High Efficiency Monolithic Multi-Junction Solar Cells Using Lattice-Mismatched Growth

1998 ◽  
Vol 551 ◽  
Author(s):  
R.W. Hoffman ◽  
N.S. Fatemi ◽  
M.A. Stan ◽  
P. Jenkins ◽  
V.G. Weizer ◽  
...  

AbstractThe demand for spacecraft power has dramatically increased recently. Higher efficiency, multi-junction devices are being developed to satisfy the demand. The multi-junction cells presently being developed and flown do not employ optimized bandgap combinations for ultimate efficiency due to the traditional constraint of maintaining lattice match to available substrates. We are developing a new approach to optimize the bandgap combination and improve the device performance that is based on relaxing the condition of maintaining lattice match to the substrate. We have designed cells based on this approach, fabricated single junction components cells and tested their performance. We will report on our progress toward achieving beginning-of-life AMO multi-junction device conversion efficiencies above 30%.

2018 ◽  
Author(s):  
Henk Bolink ◽  
Lidon Gil-Escrig ◽  
Pablo P. Boix ◽  
Cristina Momblona ◽  
Jorge Avila ◽  
...  

2020 ◽  
Author(s):  
Masafumi Yamaguchi

The III-V compound solar cells represented by GaAs solar cells have contributed as space and concentrator solar cells and are important as sub-cells for multi-junction solar cells. This chapter reviews progress in III-V compound single-junction solar cells such as GaAs, InP, AlGaAs and InGaP cells. Especially, GaAs solar cells have shown 29.1% under 1-sun, highest ever reported for single-junction solar cells. In addition, analytical results for non-radiative recombination and resistance losses in III-V compound solar cells are shown by considering fundamentals for major losses in III-V compound materials and solar cells. Because the limiting efficiency of single-junction solar cells is 30-32%, multi-junction junction solar cells have been developed and InGaP/GaAs based 3-junction solar cells are widely used in space. Recently, highest efficiencies of 39.1% under 1-sun and 47.2% under concentration have been demonstrated with 6-junction solar cells. This chapter also reviews progress in III-V compound multi-junction solar cells and key issues for realizing high-efficiency multi-junction cells.


2015 ◽  
Vol 2015 ◽  
pp. 1-10 ◽  
Author(s):  
Guiming Peng ◽  
Xueqing Xu ◽  
Gang Xu

The ramping solar energy to electricity conversion efficiencies of hybrid organic-inorganic perovskite solar cells during the last five years have opened new doors to low-cost solar energy. The record power conversion efficiency has climbed to 19.3% in August 2014 and then jumped to 20.1% in November. In this review, the main achievements for perovskite solar cells categorized from a viewpoint of device structure are overviewed. The challenges and prospects for future development of this field are also briefly presented.


2013 ◽  
Vol 21 (5) ◽  
pp. 821-826 ◽  
Author(s):  
Simon Hänni ◽  
Grégory Bugnon ◽  
Gaetano Parascandolo ◽  
Mathieu Boccard ◽  
Jordi Escarré ◽  
...  

Nano Energy ◽  
2021 ◽  
pp. 106712
Author(s):  
Jiakai Zhou ◽  
Qian Huang ◽  
Yi Ding ◽  
Guofu Hou ◽  
Ying Zhao

2016 ◽  
Vol 7 (7) ◽  
pp. 1602000 ◽  
Author(s):  
Long Ye ◽  
Wenchao Zhao ◽  
Sunsun Li ◽  
Subhrangsu Mukherjee ◽  
Joshua H. Carpenter ◽  
...  

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 430 ◽  
Author(s):  
Cao Yu ◽  
Shengzhi Xu ◽  
Jianxi Yao ◽  
Shuwei Han

Crystalline silicon (c-Si) is the dominating photovoltaic technology today, with a global market share of about 90%. Therefore, it is crucial for further improving the performance of c-Si solar cells and reducing their cost. Since 2014, continuous breakthroughs have been achieved in the conversion efficiencies of c-Si solar cells, with a current record of 26.6%. The great efficiency boosts originate not only from the materials, including Si wafers, emitters, passivation layers, and other functional thin films, but also from novel device structures and an understanding of the physics of solar cells. Among these achievements, the carrier-selective passivation contacts are undoubtedly crucial. Current carrier-selective passivation contacts can be realized either by silicon-based thin films or by elemental and/or compound thin films with extreme work functions. The current research and development status, as well as the future trends of these passivation contact materials, structures, and corresponding high-efficiency c-Si solar cells will be summarized.


1990 ◽  
Vol 192 ◽  
Author(s):  
D. S. Shen ◽  
H. Chatham ◽  
R. E. I. Schropp

ABSTRACTThe boron doped p-layer is a critical part of a-Si:H solar cells. Trimethylboron (B(CH3)3) has been suggested to be a better doping gas and has a better thermal stability than B2H6. Single junction a-Si:H solar cells and a-Si:H/a-Si:H tandem cells with the p-layers deposited using B(CH3)3 have resulted in conversion efficiencies of 11.4% and 10.4%, respectively. Using these new p+-layers, we also reached 10% efficiencies in single junction a-Si:H solar cells with the i-layer deposited at a high deposition rate of ∼ 2 nm/s from either SiH4 or Si2H6 as a source gas.


Sign in / Sign up

Export Citation Format

Share Document