Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma

1994 ◽  
Vol 12 (3) ◽  
pp. 665-670 ◽  
Author(s):  
O. Joubert ◽  
G. S. Oehrlein ◽  
M. Surendra
Keyword(s):  
Silicon Dioxide ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Reactive Ion Etching ◽  
Electron Cyclotron ◽  
High Density ◽  
Ion Etching ◽  
Lag Model ◽  
Resonance Plasma ◽  
Density Plasma

Mechanism of Reactive Ion Etching Lag inWSi2Etching Using Electron Cyclotron Resonance Plasma

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2170-2174 ◽  
Author(s):  
Takahiro Maruyama ◽  
Nobuo Fujiwara ◽  
Masahiro Yoneda ◽  
Katsuhiro Tsukamoto ◽  
Toshinobu Banjo
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Reactive Ion Etching ◽  
Electron Cyclotron ◽  
Ion Etching ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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