Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

0.53Ti0.47)O3 have been prepared on platinized GaAs (Pt–GaAs) substrates using a new 1,1,1-tris(hydroxymethyl)ethane (THOME) based sol-gel technique. Rapid thermal processing (RTP) techniques were used to decompose the sol-gel layer to PZT in an effort to avoid problems of GayAs outdiffusion into the PZT. A crystalline PZT film was produced by firing the sol-gel coatings at 600 or 650 ° for a dwell time of 1 s using RTP. A single deposition of the precursor sol resulted in a 0.4 μm thick PZT film. X-ray diffraction measurements revealed that the films possessed a high degree of (111) preferred orientation. Measured average values of remanent polarization (Pr ) and coercive field (Ec) for the film annealed at 650 ° for 1 s were 24 μC/cm2 and 32 kV/cm, respectively, together with a low frequency dielectric constant and loss tangent at 1 kHz of 950 and 0.02. These values are comparable to those obtainable on platinized silicon (Pt–Si) substrates using conventional sol-gel methods, and are an improvement on PZT thin films prepared on platinized GaAs using an earlier sol-gel route based on 1,3-propanediol.

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Rapid Thermal Processing of Ferroelectric Thin Films

MRS Proceedings ◽

10.1557/proc-224-305 ◽

1991 ◽

Vol 224 ◽

Cited By ~ 10

Author(s):

Zheng Wu ◽

Roberto Pascual ◽

C.V.R. Vasant Kumar ◽

David Amd ◽

Michael Sayer

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Thermal Processing ◽

Crystallization Behavior ◽

Sol Gel ◽

Rapid Thermal Processing ◽

Lead Zirconate ◽

Dielectric Constants ◽

Heating Rates ◽

Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

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Fabrication of Thick, Sol Gel Pzt Films: Applications to Macroscopic Piezoelectric Devices

MRS Proceedings ◽

10.1557/proc-360-103 ◽

1994 ◽

Vol 360 ◽

Cited By ~ 3

Author(s):

D.A. Barrow ◽

T.E. Petroff ◽

M. Sayer

Keyword(s):

Lead Zirconate Titanate ◽

Sol Gel ◽

Low Frequency ◽

Lead Zirconate ◽

Resonant Vibrations ◽

Pzt Film ◽

Sol Gel Process ◽

Pzt Films ◽

High Frequency Resonance ◽

Piezoelectric Devices

AbstractLead zirconate titanate (PZT) films of up to 60 μm in thickness have been fabricated on a wide variety of substrates using a new sol gel process. The dielectric properties (∈ = 900), ferroelectric (Ec = 16 kV/cm and Pr = 35 μC/cm 2) and piezoelectric properties are comparable to bulk values. The characteristic Curie point of these films is at 420 °C. Piezoelectric actuators have been developed by depositing thick PZT films on both planar and coaxial substrates. Stainless steel cantilevers and optical fibres coated with a PZT film exhibit flexure mode resonant vibrations observable with the naked eye. A low frequency in-line fibre optic modulator has been developed using a PZT coated optical fibre. The high frequency resonance of a 60 μm film on a aluminum substrate has been observed.

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(001)-Oriented LaNiO3 Bottom Electrodes and (001)-Textured Ferroelectric Thin Films on LaNiO3

MRS Proceedings ◽

10.1557/proc-596-73 ◽

1999 ◽

Vol 596 ◽

Cited By ~ 4

Author(s):

Zhenshan Zhang ◽

Jeong Hwan Park ◽

Susan Trolier-McKinstry

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Metallic Oxide ◽

Working Pressure ◽

Si Substrates ◽

Oxide Electrodes ◽

Pzt Films ◽

Deposited Films

AbstractIn this work, highly (001)pc-oriented thin films of LaNiO3 (LNO) were deposited by DC magnetron sputtering onto Si substrates (pc = pseudocubic indices). The target powder was prepared using a molten salt technique with Na2CO3 as a flux. The final target density was greater than 85% of theoretical density. The best results were obtained when sputtering was carried out at a power of 186 W and a working pressure of 45 mtorr with a gas composition of 50% O2 + 50% Ar. The thickness of the deposited films was proportional to the sputtering time, and the growth rate was 300Å/hour. Highly (001)-oriented thin films of lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) and Pb[(Mg1/3Nb2/3)0.7Ti0.3]O3 (PMN-PT) were fabricated by a sol-gel method on (001)-textured LNO metallic oxide electrodes. A remanent polarization of 12 μC/cm2 and d31 of -125 pC/N (assuming a Young's modulus of 35 GPa) were measured on the PMN-PT thin films with a thickness of 0.9 μm. This piezoelectric coefficient considerably exceeds that available from PZT films, and depends critically on the film orientation. Changes in the hysteresis loop due to externally applied stress will also be described.

