Removable External Seeding for Solid phase Epitaxy of Amorphous Silicon on Glass Substrates
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ABSTRACTA new method for obtaining a planar silicon film on glass substrates (SOG) with controlled crystal orientation has been introduced. This technique uses solid phase epitaxy (SPE) with external seed to fabricate the orientation-controlled SOG structure. Heat treatment of amorphous SOG substrate in contact with mesa striped Si seed crystal was performed at 540°C for 16 hours to form the SPE layer. The planar surface of the SOG structure is due to the most important feature of the present technique-the separation of the seed from the substrate after SPE.
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1984 ◽
Vol 49
(5)
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pp. 471-479
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Keyword(s):
1995 ◽
Vol 96
(1-2)
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pp. 261-264
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2011 ◽
Vol 81
(3)
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pp. 283-290
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