A Comparison Between Dry Etching with an Electron Cyclotron Resonance Source and Reactive Ion Etching for GaAs and InP

1991 ◽  
Vol 240 ◽  
Author(s):  
S. W. Pang
Keyword(s):  
Cyclotron Resonance ◽  
Parallel Plate ◽  
Electron Cyclotron Resonance ◽  
Reactive Ion Etching ◽  
Electron Cyclotron ◽  
Gas Composition ◽  
Rf Power ◽  
Ion Etching ◽  
Plate System ◽  
Ecr Source

ABSTRACTEtching with an electron cyclotron resonance (ECR) source provides several advantages over conventional reactive ion etching (RIE). In this work, the results of GaAs and InP etching using a multipolar ECR source are presented and compared to RIE. The effects of microwave and rf power, gas composition, pressure, and source to sample distance on the etch characteristics of GaAs and InP were evaluated. Three different etch gases were used including CCl2F2, BCl3, and Cl2. The influence of microwave power on etch characteristics is compared to conventional parallel plate system using rf power alone.

Low Temperature Silicon Oxidation With Electron Cyclotron Resonance Oxygen Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
K. T. Sung ◽  
S. W. Pang
Keyword(s):  
Low Temperature ◽  
Microwave Power ◽  
Cyclotron Resonance ◽  
Oxygen Plasma ◽  
Permanent Magnets ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Rf Power ◽  
Source Distance ◽  
Ecr Source

ABSTRACTSilicon was oxidized at low temperature with an oxygen plasma generated by an electron cyclotron resonance (ECR) source. The ECR source utilized a multicusp magnetic field formed by permanent magnets. Microwave power at 2.45 GHz was applied to the source and if power at 13.56 MHz was applied to the sample stage. Si oxidation was studied as a function of source distance, pressure, microwave power, and rf power. The oxide thickness increases with microwave and rf power but decreases with source distance. The oxidation rate increases with pressure up to 12 mTorr, men decreases at higher pressure. The relative emission intensities in the plasma monitored using optical emission spectroscopy showed similar dependence on the source distance and microwave power. Oxidation temperature was estimated to be <100°C. Using ellipsometry and X-ray photoelectron spectroscopy, the oxidized films were found to be close to that of thermal oxide with refractive index at 1.45 and oxygen to silicon ratio of 2. From the current-voltage and capacitance-voltage measurements, the breakdown fields of these oxide films were 6.3 MV/cm and the fixed charge densities were 7×1010 cm−2.

Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2with Constant Ar Flow

2003 ◽  
Vol 42 (Part 1, No. 6B) ◽  
pp. 3958-3961 ◽  
Author(s):  
Nobuo Haneji ◽  
Goh Segami ◽  
Tomoyoshi Ide ◽  
Tatsuya Suzuki ◽  
Taro Arakawa ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Reactive Ion Etching ◽  
Electron Cyclotron ◽  
Ion Etching ◽  
Cyclic Injection

Optical properties of modulation‐doped quantum wires fabricated by electron cyclotron resonance reactive ion etching

1993 ◽  
Vol 63 (2) ◽  
pp. 237-239 ◽  
Author(s):  
J. S. Weiner ◽  
J. M. Calleja ◽  
A. Pinczuk ◽  
A. Schmeller ◽  
B. S. Dennis ◽  
...  
Keyword(s):  
Optical Properties ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Quantum Wires ◽  
Reactive Ion Etching ◽  
Electron Cyclotron ◽  
Ion Etching

Photoreflectance Characterization of Etch-Induced Damage in Dry Etched GaAs

1993 ◽  
Vol 324 ◽  
Author(s):  
O.J. Glembocki ◽  
J.A. Tuchman ◽  
K.K. Ko ◽  
S.W. Pang ◽  
A. Giordana ◽  
...  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Microwave Power ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Rf Power ◽  
Level Shifts ◽  
Ecr Source

AbstractPhotoreflectance has been used to characterize the etch-induced damage in GaAs processed in an Ar/Cl2 plasma generated by an electron-cyclotron resonance (ECR) source. We show that the damage is localized to the surface and that it is most influenced by the RF power, with little effect from the microwave power. The Fermi-level is observed to be unchanged in n-GaAs and remains near midgap, while for p-GaAs, the Fermi level shifts from near the valence band to midgap. Etch-induced anisite defects are proposed as a possible source of the damage.

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