Prospects of a-Sige:H Alloys for Solar Cell Application

MRS Proceedings ◽

10.1557/proc-192-27 ◽

1990 ◽

Vol 192 ◽

Cited By ~ 10

Author(s):

C.M. Fortmann

Keyword(s):

Solar Cell ◽

Band Gap ◽

Electronic Transport ◽

Electron Mobility ◽

Growth Conditions ◽

Growth Surface ◽

Solar Cell Performance ◽

Solar Cell Application ◽

Performance Loss ◽

Hydrogen Radical

ABSTRACTThe transport properties of intrinsic a-SiGe films are found to be limited by poor electron mobility. The relationship between electronic transport and composition (Si, Ge and H content) is established. The electron mobility decreases with increasing hydrogen content for a given Ge content. The relation between growth conditions and film composition is developed. Growth conditions that reduce the extent of gas phase polymerization as well as the flux of hydrogen radical to the growth surface yield the best electronic transport. The best a-SiGe:H alloys of 1.3 eV band gap are used to study the effects of band gap grading on solar cell performance. Solar cells analysis is used to determine both hole and electron transport. Cell designs that minimize performance loss due to poor electron mobility are considered.

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Syntheses and characterization of carbazole based new low-band gap copolymers containing highly soluble benzimidazole derivatives for solar cell application

Journal of Polymer Science Part A Polymer Chemistry ◽

10.1002/pola.24435 ◽

2010 ◽

Vol 49 (2) ◽

pp. 369-380 ◽

Cited By ~ 20

Author(s):

Jaehong Kim ◽

Sung Heum Park ◽

Jinwoo Kim ◽

Shinuk Cho ◽

Youngeup Jin ◽

...

Keyword(s):

Solar Cell ◽

Band Gap ◽

Benzimidazole Derivatives ◽

Low Band Gap ◽

Solar Cell Application

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Chemically synthesized Ti-doped SnS2 thin films as intermediate band gap material for solar cell application

Optical and Quantum Electronics ◽

10.1007/s11082-021-03424-7 ◽

2022 ◽

Vol 54 (2) ◽

Author(s):

Birendra Kumar Rajwar ◽

Shailendra Kumar Sharma

Keyword(s):

Thin Films ◽

Solar Cell ◽

Band Gap ◽

Solar Cell Application ◽

Intermediate Band

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Exploring the Internal Radiative Efficiency of Selective Area Nanowires

Journal of Nanomaterials ◽

10.1155/2019/6924163 ◽

2019 ◽

Vol 2019 ◽

pp. 1-13

Author(s):

A. Cavalli ◽

J. E. M. Haverkort ◽

E. P. A. M. Bakkers

Keyword(s):

Solar Cell ◽

High Growth ◽

Optical Emission ◽

Building Blocks ◽

Growth Conditions ◽

Material System ◽

Solar Cell Application ◽

Precise Control ◽

Radiative Efficiency ◽

Selective Area

Nanowires are ideal building blocks for next-generation solar cell applications. Nanowires grown with the selective area (SA) approach, in particular, have demonstrated very high material quality, thanks to high growth temperature, defect-free crystalline structure, and absence of external catalysts, especially in the InP material system. A comprehensive study on the influence of growth conditions and device processing on optical emission is still necessary though. This article presents an investigation of the nanowire optical properties, performed in order to optimize the internal radiative efficiency. In an initial preamble, the motivation for this study is discussed, as well as the morphology and crystallinity of the nanowires. The effect on the nanowire photoluminescence of several intrinsic and extrinsic parameters and factors are then presented in three sections: first, the influence of basic growth conditions such as the temperature and the precursor ratio is studied. Subsequently, the effects of varying dopant molar flows are explored, keeping in mind the intended solar cell application. Third, the manner in which the processing and the passivation affect the nanowire optical emission is discussed. Precise control of the growth conditions allows maximizing the nanowire internal radiative efficiency and thus their performance in solar cells and other optoelectronic devices.

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Wide band‐gap, fairly conductivep‐type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application

Applied Physics Letters ◽

10.1063/1.95655 ◽

1985 ◽

Vol 46 (3) ◽

pp. 272-274 ◽

Cited By ~ 27

Author(s):

Akira Yamada ◽

Jean Kenne ◽

Makoto Konagai ◽

Kiyoshi Takahashi

Keyword(s):

Silicon Carbide ◽

Solar Cell ◽

Amorphous Silicon ◽

Band Gap ◽

Hydrogenated Amorphous Silicon ◽

Wide Band ◽

Wide Band Gap ◽

Direct Photolysis ◽

Solar Cell Application ◽

Hydrogenated Amorphous

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Amorphous Silicon Films from Dichlorosilane and SiH4 for Solar Cells

MRS Proceedings ◽

10.1557/proc-420-883 ◽

1996 ◽

Vol 420 ◽

Cited By ~ 3

Author(s):

A. M. Payne ◽

S. Wagner

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Amorphous Silicon ◽

Transport Properties ◽

Electronic Transport ◽

Silicon Films ◽

Cell Performance ◽

Solar Cell Performance ◽

Electronic Transport Properties ◽

Standard Cells

AbstractWe have deposited amorphous silicon films from mixtures of dichlorosilane (SiH2C12, DCS), and silane (SiH4) and made the first p-i-n solar cells using i-layers of this material. We measured optical and electronic transport properties of the DCS-derived films and relate them to the solar cell performance. The DCS cells are compared to standard cells made with SilH4.

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