Peculiar Doping Behavior of Si:Be.
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ABSTRACTThe total energies and structures of a number of Be-induced defects in Si are investigated using ab-initio local density calculations. Our primary results are: 1) The geometry of the isoelectronic center is found to correspond to a [111] substitutionalinterstitial pair (SIP); 2) The low energy defect spectrum includes large Be complexes containing at least one substitutional atom; and 3) Simple bonding rules exist for the stability of the different types of bonds in the material. Thus the Si-Be bond is found to be stable for all defect configurations while the Be-Be bond is metastable.
1988 ◽
Vol 46
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pp. 506-507
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2020 ◽
Vol 37
(3)
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pp. 83-90
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2019 ◽
Vol 14
(3)
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pp. 211-225
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1996 ◽
Vol 118
(23)
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pp. 5408-5411
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2013 ◽
Vol 138
(9)
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pp. 094317
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