Rapid Thermal Processing and Properties of Sol-Gel Derived Ferroelectric Thin-Films for Non-Volatile Memories.

1991 ◽  
Vol 224 ◽  
Author(s):  
C. K. Barlingay ◽  
S. K Dey
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
High Field ◽  
Growth Habit ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Field Measurements ◽  
Ferroelectric Thin Films ◽  
Columnar Growth ◽  
Ferroelectric Switching

AbstractFerroelectric Pb(Zr0.52Ti0.48)O3 or PZT (52/48) thin-films (0.5 μm) were integrated onto Pt passivated Si wafers (3–4 inches) by polymeric solgel processing followed by rapid thermal annealing. Dense and crack-free perovskite microstructures were obtained by densification of the amorphous gel-matrix prior to crystallization. The films exhibited submicron grains (0.2–0.6 μm) with a columnar growth habit. High field measurements on thin-films determined Pr, Psp, and Ec in the ranges of 29–32 μC/cm2. 44–58 μC/cm2, and 50–60 kV/cm, respectively, and ferroelectric switching times below 3 ns.

Rapid thermal processing of zirconia thin films produced by the sol‐gel method

1991 ◽  
Vol 70 (4) ◽  
pp. 2348-2352 ◽  
Author(s):  
R. Pascual ◽  
M. Sayer ◽  
C. V. R. Vasant Kumar ◽  
Lichun Zou
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Gel Method ◽  
Sol Gel Method

Rapid Thermal Processing of Ferroelectric Thin Films

1991 ◽  
Vol 224 ◽  
Author(s):  
Zheng Wu ◽  
Roberto Pascual ◽  
C.V.R. Vasant Kumar ◽  
David Amd ◽  
Michael Sayer
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Crystallization Behavior ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Heating Rates ◽  
Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

Chemical and Structural Evolution of Sol-Gel-Derived Hydroxyapatite Thin Films under Rapid Thermal Processing

1996 ◽  
Vol 79 (4) ◽  
pp. 837-842 ◽  
Author(s):  
Stephen W. Russell ◽  
Karen A. Luptak ◽  
Carlos Tres A. Suchicital ◽  
Terry L. Alford ◽  
Vincent B. Pizziconi
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Structural Evolution

Rapid thermal processing of lithium tantalite thin films prepared by a diol-based sol–gel process

2004 ◽  
Vol 79 (1) ◽  
pp. 103-108 ◽  
Author(s):  
M.C. Kao ◽  
H.Z. Chen ◽  
C.M. Wang ◽  
Y.C. Chen ◽  
M.S. Lee
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Sol Gel Process

Low-temperature ultraviolet sol-gel photoannealing processing of multifunctional lead-titanate-based thin films

2007 ◽  
Vol 22 (7) ◽  
pp. 1824-1833 ◽  
Author(s):  
M.L. Calzada ◽  
I. Bretos ◽  
R. Jiménez ◽  
H. Guillon ◽  
J. Ricote ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Lead Titanate ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Hysteresis Loops ◽  
Relaxor Ferroelectric ◽  
Silicon Substrates ◽  
Ferroelectric Hysteresis

(Pb1−xCax)TiO3 perovskite thin films with nominal compositions of (Pb0.76Ca.24)TiO3 (ferroelectric) and (Pb0.50Ca0.50)TiO3 (relaxor-ferroelectric) were prepared on silicon substrates at low temperatures compatible with those used in Si-technology. The technique used for the processing of these films was ultraviolet (UV) sol-gel photoannealing, using photo-sensitive precursor solutions and UV-assisted rapid thermal processing. The UV-irradiation and thermal treatment of the solution-derived films (gel films) were carried out in air or in oxygen. In both cases, the formation of the perovskite occurred at the same temperature, and this temperature increased as the Ca2+ content increased. Thus, full-perovskite films of (Pb0.76Ca.24)TiO3 were obtained at 723 K whereas those of (Pb0.50Ca0.50)TiO3 were formed at 773 K. Well-defined ferroelectric hysteresis loops were measured in the (Pb0.76Ca.24)TiO3 films, with values of remanent polarization of Pr ∼ 11 μC cm−2 and coercive fields for the films processed in oxygen lower than those of the films processed in air, Ec ∼ 164 and ∼226 kV.cm−1, respectively. These films showed a ferro-paraelectric transition at close temperatures of Tmax ∼ 605 K, although with higher values of the permittivity for the film processed in oxygen, k ∼ 567 at 10 kHz. The (Pb0.50Ca.50)TiO3 films had a diffuse ferro-paraelectric transition with a relaxor-like character, also with higher k values for the films prepared in oxygen, k ∼ 179 at Tmax ∼ 20 K. The possible use of these materials in silicon integrated multifunctional devices is discussed in this paper.

Rapid thermal processing of PZT thin films using a new triol based sol-gel route

1999 ◽  
Vol 228 (1) ◽  
pp. 61-78 ◽  
Author(s):  
S. Arscott ◽  
R. E. Miles ◽  
S. J. Milne
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Pzt Thin Films

Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

1999 ◽  
Vol 14 (2) ◽  
pp. 494-499 ◽  
Author(s):  
S. Arscott ◽  
R. E. Miles ◽  
J. D. Kennedy ◽  
S. J. Milne
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Si Substrates ◽  
Pzt Film ◽  
Gaas Substrates

0.53Ti0.47)O3 have been prepared on platinized GaAs (Pt–GaAs) substrates using a new 1,1,1-tris(hydroxymethyl)ethane (THOME) based sol-gel technique. Rapid thermal processing (RTP) techniques were used to decompose the sol-gel layer to PZT in an effort to avoid problems of GayAs outdiffusion into the PZT. A crystalline PZT film was produced by firing the sol-gel coatings at 600 or 650 ° for a dwell time of 1 s using RTP. A single deposition of the precursor sol resulted in a 0.4 μm thick PZT film. X-ray diffraction measurements revealed that the films possessed a high degree of (111) preferred orientation. Measured average values of remanent polarization (Pr ) and coercive field (Ec) for the film annealed at 650 ° for 1 s were 24 μC/cm2 and 32 kV/cm, respectively, together with a low frequency dielectric constant and loss tangent at 1 kHz of 950 and 0.02. These values are comparable to those obtainable on platinized silicon (Pt–Si) substrates using conventional sol-gel methods, and are an improvement on PZT thin films prepared on platinized GaAs using an earlier sol-gel route based on 1,3-propanediol.

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