Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
J. L. Hoyt ◽  
E. F. Crabbé ◽  
R. F. W. Pease ◽  
J. F. Gibbons
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
High Temperature Annealing ◽  
Strong Reduction ◽  
Diffusion Front ◽  
Transmission Electron ◽  
Silicon Interface ◽  
New Evidence

ABSTRACTNonuniformities in the polysilicon-to-silicon interface and in the polysilicon structure are expected to produce a nonuniform diffusion front when arsenic is diffused from polysilicon during epitaxial alignment. Using transmission electron microscopy, we find surprisingly uniform arsenic diffusion fronts in the underlying silicon substrate following high temperature annealing. Several explanations of this result are proposed. We also report new evidence of a strong reduction in the time to achieve complete epitaxial transformation of the polysilicon when the polysilicon thickness is reduced. A corresponding reduction in the associated arsenic penetration depth is demonstrated.

Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Boundary Motion ◽  
High Temperature Annealing ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts

2013 ◽  
Vol 740-742 ◽  
pp. 485-489 ◽  
Author(s):  
Wei Huang ◽  
Shao Hui Chang ◽  
Xue Chao Liu ◽  
Zheng Zheng Li ◽  
Tian Yu Zhou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Oxide Layer ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
High Temperature Annealing ◽  
Contact Interface ◽  
Ohmic Behavior ◽  
Transmission Electron

The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was observed in the as-deposited contact interface. The native oxide layer cannot be removed at 650°C through rapid thermal annealing (RTA) and it was completely removed at 1000°C RTA. The residue of native oxide layer resulted in the Schottky characters. High temperature annealing (>950°C) not only removes the oxide layer in the near-SiC-interface, but also forms a well arranged flat Ni2Si/SiC interface, which contribute to the formation of ohmic behavior.

Structure and Strength of Rapidly Quenched Cu-Al2O3 Composites

1998 ◽  
Vol 555 ◽  
Author(s):  
A. I. Il'Insky ◽  
A. S. Terletsky ◽  
E. W. Zozulya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Strain Hardening ◽  
Vapor Condensation ◽  
High Temperature Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Three Stages ◽  
High Level

AbstractMicrostructure of dispersion hardened composites (DC) Cu-Al2O3 prepared by simultaneous vacuum vapor condensation of Cu and A12O3 was studied by X-ray diffractometry and transmission electron microscopy methods. After high temperature annealing at 900°C for 2 hours the composites retain the submicrocrystalline structure and high level of strength -0.9 GPa. It has been found that strain hardening of vacuum deposited Cu-A12O3 composites takes place in three stages that is not typical for well-known composites of metallurgical origin.

Structural Characterization of Nc-Si/A-Sio2 Superlattices Subjected To Thermal Treatment

1998 ◽  
Vol 536 ◽  
Author(s):  
G. F. Grom ◽  
L. Tsybeskov ◽  
K. D. Hirschman ◽  
P. M. Fauchet ◽  
J. P. McCaffrey ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Defect Density ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Si Nanocrystals

AbstractThe morphology of nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) is studied using Raman spectroscopy in the acoustic and optical phonon ranges, transmission electron microscopy (TEM), and atomic force microscopy (AFM). It is demonstrated that high temperature annealing (up to 1100°C) and oxidation in O2/H2O ambient do not destroy the SL structure, which retains its original periodicity and nc-Si/a-SiO2 interface abruptness. It is found that oxidation at high temperatures reduces the defect density in nc-Si/a-SiO2 SLs and induces the lateral coalescence of Si nanocrystals (NCs). The size, shape, packing density, and crystallographic orientation of the Si nanocrystals are studied as a function of the oxidation time.

Effects of Two-Step Annealing on the Epitaxialgrowth of CoSi2 on Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
L. J. Chen ◽  
T. T. Chang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Epitaxial Growth ◽  
High Temperature Annealing ◽  
Transmission Electron ◽  
Cobalt Thin Films

The formation of epitaxial CoSi2 on silicon by both conventional and two-step annealing of cobalt thin films on silicon was studied by transmission electron microscopy.For two-step annealing, samples were first annealed at 350°C for 1 h, followed by high temperature annealing at 650–950°C for 1 h. The scheme was found to bevery effective in promoting the epitaxial growth of CoSi2 on silicon as well aseliminating faceted structures on Si(111). The results are discussed in terms of the driving away of impurities from the interfaces.

Structural properties of Si nanoclusters produced by thermal annealing of SiOx films

2004 ◽  
Vol 817 ◽  
Author(s):  
Simona Boninelli ◽  
Fabio Iacona ◽  
Corrado Bongiorno ◽  
Corrado Spinella ◽  
Francesco Priolo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Quantitative Description ◽  
Dark Field ◽  
High Temperature Annealing ◽  
Transmission Electron

AbstractThe structural properties of Si nanoclusters embedded in SiO2, produced by high temperature annealing of SiOx films, have been investigated by energy filtered transmission electron microscopy. The presence of amorphous nanostructures, not detectable by using dark field transmission electron microscopy, has been demonstrated. By taking into account also this contribution, a quantitative description of the evolution of the samples upon thermal annealing has been accomplished. In particular, the nanocluster mean radius and the density of amorphous and crystalline clusters have been determined as a function of the annealing temperature.

Characterization of submicrometer fluid Inclusions in minerals by Analytical/Transmission Electron Microscopy and electron diffraction

1990 ◽  
Vol 48 (4) ◽  
pp. 424-424
Author(s):  
George Guthrie ◽  
David Veblen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Light Microscopy ◽  
Fluid Inclusions ◽  
Energy Dispersive Spectrometer ◽  
Analytical Transmission Electron Microscopy ◽  
Transmission Electron

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).

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