B(Ch3)3 as P Layer Doping Gas

1990 ◽  
Vol 192 ◽  
Author(s):  
D. S. Shen ◽  
H. Chatham ◽  
R. E. I. Schropp
Keyword(s):  
Thermal Stability ◽  
Solar Cells ◽  
Deposition Rate ◽  
High Deposition Rate ◽  
Critical Part ◽  
Single Junction ◽  
Boron Doped ◽  
Conversion Efficiencies

ABSTRACTThe boron doped p-layer is a critical part of a-Si:H solar cells. Trimethylboron (B(CH3)3) has been suggested to be a better doping gas and has a better thermal stability than B2H6. Single junction a-Si:H solar cells and a-Si:H/a-Si:H tandem cells with the p-layers deposited using B(CH3)3 have resulted in conversion efficiencies of 11.4% and 10.4%, respectively. Using these new p+-layers, we also reached 10% efficiencies in single junction a-Si:H solar cells with the i-layer deposited at a high deposition rate of ∼ 2 nm/s from either SiH4 or Si2H6 as a source gas.

Preparation of a-Si:H and a-SiGe:H I-Layers for Nip Solar Cells at High Deposition Rates Using a Very High Frequency Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
S.J. Jones ◽  
X. Deng ◽  
T. Liu ◽  
M. Izu
Keyword(s):  
Solar Cells ◽  
Deposition Rate ◽  
High Frequency ◽  
High Efficiency ◽  
High Deposition Rate ◽  
Very High Frequency ◽  
Deposition Rates ◽  
Single Junction ◽  
Layer Deposition ◽  
Very High

ABSTRACTThe 70 MHz Plasma Enhance Chemical Vapor Deposition (PECVD) technique has been tested as a high deposition rate (10 A/s) process for the fabrication of a-Si:H and a-SiGe:H alloy ilayers for high efficiency nip solar cells. As a prelude to multi-junction cell fabrication, the deposition conditions used to make single-junction a-Si:H and a-SiGe:H cells using this Very High Frequency (VHF) method have been varied to optimize the material quality and the cell efficiencies. It was found that the efficiencies and the light stability for a-Si:H single-junction cells can be made to remain relatively constant as the i-layer deposition rate is varied from 1 to 10 Å/s. Also these stable efficiencies are similar to those for cells made at low deposition rates (1 Å/s) using the standard 13.56 MHz PECVD technique. For the a-SiGe:H cells of the same i-layer thickness, use of the VHF technique leads to cells with higher currents and an ability to more easily current match triple-junction cells prepared at high deposition rates which should lead to higher multi-junction efficiencies. Thus, use of this VHF method in the production of large area a- Si:H based multi-junction solar modules will allow for higher i-layer deposition rates, higher manufacturing throughput and reduced module cost.

Improving the stabilities of organic solar cells via employing a mixed cathode buffer layer

2021 ◽  
Vol 95 (3) ◽  
pp. 30201
Author(s):  
Xi Guan ◽  
Yufei Wang ◽  
Shang Feng ◽  
Jidong Zhang ◽  
Qingqing Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Solar Cells ◽  
Mixed Layer ◽  
Organic Solar Cells ◽  
Buffer Layers ◽  
Commercial Development ◽  
Conversion Efficiencies ◽  
Thermal Stability Of ◽  
Cathode Buffer Layers

Organic solar cells (OSCs) have been fabricated using cathode buffer layers based on bathocuproine (BCP) and 4,4'-N,N'-dicarbazole-biphenyl (CBP). It is found that despite nearly same power conversion efficiencies, the bilayer of BCP/CBP shows increased thermal stability of device than the monolayer of BCP, mostly because upper CBP thin film stabilizes under BCP thin film. The mixed layer of BCP:CBP gives slightly decreased efficiency than BCP and BCP/CBP, mostly because the electron mobility of the OSC using BCP:CBP is decreased than those using BCP and BCP/CBP. However, the BCP:CBP increases thermal stability of device than BCP and BCP/CBP, ascribed to that the BCP and CBP effectively inhibit reciprocal tendencies of crystallizations in the mixed layer. Moreover, the BCP:CBP improves the light stability of device than the BCP and BCP/CBP, because the energy transfer from BCP to CBP in in the mixed layer effectively decelerates the photodegradation of BCP. We provide a facial method to improve the stabilities of cathode buffer layers against heat and light, beneficial to the commercial development of OSCs.

