Structural properties of Si nanoclusters produced by thermal annealing of SiOx films

2004 ◽  
Vol 817 ◽  
Author(s):  
Simona Boninelli ◽  
Fabio Iacona ◽  
Corrado Bongiorno ◽  
Corrado Spinella ◽  
Francesco Priolo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Quantitative Description ◽  
Dark Field ◽  
High Temperature Annealing ◽  
Transmission Electron

AbstractThe structural properties of Si nanoclusters embedded in SiO2, produced by high temperature annealing of SiOx films, have been investigated by energy filtered transmission electron microscopy. The presence of amorphous nanostructures, not detectable by using dark field transmission electron microscopy, has been demonstrated. By taking into account also this contribution, a quantitative description of the evolution of the samples upon thermal annealing has been accomplished. In particular, the nanocluster mean radius and the density of amorphous and crystalline clusters have been determined as a function of the annealing temperature.

Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Boundary Motion ◽  
High Temperature Annealing ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts

2013 ◽  
Vol 740-742 ◽  
pp. 485-489 ◽  
Author(s):  
Wei Huang ◽  
Shao Hui Chang ◽  
Xue Chao Liu ◽  
Zheng Zheng Li ◽  
Tian Yu Zhou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Oxide Layer ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
High Temperature Annealing ◽  
Contact Interface ◽  
Ohmic Behavior ◽  
Transmission Electron

The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was observed in the as-deposited contact interface. The native oxide layer cannot be removed at 650°C through rapid thermal annealing (RTA) and it was completely removed at 1000°C RTA. The residue of native oxide layer resulted in the Schottky characters. High temperature annealing (>950°C) not only removes the oxide layer in the near-SiC-interface, but also forms a well arranged flat Ni2Si/SiC interface, which contribute to the formation of ohmic behavior.

Structure and Strength of Rapidly Quenched Cu-Al2O3 Composites

1998 ◽  
Vol 555 ◽  
Author(s):  
A. I. Il'Insky ◽  
A. S. Terletsky ◽  
E. W. Zozulya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Strain Hardening ◽  
Vapor Condensation ◽  
High Temperature Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Three Stages ◽  
High Level

AbstractMicrostructure of dispersion hardened composites (DC) Cu-Al2O3 prepared by simultaneous vacuum vapor condensation of Cu and A12O3 was studied by X-ray diffractometry and transmission electron microscopy methods. After high temperature annealing at 900°C for 2 hours the composites retain the submicrocrystalline structure and high level of strength -0.9 GPa. It has been found that strain hardening of vacuum deposited Cu-A12O3 composites takes place in three stages that is not typical for well-known composites of metallurgical origin.

Effects of Two-Step Annealing on the Epitaxialgrowth of CoSi2 on Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
L. J. Chen ◽  
T. T. Chang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Epitaxial Growth ◽  
High Temperature Annealing ◽  
Transmission Electron ◽  
Cobalt Thin Films

The formation of epitaxial CoSi2 on silicon by both conventional and two-step annealing of cobalt thin films on silicon was studied by transmission electron microscopy.For two-step annealing, samples were first annealed at 350°C for 1 h, followed by high temperature annealing at 650–950°C for 1 h. The scheme was found to bevery effective in promoting the epitaxial growth of CoSi2 on silicon as well aseliminating faceted structures on Si(111). The results are discussed in terms of the driving away of impurities from the interfaces.

Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
J. L. Hoyt ◽  
E. F. Crabbé ◽  
R. F. W. Pease ◽  
J. F. Gibbons
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
High Temperature Annealing ◽  
Strong Reduction ◽  
Diffusion Front ◽  
Transmission Electron ◽  
Silicon Interface ◽  
New Evidence

ABSTRACTNonuniformities in the polysilicon-to-silicon interface and in the polysilicon structure are expected to produce a nonuniform diffusion front when arsenic is diffused from polysilicon during epitaxial alignment. Using transmission electron microscopy, we find surprisingly uniform arsenic diffusion fronts in the underlying silicon substrate following high temperature annealing. Several explanations of this result are proposed. We also report new evidence of a strong reduction in the time to achieve complete epitaxial transformation of the polysilicon when the polysilicon thickness is reduced. A corresponding reduction in the associated arsenic penetration depth is demonstrated.

Nucleation of Disorder in Fe3Al Alloys

1967 ◽  
Vol 25 ◽  
pp. 312-313
Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Antiphase Domain ◽  
Effect Of Temperature ◽  
Domain Structures ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Higher Temperature ◽  
The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Intergrowth of niobium tungsten oxides of the tetragonal tungsten bronze type

2020 ◽  
Vol 75 (11) ◽  
pp. 913-919
Author(s):  
Frank Krumeich
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Tungsten Bronze ◽  
Structural Complexity ◽  
Dark Field ◽  
Tetragonal Tungsten Bronze ◽  
Tungsten Oxides ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractSince the 1970s, high-resolution transmission electron microscopy (HRTEM) is well established as the most appropriate method to explore the structural complexity of niobium tungsten oxides. Today, scanning transmission electron microscopy (STEM) represents an important alternative for performing the structural characterization of such oxides. STEM images recorded with a high-angle annular dark field (HAADF) detector provide not only information about the cation positions but also about the distribution of niobium and tungsten as the intensity is directly correlated to the local scattering potential. The applicability of this method is demonstrated here for the characterization of the real structure of Nb7W10O47.5. This sample contains well-ordered domains of Nb8W9O47 and Nb4W7O31 besides little ordered areas according to HRTEM results. Structural models for Nb4W7O31 and twinning occurring in this phase have been derived from the interpretation of HAADF-STEM images. A remarkable grain boundary between well-ordered domains of Nb4W7O31 and Nb8W9O47 has been found that contains one-dimensionally periodic features. Furthermore, short-range order observed in less ordered areas could be attributed to an intimate intergrowth of small sections of different tetragonal tungsten bronze (TTB) based structures.

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