Electron cyclotron resonance-reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH/sub 4//H/sub 2//Ar and O/sub 2/ with constant Ar flow

Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference ◽

10.1109/imnc.2003.1268780 ◽

2004 ◽

Author(s):

N. Haneji ◽

T. Ide ◽

Y. Awa ◽

T. Arakawa ◽

K. Tada ◽

...

Keyword(s):

Cyclotron Resonance ◽

Multilayer Structure ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

Ion Etching ◽

Cyclic Injection

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Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2with Constant Ar Flow

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.3958 ◽

2003 ◽

Vol 42 (Part 1, No. 6B) ◽

pp. 3958-3961 ◽

Author(s):

Nobuo Haneji ◽

Goh Segami ◽

Tomoyoshi Ide ◽

Tatsuya Suzuki ◽

Taro Arakawa ◽

...

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

Ion Etching ◽

Cyclic Injection

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Electron cyclotron resonance-reactive ion etching of III-V semiconductors by cyclic injection of CH/sub 4//H/sub 2//Ar and O/sub 2/

2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. ◽

10.1109/imnc.2002.1178548 ◽

2003 ◽

Author(s):

N. Haneji ◽

G. Segami ◽

T. Suzuki ◽

T. Arakawa ◽

K. Tada ◽

...

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

Ion Etching ◽

Cyclic Injection

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Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH4/H2/Ar and O2with Constant Ar Flow

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.5819 ◽

2005 ◽

Vol 44 (7B) ◽

pp. 5819-5823 ◽

Author(s):

Taro Arakawa ◽

Yoshiki Awa ◽

Tomoyoshi Ide ◽

Nobuo Haneji ◽

Kunio Tada ◽

...

Keyword(s):

Surface Morphology ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

Ion Etching ◽

Etched Surface ◽

Cyclic Injection

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Electron cyclotron resonance reactive ion etching of fine features in HgxCd1−xTe using CH4/H2 plasmas

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578421 ◽

1993 ◽

Vol 11 (4) ◽

pp. 1763-1767 ◽

Author(s):

C. R. Eddy ◽

E. A. Dobisz ◽

J. R. Meyer ◽

C. A. Hoffman

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

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Effect ofN2Addition on Aluminum Alloy Etching by Electron Cyclotron Resonance Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.2147 ◽

1995 ◽

Vol 34 (Part 1, No. 4B) ◽

pp. 2147-2151 ◽

Author(s):

Yoshihiro Kusumi ◽

Nobuo Fujiwara ◽

Junko Matsumoto ◽

Masahiro Yoneda

Keyword(s):

Aluminum Alloy ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

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Optical properties of modulation‐doped quantum wires fabricated by electron cyclotron resonance reactive ion etching

Applied Physics Letters ◽

10.1063/1.110352 ◽

1993 ◽

Vol 63 (2) ◽

pp. 237-239 ◽

Author(s):

J. S. Weiner ◽

J. M. Calleja ◽

A. Pinczuk ◽

A. Schmeller ◽

B. S. Dennis ◽

...

Keyword(s):

Optical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Quantum Wires ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

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Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578850 ◽

1994 ◽

Vol 12 (3) ◽

pp. 665-670 ◽

Author(s):

O. Joubert ◽

G. S. Oehrlein ◽

M. Surendra

Keyword(s):

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

High Density ◽

Ion Etching ◽

Lag Model ◽

Resonance Plasma ◽

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Effects of bias frequency on reactive ion etching lag in an electron cyclotron resonance plasma etching system

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580702 ◽

1997 ◽

Vol 15 (3) ◽

pp. 664-667 ◽

Author(s):

Hyun-Ho Doh ◽

Chung-Kyu Yeon ◽

Ki-Woong Whang

Keyword(s):

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

Ion Etching ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma ◽

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Reactive ion etching lag investigation of oxide etching in fluorocarbon electron cyclotron resonance plasmas

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578989 ◽

1994 ◽

Vol 12 (4) ◽

pp. 1957-1961 ◽

Author(s):

O. Joubert ◽

G. S. Oehrlein ◽

M. Surendra ◽

Y. Zhang

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

Ion Etching ◽

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A Comparison Between Dry Etching with an Electron Cyclotron Resonance Source and Reactive Ion Etching for GaAs and InP

MRS Proceedings ◽

10.1557/proc-240-273 ◽

1991 ◽

Vol 240 ◽

Author(s):

S. W. Pang

Keyword(s):

Cyclotron Resonance ◽

Parallel Plate ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

Gas Composition ◽

Rf Power ◽

Ion Etching ◽

Plate System ◽

ABSTRACTEtching with an electron cyclotron resonance (ECR) source provides several advantages over conventional reactive ion etching (RIE). In this work, the results of GaAs and InP etching using a multipolar ECR source are presented and compared to RIE. The effects of microwave and rf power, gas composition, pressure, and source to sample distance on the etch characteristics of GaAs and InP were evaluated. Three different etch gases were used including CCl2F2, BCl3, and Cl2. The influence of microwave power on etch characteristics is compared to conventional parallel plate system using rf power alone.

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