scholarly journals Kinetics of Molecular Beam Epitaxy: Effect of Ion-Induced Sputtering

1990 ◽  
Vol 202 ◽  
Author(s):  
Peter M. Richards
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Binding Energy ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam ◽  
Ion Beam ◽  
Kinetics Of

ABSTRACTSteady state roughness of surfaces growing by molecular beam epitaxy is investigated by Monte Carlo simulations under conditions where an ion beam is also present which sputters adatoms off the surface. If the sputtering is random, it only increases the roughness. But if the sputtering probability is strongly dependent on the binding energy of an adatom within a cluster or island, the ions can have a smoothening effect. Physical arguments are given in support of the results.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Molecular beam measurements and Monte Carlo simulations of the kinetics of N2O decomposition on Rh(111) single-crystal surfaces

2006 ◽  
Vol 125 (7) ◽  
pp. 074705 ◽  
Author(s):  
Rodolfo Omar Uñac ◽  
Victor Bustos ◽  
Jarod Wilson ◽  
Giorgio Zgrablich ◽  
Francisco Zaera
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Single Crystal ◽  
Molecular Beam ◽  
N2o Decomposition ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Kinetics Of

Effects of Hydrogen on Nucleation of Islands During Si(001) Mbe Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
Kazuki Mizushima ◽  
Pavel Šmilauer ◽  
Dimitri D. Vvedensky
Keyword(s):  
Monte Carlo ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
High Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Temperature Range ◽  
Kinetic Monte Carlo Simulations

AbstractKinetic Monte Carlo simulations with two species (Si and H) have been performed to identify the mechanism behind the H-induced creation of a strongly temperature-dependent high density of Si islands in the temperature range of 300–550 K during molecular-beam epitaxy on Si(001) surface. A model is proposed to explain this effect as a result of an activated exchange between H and Si at Si island edges.

Anomalous Kinetics of the Trapping Reaction in One Dimension Under Steady State Conditions

1995 ◽  
Vol 407 ◽  
Author(s):  
Anna L. Lin ◽  
Raoul Kopelman
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Monte Carlo Simulations ◽  
Reaction Rate ◽  
Particle Density ◽  
Self Organization ◽  
One Dimension ◽  
Algebraic Decay ◽  
Kinetic Rate ◽  
Kinetics Of

ABSTRACTWe study the A + B→B trapping reaction under steady state conditions for the case in which both A particles and traps(B) are mobile. Using Monte Carlo simulations, we follow the kinetic rate law in one dimension. Anomalies arise due to self-organization of the A particles, which results in a slower steady state reaction rate than is predicted classically. We find a partial order of reaction with respect to trap density of X = 2, and an overall order for the reaction of Z = 3.2. These results are in agreement with other works which predict an exponential rather than an algebraic decay law with respect to the A particle density.

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