Effects of Two-Step Annealing on the Epitaxialgrowth of CoSi2 on Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
L. J. Chen ◽  
T. T. Chang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Epitaxial Growth ◽  
High Temperature Annealing ◽  
Transmission Electron ◽  
Cobalt Thin Films

The formation of epitaxial CoSi2 on silicon by both conventional and two-step annealing of cobalt thin films on silicon was studied by transmission electron microscopy.For two-step annealing, samples were first annealed at 350°C for 1 h, followed by high temperature annealing at 650–950°C for 1 h. The scheme was found to bevery effective in promoting the epitaxial growth of CoSi2 on silicon as well aseliminating faceted structures on Si(111). The results are discussed in terms of the driving away of impurities from the interfaces.

Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Boundary Motion ◽  
High Temperature Annealing ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts

2013 ◽  
Vol 740-742 ◽  
pp. 485-489 ◽  
Author(s):  
Wei Huang ◽  
Shao Hui Chang ◽  
Xue Chao Liu ◽  
Zheng Zheng Li ◽  
Tian Yu Zhou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Oxide Layer ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
High Temperature Annealing ◽  
Contact Interface ◽  
Ohmic Behavior ◽  
Transmission Electron

The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was observed in the as-deposited contact interface. The native oxide layer cannot be removed at 650°C through rapid thermal annealing (RTA) and it was completely removed at 1000°C RTA. The residue of native oxide layer resulted in the Schottky characters. High temperature annealing (>950°C) not only removes the oxide layer in the near-SiC-interface, but also forms a well arranged flat Ni2Si/SiC interface, which contribute to the formation of ohmic behavior.

Structure and Strength of Rapidly Quenched Cu-Al2O3 Composites

1998 ◽  
Vol 555 ◽  
Author(s):  
A. I. Il'Insky ◽  
A. S. Terletsky ◽  
E. W. Zozulya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Strain Hardening ◽  
Vapor Condensation ◽  
High Temperature Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Three Stages ◽  
High Level

AbstractMicrostructure of dispersion hardened composites (DC) Cu-Al2O3 prepared by simultaneous vacuum vapor condensation of Cu and A12O3 was studied by X-ray diffractometry and transmission electron microscopy methods. After high temperature annealing at 900°C for 2 hours the composites retain the submicrocrystalline structure and high level of strength -0.9 GPa. It has been found that strain hardening of vacuum deposited Cu-A12O3 composites takes place in three stages that is not typical for well-known composites of metallurgical origin.

scholarly journals Infrared and Raman Spectroscopic Study of Carbon-Cobalt Composites

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
André Tembre ◽  
Jacques Hénocque ◽  
Martial Clin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Infrared Spectroscopy ◽  
Cobalt Content ◽  
Raman Spectroscopic ◽  
Raman Spectroscopic Study ◽  
Transmission Electron ◽  
Cobalt Thin Films

Analysis of carbon-cobalt thin films using infrared spectroscopy has shown existence of carbon-cobalt stretching mode and great porosity. The Raman spectroscopy and high-resolution transmission electron microscopy have been used in order to investigate the microstructure of the films. These films exhibit complex Raman spectra suggesting the presence of amorphous and crystallized phases. The different fractions of phases and the correlation between the atomic bond structures and the Raman features depend on the cobalt content.

Studies on Epitaxial Relationship and Interface Structure of AlN/Si(111) and GaN/Si(111) Heterostructures

2002 ◽  
Vol 743 ◽  
Author(s):  
T. A. Rawdanowicz ◽  
H. Wang ◽  
A. Kvit ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Epitaxial Growth ◽  
Interface Structure ◽  
Zone Axis ◽  
Epitaxial Relationship ◽  
Growth Interface ◽  
Transmission Electron

ABSTRACTWe present the details of epitaxial growth interface structure of single wurtzite AlN thin films on (111) Si substrates by laser-molecular-beam-epitaxy. High quality AlN thin films with atomically sharp interfaces can be obtained by Laser-MBE at a substrate temperature of 650 ±10°C. X-ray diffraction and high resolution transmission electron microscopy was used to study the details of epitaxial growth of AlN on Si(111) substrate. The orientation-relationship of AlN on Si(111) was studied from Si <110> and <112> zone axis and determined to be AlN [2110]|Si[110] and AlN [0110]|Si[211]. The atomic structure of the interface was studied by high-resolution transmission electron microscopy and Fourier filtered image of cross-sectional AlN/Si(111) samples from both Si<110> and <112> zone axis. The results revealed the domain matching epitaxy of 4:5 ratio between the interplanar distances of Si(110) and AlN [2110]. We also present similarities and differences between the growth mechanism of AlN/Si(111) and GaN/Si(111) heterostructures.

Structural properties of Si nanoclusters produced by thermal annealing of SiOx films

2004 ◽  
Vol 817 ◽  
Author(s):  
Simona Boninelli ◽  
Fabio Iacona ◽  
Corrado Bongiorno ◽  
Corrado Spinella ◽  
Francesco Priolo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Quantitative Description ◽  
Dark Field ◽  
High Temperature Annealing ◽  
Transmission Electron

AbstractThe structural properties of Si nanoclusters embedded in SiO2, produced by high temperature annealing of SiOx films, have been investigated by energy filtered transmission electron microscopy. The presence of amorphous nanostructures, not detectable by using dark field transmission electron microscopy, has been demonstrated. By taking into account also this contribution, a quantitative description of the evolution of the samples upon thermal annealing has been accomplished. In particular, the nanocluster mean radius and the density of amorphous and crystalline clusters have been determined as a function of the annealing temperature.

Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
J. L. Hoyt ◽  
E. F. Crabbé ◽  
R. F. W. Pease ◽  
J. F. Gibbons
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
High Temperature Annealing ◽  
Strong Reduction ◽  
Diffusion Front ◽  
Transmission Electron ◽  
Silicon Interface ◽  
New Evidence

ABSTRACTNonuniformities in the polysilicon-to-silicon interface and in the polysilicon structure are expected to produce a nonuniform diffusion front when arsenic is diffused from polysilicon during epitaxial alignment. Using transmission electron microscopy, we find surprisingly uniform arsenic diffusion fronts in the underlying silicon substrate following high temperature annealing. Several explanations of this result are proposed. We also report new evidence of a strong reduction in the time to achieve complete epitaxial transformation of the polysilicon when the polysilicon thickness is reduced. A corresponding reduction in the associated arsenic penetration depth is demonstrated.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

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