High-deposition rate a-Si:H n–i–p solar cells grown by HWCVD

2001 ◽  
Vol 395 (1-2) ◽  
pp. 292-297 ◽  
Author(s):  
Brent P Nelson ◽  
Eugene Iwaniczko ◽  
A.Harv Mahan ◽  
Qi Wang ◽  
Yueqin Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deposition Rate ◽  
High Deposition Rate

Improvement of Single-Junction a-Si:H Thin-Film Solar Cells Toward 10% Efficiency

2011 ◽  
Vol 1321 ◽  
Author(s):  
P. H. Cheng ◽  
S. W. Liang ◽  
Y. P. Lin ◽  
H. J. Hsu ◽  
C. H. Hsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Electron Hole ◽  
Single Junction ◽  
Boron Doped ◽  
Hydrogenated Amorphous

ABSTRACTThe hydrogenated amorphous silicon (a-Si:H) single-junction thin-film solar cells were fabricated on SnO2:F-coated glasses by plasma-enhanced chemical vapor deposition (PECVD) system. The boron-doped amorphous silicon carbide (a-SiC:H) was served as the window layer (p-layer) and the undoped a-SiC:H was used as a buffer layer (b-layer). The optimization of the p/b/i/n thin-films in a-Si:H solar cells have been carried out and discussed. Considering the effects of light absorption, electron-hole extraction and light-induced degradation, the thicknesses of p, b, n and i layers have been optimized. The optimal a-Si:H thin-film solar cell having an efficiency of 9.46% was achieved, with VOC=906 mV, JSC=14.42 mA/cm2 and FF=72.36%.

Recent Advances in A-Si Solar Cell Technology in Japan

1986 ◽  
Vol 70 ◽  
Author(s):  
Y. Kuwano
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Single Junction ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Recent Advances ◽  
Cell Structures ◽  
Cell Stability ◽  
Terminal Structure ◽  
Conversion Efficiencies

ABSTRACTRecent advances in a-Si solar cells in Japan are reviewed. Improvements in single-junction and multi-junction solar cells are described in three main points, namely, fabrication methods, materials, and cell structures. Recently, a conversion efficiency of 11.7% was obtained for a single-junction structure. For an a-Si/poly-Si stacked structure and an a-Si/(CdS/CdTe) 4 terminal structure, conversion efficiencies of more than 13% were achieved.Then recent advances in the prevention of the light induced degradation of a-Si solar cells is mentioned. Several methods which can improve the a-Si solar cell stability are described.Finally, the present status of the industrialization of a-Si solar cells and some of the latest applications are described together with their propects.

High Efficiency Monolithic Multi-Junction Solar Cells Using Lattice-Mismatched Growth

1998 ◽  
Vol 551 ◽  
Author(s):  
R.W. Hoffman ◽  
N.S. Fatemi ◽  
M.A. Stan ◽  
P. Jenkins ◽  
V.G. Weizer ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Device Performance ◽  
Lattice Match ◽  
New Approach ◽  
Single Junction ◽  
Junction Device ◽  
Ultimate Efficiency ◽  
Conversion Efficiencies

AbstractThe demand for spacecraft power has dramatically increased recently. Higher efficiency, multi-junction devices are being developed to satisfy the demand. The multi-junction cells presently being developed and flown do not employ optimized bandgap combinations for ultimate efficiency due to the traditional constraint of maintaining lattice match to available substrates. We are developing a new approach to optimize the bandgap combination and improve the device performance that is based on relaxing the condition of maintaining lattice match to the substrate. We have designed cells based on this approach, fabricated single junction components cells and tested their performance. We will report on our progress toward achieving beginning-of-life AMO multi-junction device conversion efficiencies above 30%.

scholarly journals N-type window layer and its application in high deposition rate microcrystalline silicon solar cells

2009 ◽  
Vol 58 (7) ◽  
pp. 5041
Author(s):  
Zhang Xiao-Dan ◽  
Zhao Ying ◽  
Sun Fu-He ◽  
Wang Shi-Feng ◽  
Han Xiao-Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deposition Rate ◽  
Window Layer ◽  
Silicon Solar Cells ◽  
High Deposition Rate ◽  
Microcrystalline Silicon

Stability of P-I-N Amorphous Silicon Solar Cells with Boron-Doped and Undoped I-Layers

1985 ◽  
Vol 49 ◽  
Author(s):  
Anthony Catalano ◽  
Rajeewa R. Arya ◽  
Ralph C. Kerns
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Boron Doping ◽  
Poor Quality ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Layer Material ◽  
Boron Doped ◽  
Conversion Efficiencies ◽  
Initial Conversion

AbstractBoron-doping the i-layer in p-i-n amorphous silicon solar cells improves the device performance when the density of impurities in the undoped i-layer material is high (< 1020 cm-3). While this technique can boost the initial device efficiencies for poor quality i-layer material, our devices degrade faster than devices made with undoped, low impurity i-layer material. We have measured the degradation of photovoltaic parameters as a function of continuous AM1 exposure time for devices with and without B-doped i-layers. For single junction p-i-n solar cells with comparable initial conversion efficiencies (< 7%, area < 1cm2) we find that our devices containing i-layers deposited from gas mixtures containing 2–3 ppm diborane degrade faster than devices containing undoped i-layers. Similar effects are observed when two-junction stacked cells with B-doped i-layers are compared to two-junction stacked cells with undoped i-layers.

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