DX Centers and III-V Device Performance

1990 ◽  
Vol 184 ◽  
Author(s):  
Elias Muñoz-Merino
Keyword(s):  
Optical Properties ◽  
Low Temperatures ◽  
Thermal Emission ◽  
Systematic Research ◽  
Device Performance ◽  
Dx Centers ◽  
Noise Characteristics ◽  
Deep Donor ◽  
Donor States ◽  
Bipolar Device

ABSTRACTThe properties of deep donor states (DX's centers) in III-V alloys are reviewed in relation to their influence on the device characteristics and limitations. Because of the systematic research being performed on AlGaAs, most of the information presented refers to such material. The electron thermal emission and capture properties of the DX's are then related to the DC and noise characteristics in heterojunction transistors. The optical properties of DX centers indicate a clear difference between unipolar and bipolar device performance at low temperatures. The technical efforts to avoid DX centers will also be described.

Oxygen Stoichiometry and the High Tc Superconducting Oxides

MRS Bulletin ◽  
1989 ◽  
Vol 14 (1) ◽  
pp. 53-57 ◽  
Author(s):  
J-M. Tarascon ◽  
B.G. Bagley
Keyword(s):  
Optical Properties ◽  
Liquid Nitrogen ◽  
Broad Spectrum ◽  
Low Temperatures ◽  
Large Family ◽  
Oxygen Stoichiometry ◽  
High Tc ◽  
Metallic Conductivity ◽  
Superconducting Oxides ◽  
Technological Interest

Oxide compounds have been extensively studied through the years because they exhibit a broad spectrum of electrical, magnetic, and optical properties providing both scientific and technological interest. Most oxides are insulators, but a few of them (e.g., LiTi2O4 or BaPb1−x BixO3 show metallic conductivity and even superconductivity at low temperatures. The discovery of superconductivity at 35 K by Bednorz and Müller in the cuprate La-Ba-Cu-O system prompted the search for other high Tc compounds among this oxide family. Superconductivity above liquid nitrogen was then rapidly achieved with the Y-Ba-Cu-O system (Tc=90 K) and subsequently, with the Bi-Sr-Ca-Bu-O and Tl-Ba-Ca-Cu-O systems, Tc was raised to 110 K and then 125 K.A common feature of these new high Tc cuprates is that they belong to the large family of materials, termed perovskites, which have been studied over the years because of their ability to absorb or lose oxygen reversibly (i.e., for their nonstoichiometry in oxygen). It had been previously established in the field of superconductivity that Tc is extremely sensitive to compositional stoichiometry.

Origin of Band-Tail and Deep-Donor States in Cu2ZnSnS4 Solar Cells and Their Suppression through Sn-Poor Composition

2019 ◽  
Vol 10 (24) ◽  
pp. 7929-7936 ◽  
Author(s):  
Suyu Ma ◽  
Hongkai Li ◽  
Jin Hong ◽  
Han Wang ◽  
Xiaoshuang Lu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Tail ◽  
Deep Donor ◽  
Donor States

Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

Low-Temperature Pecvd Si3N4 Films for GaAs Encapsulation and Passivation.

1989 ◽  
Vol 165 ◽  
Author(s):  
R. L. Pfeffer ◽  
G. J. Gerardi ◽  
R. A. Lux ◽  
K. A. Jones ◽  
E. H. Poindexter ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Low Temperatures ◽  
Ohmic Contacts ◽  
Ir Spectrometry ◽  
Ion Channeling ◽  
Interface Damage ◽  
Passivation Layers ◽  
Inert Carrier ◽  
Reactive Gases

AbstractWe have begun a detailed study of the physical properties of Si3 N4 films deposited at low temperatures using a PECVD process based on dilution of reactive gases with inert carrier gas [1] in order to investigate their feasibility for use as post-implant encapsulants and/or device passivation layers for GaAs. The films and substrates are analyzed by ion channeling, ellipsometry, IR spectrometry, ESR, RBS, and SEM to evaluate implantationinduced substrate and interface damage as well as the films’ optical properties, surface morphology, stoichiometry, uniformity, stress, and electrical trapping characteristics. Following furnace or RTA annealing they are recharacterized, adding SIMS to evaluate As diffusion into the films. Both Schottky and ohmic contacts are then formed and used to measure Hall mobility, trap density and 1/f noise. Preliminary results of these studies are presented and compared with those obtained using other techniques such as wafer-to-wafer As entrapment, arsine overpressure, or conventional CVD.

Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals

2012 ◽  
Vol 733 ◽  
pp. 224-227 ◽  
Author(s):  
Nikolai Yu. Arutynov ◽  
Mohamed Elsayed ◽  
Reinhard Krause-Rehberg ◽  
Valentin V. Emtsev ◽  
Gagik A. Oganesyan ◽  
...  
Keyword(s):  
Activation Energy ◽  
Room Temperature ◽  
Positron Lifetime ◽  
Shallow Donor ◽  
Electrical Measurements ◽  
Positron Annihilation Lifetime ◽  
First Order ◽  
Deep Donor ◽  
Donor States ◽  
Mev Protons

The recovery of shallow donor states of the atoms of phosphorus in n-FZ-Si:P material irradiated at the room temperature with 15 MeV protons was studied in the course of isochronal annealing. This process was investigated by the positron annihilation lifetime (PAL) spectroscopy and by low-temperature electrical measurements. The positron traps of a vacancy type manifesting themselves as deep donors have been revealed. These defects begin to anneal at ~ 593 K– 613 K; roughly estimated activation energy of the process is Ea ≈ 0.59 eV under the first order of reaction. The results suggest the involvement, at least, of one vacancy and the impurity atom of phosphorus in the microstructure of the deep donor.

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