Effect of Bias on Recovery Rates of Stressed Amorphous Silicon Mis Structures

1990 ◽  
Vol 192 ◽  
Author(s):  
W. B. Jackson ◽  
M. Hack
Keyword(s):  
Fermi Level ◽  
Amorphous Silicon ◽  
Conduction Band ◽  
Defect Formation ◽  
Defect States ◽  
Theoretical Understanding ◽  
Fermi Level Position ◽  
Electron Accumulation ◽  
Capacitance Voltage ◽  
Mis Structures

ABSTRACTThe effect of Fermi level position on the annealing of defects created by electron accumulation is investigated. Results indicate that holes accelerate the annealing of defects created by electrons confirming the theoretical understanding of the proximity compensated layer. Capacitance-voltage curves indicate that hole accumulation tends to create defect states located closer to the conduction band than electron accumulation–a result in agreement with energetics of defect formation.

Toward a Practical Model of a-Si:H Defects in Intensity-Time-Temperature Space

1994 ◽  
Vol 336 ◽  
Author(s):  
D. Caputo ◽  
J. Bullock ◽  
H. Gleskova ◽  
S. Wagner
Keyword(s):  
Light Intensity ◽  
Fermi Level ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Defect States ◽  
Quasi Fermi Level ◽  
Practical Model ◽  
Density Of Defect States ◽  
Hydrogenated Amorphous

ABSTRACTIn this paper we develop a model of the defect kinetics in hydrogenated Amorphous silicon (a:Si:H) with the goal of predicting the density of defect states g (E) established by any given light intensity I, for arbitrary times t and temperatures T. While we build on widely accepted expressions for the the rates of light-induced and thermal annealing, we examine in more detail the light induced annealing (LIA) term. The model shows that the LIA process can be described with the thermal annealing term if a suitable reduction to the annealing energy is introduced. This reduction depends on the light intensity such as to suggest a relation to the shift of the electron quasi-Fermi level under illumination.

The Fermi level position in doped amorphous silicon

1979 ◽  
Vol 12 (5) ◽  
pp. L209-L213 ◽  
Author(s):  
R H Williams ◽  
R R Varma ◽  
W E Spear ◽  
P G Le Comber
Keyword(s):  
Fermi Level ◽  
Amorphous Silicon ◽  
Fermi Level Position

Defect States in Silicon Nitride

1985 ◽  
Vol 49 ◽  
Author(s):  
John Robertson ◽  
Martin J. Powell
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Energy Levels ◽  
Dangling Bond ◽  
Defect States ◽  
Amorphous Silicon Nitride ◽  
Defect Centers ◽  
Electron Accumulation ◽  
Nitride Superlattices ◽  
Silicon Silicon

AbstractThe energy levels of defect centers in amorphous silicon nitride have been calculated. The results are related to recent photoemission and light-induced electron spin resonancedata. The Si dangling bond is argued to be the memory trap in MNOS devices and to be responsible for the electron accumulation at interfaces with amorphous silicon and for the n-type chargetransfer doping of amorphous silicon-silicon nitride superlattices.

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