Tunneling Assisted Photocurrent Multiplication in a-Si Based p-i/Sinx/i-n Structure Junction

1990 ◽  
Vol 192 ◽  
Author(s):  
M. Yoshimi ◽  
K. Hattori ◽  
H. Okamoto ◽  
Y. Hamakawa
Keyword(s):  
Electric Field ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Systematic Investigation ◽  
High Electric Field ◽  
Optoelectronic Properties ◽  
Localized States

ABSTRACTPhotocurrent multiplication has been observed in a-Si based p−i/SiNx/i−n junction cells under reverse biased high electric field. An apparent external quantum efficiency exceeds 20. A systematic investigation on electric and optoelectronic properties has been made to clarify the mechanism of photocarrier multiplication. The results indicate the possibility of inter-band tunneling via localized states in the a-SiN layer, which is induced by field-redistribution due to the built-up of trapped charges at the a-SiN/a-Si interface.

Synthesis and Electroluminescence Property of Anthracene Green Fluorescent Derivatives Based on Optimized Side Groups

2021 ◽  
Vol 21 (7) ◽  
pp. 4037-4041
Author(s):  
Sangshin Park ◽  
Hyukmin Kwon ◽  
Seokwoo Kang ◽  
Sunwoo Park ◽  
Hyocheol Jung ◽  
...  
Keyword(s):  
Electric Field ◽  
Energy Conversion ◽  
Current Efficiency ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Molecular Size ◽  
Green Fluorescent ◽  
Fluorescent Derivatives ◽  
Electroluminescence Property

Molecular size of OLED emitting materials is nano-metric size and when it is applied to the electric field it emits the light based on the energy conversion result. As new green fluorescent emitters, N,N,N',N'-Tetra-m-tolyl-anthracene-9,10-diamine (m-Me-TAD) and N,N,N',N'-Tetra-p-tolyl-anthracene-9,10-diamine (p-Me-TAD) were synthesized and the properties were evaluated. In solution state, photoluminescence (PL) maximum wavelength is 517 nm for m-Me-TAD and 529 nm for p-Me-TAD. In electroluminescence (EL) spectra, EL maximum wavelength of m-Me-TAD is 518 nm and p-Me-TAD is 533 nm. The doped device using m-Me-TAD as green fluorescent dopant exhibited current efficiency (CE) of 17.41 cd/A and external quantum efficiency (EQE) of 7.41%. The doped device with p-Me-TAD was optimized in order to achieve a green OLED with high efficiency.

Enhanced Quantum Efficiency of Photocathode under High Electric Field

2002 ◽  
Vol 41 (Part 1, No. 12) ◽  
pp. 7402-7406 ◽  
Author(s):  
Takahiro Inoue ◽  
Shuji Miyamoto ◽  
Sho Amano ◽  
Mitsuyasu Yatsuzuka ◽  
Takayasu Mochizuki
Keyword(s):  
Electric Field ◽  
Quantum Efficiency ◽  
High Electric Field

scholarly journals Suppression of Electric Field-Induced Segregation in Sky-Blue Perovskite Light-Emitting Electrochemical Cells

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1937
Author(s):  
Tatiana G. Liashenko ◽  
Anatoly P. Pushkarev ◽  
Arnas Naujokaitis ◽  
Vidas Pakštas ◽  
Marius Franckevičius ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Film Deposition ◽  
Infrared Light ◽  
Electrochemical Cells ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Turn On

Inexpensive perovskite light-emitting devices fabricated by a simple wet chemical approach have recently demonstrated very prospective characteristics such as narrowband emission, low turn-on bias, high brightness, and high external quantum efficiency of electroluminescence, and have presented a good alternative to well-established technology of epitaxially grown III-V semiconducting alloys. Engineering of highly efficient perovskite light-emitting devices emitting green, red, and near-infrared light has been demonstrated in numerous reports and has faced no major fundamental limitations. On the contrary, the devices emitting blue light, in particular, based on 3D mixed-halide perovskites, suffer from electric field-induced phase separation (segregation). This crystal lattice defect-mediated phenomenon results in an undesirable color change of electroluminescence. Here we report a novel approach towards the suppression of the segregation in single-layer perovskite light-emitting electrochemical cells. Co-crystallization of direct band gap CsPb(Cl,Br)3 and indirect band gap Cs4Pb(Cl,Br)6 phases in the presence of poly(ethylene oxide) during a thin film deposition affords passivation of surface defect states and an increase in the density of photoexcited charge carriers in CsPb(Cl,Br)3 grains. Furthermore, the hexahalide phase prevents the dissociation of the emissive grains in the strong electric field during the device operation. Entirely resistant to 5.7 × 106 V·m−1 electric field-driven segregation light-emitting electrochemical cell exhibits stable emission at wavelength 479 nm with maximum external quantum efficiency 0.7%, maximum brightness 47 cd·m−2, and turn-on bias of 2.5 V.

Study on Charge and Discharge Phenomenon of Lithium Ion Battery under High Electric Field

2020 ◽  
Vol 140 (8) ◽  
pp. 650-655
Author(s):  
Shoki Tsuji ◽  
Yoji Fujita ◽  
Hiroaki Urushibata ◽  
Akihiko Kono ◽  
Ryoichi Hanaoka ◽  
...  
Keyword(s):  
Electric Field ◽  
Lithium Ion Battery ◽  
Lithium Ion ◽  
High Electric Field

Demonstration of ultra-small (0.2%) for mini-displays

2020 ◽  
Vol 14 (1) ◽  
pp. 011004
Author(s):  
Shubhra S. Pasayat ◽  
Chirag Gupta ◽  
Matthew S. Wong ◽  
Ryan Ley ◽  
Michael J. Gordon ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency
Sign in / Sign up

Export Citation Format

Share Document