Effect of the Depletion Region of a-Si:H Schottky Diodes on the Time-of-Flight Mobility-Lifetime Product

1990 ◽  
Vol 192 ◽  
Author(s):  
N. Wyrsch ◽  
P. Roca i Cabarrocas ◽  
S. Wagner ◽  
V. Viret
Keyword(s):  
Collection Efficiency ◽  
Schottky Diodes ◽  
Time Of Flight ◽  
Internal Field ◽  
Laser Wavelength ◽  
Depletion Region ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Trapping Time ◽  
Transient Photoconductivity

ABSTRACTThe effect of the depletion region in amorphous silicon Schottky diodes on the mobility-deep trapping lifetime product μτ of electrons has been investigated using transient photoconductivity techniques. We varied the laser wavelength of the exciting laser in time-of-flight (TOF) measurements. The results are correlated with measurements of the internal field by means of the charge collection efficiency, and with measurement of the deep-trapping time by the Delayed-Field TOF technique (DFTOF). We find that the electron μτ decreases from the bulk toward the top surface.

scholarly journals Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Sensors ◽  
2019 ◽  
Vol 19 (23) ◽  
pp. 5107 ◽  
Author(s):  
Sandupatla ◽  
Arulkumaran ◽  
Ranjan ◽  
Ing ◽  
Murmu ◽  
...  
Keyword(s):  
Low Voltage ◽  
Collection Efficiency ◽  
Schottky Diodes ◽  
High Energy ◽  
Charge Collection ◽  
Charge Carrier Density ◽  
Free Standing ◽  
Charge Collection Efficiency ◽  
High Charge ◽  
Drift Layer

A low voltage (–20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 1014 /cm3) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky diodes on free-standing n+-GaN substrate. The observed CCE was 30% higher than the bulk GaN (400 µm)-based Schottky barrier diodes (SBD) at –20 V. This is the first report of α–particle detection at 5.48 MeV with a high CCE at –20 V operation. In addition, the detectors also exhibited a three-times smaller variation in CCE (0.12 %/V) with a change in bias conditions from –120 V to –20 V. The dramatic reduction in CCE variation with voltage and improved CCE was a result of the reduced charge carrier density (CCD) due to the compensation by Mg in the grown drift layer (DL), which resulted in the increased depletion width (DW) of the fabricated GaN SBDs. The SBDs also reached a CCE of approximately 96.7% at –300 V.

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  
Keyword(s):  
Radiation Damage ◽  
3D Imaging ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Spatial Mapping ◽  
Charge Collection Efficiency ◽  
Silicon Sensor

Comparative Studies of Ionizing Radiation Detectors Made on the Basis of Various Types of Diamond Plates

2021 ◽  
Vol 23 (2) ◽  
pp. 68-75
Author(s):  
Altukhov A.A. ◽  
Keyword(s):  
Ionizing Radiation ◽  
Single Crystal ◽  
Comparative Studies ◽  
Collection Efficiency ◽  
Radiation Detectors ◽  
Charge Collection ◽  
Alpha Radiation ◽  
Charge Collection Efficiency ◽  
Polarization Phenomena

The results of experiments on the study of polarization phenomena and the charge collection efficiency in test structures of diamond ionizing radiation detectors using diamond plates of various types, including single-crystal NRNT-type, single-crystal CVD-type, as well as polycrystalline type, when exposed to alpha-radiation with an energy of 5.5 MeV are presented. Studies have demonstrated the existence of a number of problems with the device quality of diamond plates that affect the performance of spec-trometric-type detectors.

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