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Optimization of Thermal Processing and Chemistry in the Fabrication of a PZT Based Mems Power Generator

MRS Proceedings ◽

10.1557/proc-718-d10.25 ◽

2002 ◽

Vol 718 ◽

Cited By ~ 1

Author(s):

B.W. Olson ◽

J.L. Skinner ◽

C.D. Richards ◽

R.F. Richards ◽

D.F. Bahr

Keyword(s):

Lead Zirconate Titanate ◽

Thermal Processing ◽

Fatigue Behavior ◽

Ferroelectric Properties ◽

Sol Gel ◽

Lead Zirconate ◽

Structure Property ◽

Power Generator ◽

Structure Property Relationships ◽

Pzt Film

AbstractThin films of lead zirconate titanate (PZT) are currently being used in a novel MEMS device to generate power. A piezoelectric stack consisting of platinum/PZT/gold is deposited by sputtering, spin coating, and subsequent heat treatments onto a thin silicon membrane, which is cyclically polarized by a flexing motion. The membrane must withstand strains between 0.1% and 0.5% for several billion cycles to provide a useful device. This study has examined the processing-structure-property relationships in developing the PZT film for use in this device. In the sol-gel deposition of PZT, pyrolysis and crystallization temperatures have been shown to alter both microstructure and properties of the piezoelectric film. The chemistry of the PZT film has also been tailored to increase piezoelectric output for this device. Ferroelectric properties are compared to the piezoelectric outputs, and fatigue behavior is measured on bulk silicon and on membranes.

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Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on LaNiO3 /SiO2 /Si Substrates

Journal of the American Ceramic Society ◽

10.1111/jace.12066 ◽

2012 ◽

Vol 96 (1) ◽

pp. 90-95 ◽

Cited By ~ 9

Author(s):

Y. N. Chen ◽

Z. J. Wang

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Gel Method ◽

Sol Gel Method ◽

Si Substrates ◽

Microwave Annealing ◽

Zirconate Titanate

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Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.280-283.239 ◽

2007 ◽

Vol 280-283 ◽

pp. 239-242 ◽

Cited By ~ 1

Author(s):

Wen Gong ◽

Xiang Cheng Chu ◽

Jing Feng Li ◽

Zhi Lun Gui ◽

Long Tu Li

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Silicon Wafers ◽

Seeding Layer ◽

Pzt Thin Films ◽

Pzt Film ◽

Sol Gel Process ◽

Pzt Films

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

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Orientation control of sol-gel-derived lead zirconate titanate film by addition of polyvinylpyrrolidone

Journal of Materials Research ◽

10.1557/jmr.2005.0109 ◽

2005 ◽

Vol 20 (4) ◽

pp. 882-888 ◽

Cited By ~ 14

Author(s):

Gun-Tae Park ◽

Chee-Sung Park ◽

Jong-Jin Choi ◽

Hyoun-Ee Kim

Keyword(s):

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Organic Residues ◽

Si Substrates ◽

Pzt Film ◽

Oriented Film ◽

Zirconate Titanate ◽

Nucleation Sites ◽

Pzt Films

Highly (100)- and (111)-oriented lead zirconate titanate (PZT) films with a thickness of 350 nm were deposited on platinized Si substrates through a single spinning of a PZT sol containing polyvinylpyrrolidone (PVP) as an additive. The crystallographic orientation of the film was strongly influenced by pyrolysis conditions after spin coating. When the spin-coated sol was pyrolyzed at temperatures above 320 °C for relatively long periods of time (>5 min), (111)-oriented film was formed after annealing at 700 °C for 10 min. On the other hand, when the same sol was pyrolyzed at 320 °C for short periods of time (<5 min), the film was strongly oriented to the (100) direction after annealing. Organic residues derived from PVP decomposition acted as nucleation sites for the (100) oriented grains during annealing after the pyrolysis. The effective d33 of the (100)-oriented PZT film (100 pC/N) was much higher than that of the (111)-oriented film (62 pC/N) with the same thickness.

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Rapid Thermal Processing and Crystallization Kinetics in Lead Zirconate Titanate (PZT) Thin Films

MRS Proceedings ◽

10.1557/proc-361-389 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 11

Author(s):

E.M. Griswold ◽

L. Weaver ◽

I.D. Calder ◽

M. Sayer

Keyword(s):

Crystallization Kinetics ◽

Lead Zirconate Titanate ◽

Thermal Processing ◽

Sol Gel ◽

Rapid Thermal Processing ◽

Depth Profiling ◽

Lead Zirconate ◽

Zirconate Titanate ◽

Transmission Electron ◽

Sol Gel Process

ABSTRACTRapid thermal processing (RTP) has been used to examine the crystallization kinetics of lead zirconate titanate (PZT) fabricated using a sol gel process. Depth profiling of PZT films was performed with glancing angle x-ray diffraction and transmission electron microscopy. The films were annealed using RTP ramp rates from 10°C/s to 200°C/s and hold temperatures from 525°C to 650°C. The effect of ramp rate on the phase transformation is presented, and the growth of oriented columnar structures is demonstrated. Films subjected to RTP at 650°C for 1s using a ramp of 10°C/s began to transform to perovskite and were ferroelectric while a ramp of 100°C/s (same hold) produced a linear material which was pyrochlore. Longer hold conditions such as 650°C for 30s produced ferroelectric films with Pr in excess of 20μC/cm2 and relative permittivities ε > 600.

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Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

MRS Proceedings ◽

10.1557/proc-830-d3.3 ◽

2004 ◽

Vol 830 ◽

Author(s):

Hiroshi Nakaki ◽

Hiroshi Uchida ◽

Shoji Okamoto ◽

Shintaro Yokoyama ◽

Hiroshi Funakubo ◽

...

Keyword(s):

Thin Films ◽

Rare Earth ◽

Lead Zirconate Titanate ◽

Ferroelectric Property ◽

Ferroelectric Properties ◽

Lead Zirconate ◽

Crystal Anisotropy ◽

Pzt Film ◽

Zirconate Titanate ◽

Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

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