Reactive ion etching lag investigation of oxide etching in fluorocarbon electron cyclotron resonance plasmas

1994 ◽  
Vol 12 (4) ◽  
pp. 1957-1961 ◽  
Author(s):  
O. Joubert ◽  
G. S. Oehrlein ◽  
M. Surendra ◽  
Y. Zhang
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Reactive Ion Etching ◽  
Electron Cyclotron ◽  
Ion Etching ◽  
Oxide Etching

Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2with Constant Ar Flow

2003 ◽  
Vol 42 (Part 1, No. 6B) ◽  
pp. 3958-3961 ◽  
Author(s):  
Nobuo Haneji ◽  
Goh Segami ◽  
Tomoyoshi Ide ◽  
Tatsuya Suzuki ◽  
Taro Arakawa ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Reactive Ion Etching ◽  
Electron Cyclotron ◽  
Ion Etching ◽  
Cyclic Injection

Optical properties of modulation‐doped quantum wires fabricated by electron cyclotron resonance reactive ion etching

1993 ◽  
Vol 63 (2) ◽  
pp. 237-239 ◽  
Author(s):  
J. S. Weiner ◽  
J. M. Calleja ◽  
A. Pinczuk ◽  
A. Schmeller ◽  
B. S. Dennis ◽  
...  
Keyword(s):  
Optical Properties ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Quantum Wires ◽  
Reactive Ion Etching ◽  
Electron Cyclotron ◽  
Ion Etching

A Comparison Between Dry Etching with an Electron Cyclotron Resonance Source and Reactive Ion Etching for GaAs and InP

1991 ◽  
Vol 240 ◽  
Author(s):  
S. W. Pang
Keyword(s):  
Cyclotron Resonance ◽  
Parallel Plate ◽  
Electron Cyclotron Resonance ◽  
Reactive Ion Etching ◽  
Electron Cyclotron ◽  
Gas Composition ◽  
Rf Power ◽  
Ion Etching ◽  
Plate System ◽  
Ecr Source

ABSTRACTEtching with an electron cyclotron resonance (ECR) source provides several advantages over conventional reactive ion etching (RIE). In this work, the results of GaAs and InP etching using a multipolar ECR source are presented and compared to RIE. The effects of microwave and rf power, gas composition, pressure, and source to sample distance on the etch characteristics of GaAs and InP were evaluated. Three different etch gases were used including CCl2F2, BCl3, and Cl2. The influence of microwave power on etch characteristics is compared to conventional parallel plate system using rf power alone.

Mechanism of Reactive Ion Etching Lag inWSi2Etching Using Electron Cyclotron Resonance Plasma

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2170-2174 ◽  
Author(s):  
Takahiro Maruyama ◽  
Nobuo Fujiwara ◽  
Masahiro Yoneda ◽  
Katsuhiro Tsukamoto ◽  
Toshinobu Banjo
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Reactive Ion Etching ◽  
Electron Cyclotron ◽  
Ion Etching ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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