽  
A New Technique

A new technique developed for growing high-quality oxide thin films by molecular beam epitaxy (MBE) is described. The technique uses low-energy and high density O + ion beams mass-separated from an oxygen plasma, as an oxidation source. Since O + ion beams have great oxidation ability and kinetic energy, the technique enables us to grow oxide films by MBE not only under ultrahigh vacuum comparable to the environment where semiconductors are prepared, but also at low temperatures. The application of the technique to the MBE growth of CuO, BaO, SrO and Sr–Cu–O thin films is also described.

Molecular beam epitaxy of oxide thin films using mass-separated low-energy O+ beams

1994 ◽  
pp. 601-604
Author(s):  
Ryusuke Kita ◽  
Kenichi Kawaguchi ◽  
Takashi Hase ◽  
Takeshi Koga ◽  
Rittaporn Itti ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Energy ◽  
Oxide Thin Films

Stoichiometry Related Phenomena in Low Temperature Grown GaAs

1993 ◽  
Vol 325 ◽  
Author(s):  
M. Missous ◽  
S. O'Hagan
Keyword(s):  
Low Temperatures ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Time Data ◽  
High Quality ◽  
Mbe Growth ◽  
New Phenomena ◽  
First Time ◽  
Low Temperature Grown Gaas ◽  
Lt Gaas

AbstractThe growth of GaAs at low temperatures (LT-GaAs) at or below 250 °C, under standard Molecular Beam Epitaxy (MBE) growth conditions, usually results in a massive incorporation of excess As in the lattice which then totally dominates the electrical and optical characteristics of the as grown material. We report on new phenomena associated with the growth of GaAs at 250 °C and we show, for the first time, data on highly electrically active doped material. By careful control of the growth conditions, namely As4/Ga flux ratios, material in which total defect concentrations of less than 1017 cm-3, well below the huge 1020 cm-3 that is normally obtained in LT-GaAs, can be achieved thereby demonstrating that high quality GaAs can in effect be grown at extremely low temperatures.

Microstructural and optical properties of high-quality Mg–Zn oxide thin films

2021 ◽  
Vol 127 ◽  
pp. 105690
Author(s):  
A. Sáenz-Trevizo ◽  
D. Kuchle-Mena ◽  
P. Pizá-Ruiz ◽  
P. Amézaga-Madrid ◽  
O. Solís-Canto ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxide Thin Films ◽  
High Quality

Low-energy femtosecond pulsed laser deposition of cerium (IV) oxide thin films on silicon substrates

2021 ◽  
pp. 126323
Author(s):  
Joseph A. De Mesa ◽  
Angelo P. Rillera ◽  
Melvin John F. Empizo ◽  
Nobuhiko Sarukura ◽  
Roland V. Sarmago ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Low Energy ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Oxide Thin Films ◽  
Femtosecond Pulsed Laser

Sol-gel-hydrothermal growth of oxide thin films at low temperatures

2000 ◽  
Vol 80 (2) ◽  
pp. 119-124
Author(s):  
Jianming Zeng ◽  
Chenglu Lin ◽  
Zhitang Song ◽  
Kun Li ◽  
Jinhua Li
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Sol Gel ◽  
Hydrothermal Growth ◽  
Oxide Thin Films

High quality epitaxial Mn2Au (001) thin films grown by molecular beam epitaxy

2020 ◽  
Vol 127 (24) ◽  
pp. 243901 ◽  
Author(s):  
S. P. Bommanaboyena ◽  
T. Bergfeldt ◽  
R. Heller ◽  
M. Kläui ◽  
M. Jourdan
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality

Novel Mocvd Processes for Nanoscale Oxide Thin Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Tingkai Li ◽  
Pete Zawadzkp ◽  
Richard A. Stall ◽  
Yongfei Zhu ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Integrated Circuits ◽  
Deposition Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Properties ◽  
Oxide Thin Films ◽  
High Quality ◽  
Step Process ◽  
High Dielectric

AbstractNanoscale oxide thin films such as Ba1‐xSrxTiO3 (BST), SrBi2Ta2O9 (SBT), and PbZr1‐xTixO3 (PZT) that have a high dielectric constant and excellent ferroelectric properties have been receiving greatly increased attention, especially for high density memories in next generation integrated circuits. However, with increasing deposition temperature the surface roughness of the films increases, which results in high leakage current, and when the thickness of oxide films is decreased, the apparent bulk‐like properties of thin films tend to worsen due to the increased influence of the interface. To solve these problems, novel MOCVD techniques, plasma enhanced deposition, and a two step process, were developed for high quality oxide thin films.

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