Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

ABSTRACTA total area conversion efficiency of 11.1% has been achieved for a 1Ocm×1Ocm integrated-type single-junction a-Si solar cell submodule using a high-quality wide-bandgap p-layer doped with B(CH3)3 and other advanced techniques. This is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2. As for a multi-junction solar cell, 12.1% was obtained for a 1cm2 cell with a high-quality wide-bandgap a-Si i-layer. The layer was fabricated by a hydrogen dilution method at a low substrate temperature for a front active layer of an a-Si/a-Si/a-SiGe stacked solar cell.For further improvement in conversion efficiency, a wider-bandgap a-SiC was developed using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. From XPS and IR measurements, the resultant films were found to have high Si-C bond density and low Si-H bond density, p-type a-SiC was fabricated using the post-doping technique, and dark conductivity more than 10-5(Q. cm)-1 was obtained (Eopt3 ≥ 2eV; Eopt2 2.2eV), whereas that of conventional p-type a-SiC is less than 10-6(Ω·cm)-1. These properties are very promising for application to the p-layers of advanced a-Si solar cells.

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Stability of Amorphous Silicon Solar Cells — New Tandem a-SiC/a-Si Solar Cell

MRS Proceedings ◽

10.1557/proc-70-587 ◽

1986 ◽

Vol 70 ◽

Cited By ~ 1

Author(s):

Y. Tawada ◽

J. Takada ◽

M. Yamaguchi ◽

H. Yamagishi ◽

Y. Hosokawa ◽

...

Keyword(s):

Solar Cell ◽

Light Exposure ◽

Type A ◽

Metal Electrode ◽

Back Side ◽

Blocking Layer ◽

Exposure Test ◽

Si Solar Cell ◽

Instability Modes ◽

P Type

ABSTRACTBasic technologies for solving problems in thermal and light-induced degradation have been developed. The tandem type a-SiC/a-Si solar cell with blocking layers exhibits excellent stability for both thermal and sun light conditions. An observable light-induced degradation is not seen in the cell performance after light exposure test of 2000 hours. Two instability modes, that is, thermal and light-induced degradation have been investigated. For thermal degradation, a blocking layer for preventing diffusion has been inserted between the back side metal electrode and a n-layer and another blocking layer has been introduced between the np tunnel junction. To prevent light-induced degradation, p-type a-SiC layer of the pin structure on the side of a glass substrate/SnO2 has been deposited at the temperature of 70°C. The highest efficiency is 9.0% at the present stage, but it is expected to be improved to more than 10%.

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Through-Hole Contact (THC) integrated-type a-Si solar cell submodule by a new laser photo-etching method

Solar Energy Materials and Solar Cells ◽

10.1016/0927-0248(93)90043-3 ◽

1993 ◽

Vol 31 (2) ◽

pp. 97-108 ◽

Cited By ~ 2

Author(s):

H NISHIWAKI ◽

S SAKAI ◽

S MATSUMI ◽

S TSUDA ◽

S KIYAMA ◽

...

Keyword(s):

Solar Cell ◽

Type A ◽

Si Solar Cell ◽

Etching Method ◽

Through Hole

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EXCIMER LASER-INDUCED PATTERNING FOR THE METAL ELECTRODE OF INTEGRATED-TYPE A-SI SOLAR CELL SUBMODULES

Clean and Safe Energy Forever ◽

10.1016/b978-0-08-037193-1.50044-6 ◽

1990 ◽

pp. 192-196

Author(s):

S. Kiyama ◽

Y. Hirono ◽

T. Matsuoka ◽

M. Ohnishi ◽

S. Nakano ◽

...

Keyword(s):

Solar Cell ◽

Excimer Laser ◽

Type A ◽

Metal Electrode ◽

Si Solar Cell

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Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.399-401.1477 ◽

2011 ◽

Vol 399-401 ◽

pp. 1477-1480

Author(s):

Yan Li Xu ◽

Jin Hua Li

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Ion Beam ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Textured Surface ◽

Si Solar Cell ◽

The One ◽

P Type

n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

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p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application

Solar RRL ◽

10.1002/solr.201600007 ◽

2017 ◽

Vol 1 (2) ◽

pp. 1600007 ◽

Cited By ~ 2

Author(s):

Tristan Carrere ◽

Delfina Muñoz ◽

Marianne Coig ◽

Christophe Longeaud ◽

Jean-Paul Kleider

Keyword(s):

Solar Cell ◽

Ion Implantation ◽

Type A ◽

Heterojunction Solar Cell ◽

Solar Cell Application ◽

Silicon Heterojunction Solar Cell ◽

Plasma Immersion Ion Implantation ◽

P Type

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Critical Electric Field of InGaN p-i-n Solar Cell

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.284-287.1168 ◽

2013 ◽

Vol 284-287 ◽

pp. 1168-1172

Author(s):

Der Yuh Lin ◽

Chao Yu Chi

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Field Strength ◽

Electric Field ◽

Electric Field Strength ◽

High Efficiency ◽

Physical Models ◽

Electric Field Effect ◽

Type Layer ◽

P Type

We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4×1016cm-3and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.

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THROUGH-HOLE CONTACT (THC) INTEGRATED-TYPE A-SI SOLAR CELL SUBMODULES

Clean and Safe Energy Forever ◽

10.1016/b978-0-08-037193-1.50037-9 ◽

1990 ◽

pp. 157-161

Author(s):

M. Ohnishi ◽

H. Shibuya ◽

N. Okuda ◽

Y. Kishi ◽

K. Wakisaka ◽

...

Keyword(s):

Solar Cell ◽

Type A ◽

Si Solar Cell ◽

Through Hole

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Preparation of High-Quality poly-Si and μc-Si Films by the SPC Method

MRS Proceedings ◽

10.1557/proc-164-329 ◽

1989 ◽

Vol 164 ◽

Cited By ~ 8

Author(s):

T. Matsuyama ◽

M. Nishikuni ◽

M. Kameda ◽

S. Okamoto ◽

M. Tanaka ◽

...

Keyword(s):

Solar Cell ◽

Conversion Efficiency ◽

Solid Phase ◽

Wavelength Region ◽

Optical Transmittance ◽

High Quality ◽

Long Wavelength ◽

Si Solar Cell ◽

Si Films ◽

P Type

AbstractWe have achieved the highest total area conversion efficiency for an integrated type 10cm × 10cm a-Si solar cell at 10.2%. This value is the world record for a 10cm × 10cm a-Si solar cell. For further improvement of conversion efficiency in a-Si solar cells, it is necessary to develop materials with high-photosensitivity in the long wavelength region and materials with high conductivity. We have developed a Solid Phase Crystallization (SPC) method of growing a Si crystal at temperatures as low as 600°C. Using this method, thin-film polycrystalline silicon (poly-Si) with higP-photosensitivity in the long wavelength region and Hall mobility of 70cm2/V sec was obtained and quantum efficiency in the range of 800,∼ lO00nm was achieved up to 80% in the n-type poly-Si with grain size of about 2μm. We also succeeded in preparing a device-quality p-type microcrystalline silicon (μc-Si) using the SPC method at 620°C for 3 hours from the conventional plasma-CVD p-type amorphous silicon (a-5i) withoul using any post-doping process. Obtained properties of μd=2 × 103 (.cm) and a high optical transmittance in the 2.0 ∼ 3.0 eV range are better as a window material than the conventional p-type μc-Si:H. Therefore, it was concluded that the SPC method is better as a new technique to prepare high-quality solar cell materials.

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