Raman Scattering Characterization of Bonding Defects in Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Raphael Tsu
Keyword(s):  
Energy Density ◽  
Raman Scattering ◽  
Single Crystal ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Raman Peak ◽  
Crystal Silicon ◽  
Amorphous Si ◽  
Phonon Structure

ABSTRACTRaman scattering is used for the characterization of defects in Si. Damage is produced in single crystal silicon by ion-implantation of As and Si. The phonon structure of the damaged layer is that of the typical amorphous Si. After irradiation by pulsed laser(10ns,532nm) at energy density of approximately 0.1J/cm2, a Raman peak appears at a frequency between 508 cm−1 and 517 cm−1 depending on implant dosage. The higher the implant dosage, the lower is the frequency. We explain this in terms of the residual bonding defects caused by the presence of extraneous atoms such as oxygen. On the other hand, irradiation at an energy density in excess of 0.5 J/cm2, a Raman peak appears at a frequency close to that of the single crystal except for small shifts due to Fano-shift. For implant dosage in excess of 4×1016 As/cm2 , we have found additional peaks at 222 cm−1 and 267 cm−1 which are close to the metallic arsenic modes indicating the presence of arsenic clusters.

Nanoindentation Characterization of Single-Crystal Silicon With Oxide Film

2021 ◽  
Author(s):  
Lianmin Yin ◽  
Yifan Dai ◽  
Hao Hu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Oxide Film ◽  
Single Crystal ◽  
Deformation Zone ◽  
Single Crystal Silicon ◽  
Plastic Deformation Zone ◽  
Crystal Silicon ◽  
Ultra Precision

Abstract In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an accurate study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. It is found that pop-in events appear in the theoretical elastic domain of single-crystal silicon due to the presence of oxide films, which directly leads the single crystal silicon from the elastic deformation zone into the plastic deformation zone. In addition, the mechanical properties of single-crystal silicon are more accurately measured after it has entered the full plastic deformation.

Characterization of recrystallized depth and dopant distribution in laser recovery of grinding damage in single-crystal silicon

2018 ◽  
Vol 82 ◽  
pp. 54-61 ◽  
Author(s):  
Keiichiro Niitsu ◽  
Yu Tayama ◽  
Taketoshi Kato ◽  
Hidenobu Maehara ◽  
Jiwang Yan
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Dopant Distribution ◽  
Crystal Silicon

Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration

1998 ◽  
Vol 64 (1) ◽  
pp. 87-93 ◽  
Author(s):  
Kazuo Sato ◽  
Mitsuhiro Shikida ◽  
Yoshihiro Matsushima ◽  
Takashi Yamashiro ◽  
Kazuo Asaumi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Oxidation Effects During the Formation of Buried Sb Dopant Profiles in Silicon Using Pulsed Laser Epitaxy

1991 ◽  
Vol 235 ◽  
Author(s):  
Randall J. Carolissen ◽  
R. Pretorius
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Oxidation Kinetics ◽  
Ruby Laser ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Heating Time ◽  
No Oxidation ◽  
Crystal Silicon ◽  
Oxygen Concentrations

ABSTRACTSevere oxidation inhibited epitaxy when buried Sb profiles in single crystal silicon were formed from evaporated layers irradiated in atmosphere with a pulsed Q-switched ruby laser. Oxygen concentrations as high as 5×1017atoms/cm2 (equivalent to 105nm SiO2) were measured. However, structures prepared without the Sb layer and irradiated under identical conditions, showed no oxidation. Oxidation of Sb as a source of the measured oxygen was ruled out, while the total heating time during laser irradiation is so short (nano- to milliseconds) that normal oxidation kinetics cannot account for the amount of SiO2 measured. Irradiations in vacuum and in a helium ambient showed that the oxygen responsible for these effects is supplied from the ambient in which irradiations are carried out. Also no oxidation was observed when structures, prepared on a substrate heated to 350°C, were irradiated in atmosphere. A model to account for these oxidation effects is proposed.

scholarly journals Crystallographic Characterization of Surface Damage in Diamond-Turned Single-Crystal Silicon.

1999 ◽  
Vol 65 (7) ◽  
pp. 992-996
Author(s):  
Takayuki SHIBATA ◽  
Shigeru FUJII ◽  
Atsushi ONO ◽  
Eiji MAKINO
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Surface Damage ◽  
Crystal Silicon
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