Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

2014 ◽  
Vol 104 (9) ◽  
pp. 092113 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Yoshitaka Taniyasu ◽  
Shin-ichi Karimoto ◽  
Yoshiharu Krockenberger ◽  
Hideki Yamamoto
1990 ◽  
Vol 99 (1-4) ◽  
pp. 451-454 ◽  
Author(s):  
Yoshitaka Tomomura ◽  
Masahiko Kitagawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima

1976 ◽  
Vol 15 (6) ◽  
pp. 1001-1007 ◽  
Author(s):  
Takafumi Yao ◽  
Satoru Amano ◽  
Yunosuke Makita ◽  
Shigeru Maekawa

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.


1989 ◽  
Vol 160 ◽  
Author(s):  
R.P. Burns ◽  
Y.H. Lee ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
M.J. Mantini ◽  
...  

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.


1991 ◽  
Vol 235 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier

ABSTRACTBoron nitride thin films were grown using ion beam assisted deposition. Boron metal was evaporated, and the depositing film was bombarded by nitrogen and argon ions. The films were characterized using Fourier transform infrared spectroscopy, electron diffraction, transmission electron microscopy, and Rutherford backscattering. The thin films were found to be cubic boron nitride, consisting of 100–200 Å crystallites with a small amount of an amorphous secondary phase. The best conditions for depositing cubic boron nitride were found to be a substrate temperature of 400°C, bombardment by a 50:50 mixture of argon and nitrogen with a bombarding ion energy of 500 eV and a ratio of bombarding ions to depositing boron atoms of from 1.0 to 1.5 ions per atom.


1995 ◽  
Vol 384 ◽  
Author(s):  
P.A.A. Van Der Heijden ◽  
J.J. Hammink ◽  
PJ.H. Bloemen ◽  
R.M. Wolf ◽  
M.G. Van Opstal ◽  
...  

ABSTRACTCoherent epitaxial Fe3O4 layers in the range of 0 to 400 Å have been grown by molecular beam epitaxy on single crystal MgO(100) substrates. The magnetic properties were studied by local magneto-optical Kerr effect experiments on a wedge shaped Fe3O4 layer, by ferromagnetic resonance and SQUID. The results show that the magnetic behavior of the Fe3O4 thin films resembles bulk Fe3O4 in the investigated thickness range.


Sign in / Sign up

Export Citation Format

Share Document