A More Than 18% Efficiency Hit Structure a-Si/c-Si Solar Cell Using Artificially Constructed Junction (ACJ)

1992 ◽  
Vol 258 ◽  
Author(s):  
Y. Kuwano ◽  
S. Nakano ◽  
M. Tanaka ◽  
T. Takahama ◽  
T. Matsuyama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Layer Structure ◽  
Type A ◽  
Interface Layer ◽  
Material Technology ◽  
Si Solar Cell

ABSTRACTWe have obtained the world's highest total area conversion efficiency of 11.1% for a 100cm2 integrated-type single-junction a-Si solar cell submodule. This was achieved by the development of various advanced technologies, such as a new ultra-thin i/n interface layer and a new laser patterning method using an ablation phenomenon.To acheive further improvement in the conversion efficiency of a-Si based solar cells, we focus on polycrystalline silicon (poly-Si) thin-film for a-Si/poly-Si tandem solar cells. As far as material technology is concerned, we have used a new solid phase crystallization (SPC) method from amorphous silicon (a-Si) films deposited by plasma-CVD. The maximum mobility of 623 cm2/V.s was achieved on textured substrates at a carrier concentration of 3.0 × 1015 cm-3. This film has been applied to the active layer of poly-Si solar cells on metal substrates and a conversion efficiency of 6.2% has been obtained with poly-Si film of 12 μm thickness made by SPC at 600°C.In the field of device technology, we have developed new artificially constructed junction (ACJ) solar cells using p-type a-Si/i-type a-Si/n-type crystalline silicon (c-Si). We call this a HIT (Heterojunction with Intrinsic Ihin-layer) structure, and we have achieved a conversion efficiency of 18.1% for this type of solar cells. This is the highest reported value for a cell with a junction fabricated at low temperature (∼ 120°C).

High-Quality Amorphous Silicon Carbide Prepared by a New Fabrication Method for a Window P-Layer of Solar Cells

1992 ◽  
Vol 242 ◽  
Author(s):  
K. Ninomiya ◽  
H. Haku ◽  
H. Tarui ◽  
N. Nakamura ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Type A ◽  
Wide Bandgap ◽  
Dilution Method ◽  
High Quality ◽  
Bond Density ◽  
Si Solar Cell ◽  
P Type

ABSTRACTA total area conversion efficiency of 11.1% has been achieved for a 1Ocm×1Ocm integrated-type single-junction a-Si solar cell submodule using a high-quality wide-bandgap p-layer doped with B(CH3)3 and other advanced techniques. This is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2. As for a multi-junction solar cell, 12.1% was obtained for a 1cm2 cell with a high-quality wide-bandgap a-Si i-layer. The layer was fabricated by a hydrogen dilution method at a low substrate temperature for a front active layer of an a-Si/a-Si/a-SiGe stacked solar cell.For further improvement in conversion efficiency, a wider-bandgap a-SiC was developed using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. From XPS and IR measurements, the resultant films were found to have high Si-C bond density and low Si-H bond density, p-type a-SiC was fabricated using the post-doping technique, and dark conductivity more than 10-5(Q. cm)-1 was obtained (Eopt3 ≥ 2eV; Eopt2 2.2eV), whereas that of conventional p-type a-SiC is less than 10-6(Ω·cm)-1. These properties are very promising for application to the p-layers of advanced a-Si solar cells.

scholarly journals Hybrid(Luminescent and Fresnel ) Concentrators to Improve Solar Panel Conversion Efficiency

2011 ◽  
Vol 8 (2) ◽  
pp. 577-580 ◽  
Author(s):  
Baghdad Science Journal
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Silicon Solar Cells ◽  
The Sun ◽  
Crystalline Silicon Solar Cells ◽  
Si Solar Cell ◽  
Irradiance Spectrum

The spectral response of the Si solar cell does not coincidence with the sun irradiance spectrum, so the efficiency of the Si solar cell is not high. To improve the Si solar cell one try to make use of most region of the sun spectrum by using dyes which absorb un useful wavelengths and radiate at useful region of spectrum (by stock shift). Fluorescence's dye is used as luminescent concentrator to increase the efficiency of the solar cell. The results show that the performance efficiency and out power for crystalline silicon solar cells are improved.

scholarly journals Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Incident Light ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

Preparation of High-Quality poly-Si and μc-Si Films by the SPC Method

1989 ◽  
Vol 164 ◽  
Author(s):  
T. Matsuyama ◽  
M. Nishikuni ◽  
M. Kameda ◽  
S. Okamoto ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Solid Phase ◽  
Wavelength Region ◽  
Optical Transmittance ◽  
High Quality ◽  
Long Wavelength ◽  
Si Solar Cell ◽  
Si Films ◽  
P Type

AbstractWe have achieved the highest total area conversion efficiency for an integrated type 10cm × 10cm a-Si solar cell at 10.2%. This value is the world record for a 10cm × 10cm a-Si solar cell. For further improvement of conversion efficiency in a-Si solar cells, it is necessary to develop materials with high-photosensitivity in the long wavelength region and materials with high conductivity. We have developed a Solid Phase Crystallization (SPC) method of growing a Si crystal at temperatures as low as 600°C. Using this method, thin-film polycrystalline silicon (poly-Si) with higP-photosensitivity in the long wavelength region and Hall mobility of 70cm2/V sec was obtained and quantum efficiency in the range of 800,∼ lO00nm was achieved up to 80% in the n-type poly-Si with grain size of about 2μm. We also succeeded in preparing a device-quality p-type microcrystalline silicon (μc-Si) using the SPC method at 620°C for 3 hours from the conventional plasma-CVD p-type amorphous silicon (a-5i) withoul using any post-doping process. Obtained properties of μd=2 × 103 (.cm) and a high optical transmittance in the 2.0 ∼ 3.0 eV range are better as a window material than the conventional p-type μc-Si:H. Therefore, it was concluded that the SPC method is better as a new technique to prepare high-quality solar cell materials.

Properties of Sputtered-n-nc-Si:Er/p-Si Heterojunction Solar Cells

2015 ◽  
Vol 734 ◽  
pp. 791-795
Author(s):  
Guang Wei Wang ◽  
Sheng Li Lu ◽  
Xin Wei Zhao
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Heterojunction Solar Cells ◽  
Si Solar Cell ◽  
Heterojunction Diodes ◽  
Photoelectrical Conversion Efficiency

Nanocrystalline Si:Er (nc-Si:Er) films were sputtered on p-Si (100) substrates and diffused with phosphorus to form PN heterojunction diodes. The I-V properties of these diodes were characterized. And the properties of diodes without Er were compared with n-nc-Si:Er/p-Si. It was found that n-nc-Si:Er/p-Si diodes had better characteristics. Solar cells based on n-nc-Si:Er/i-nc-Si/p-Si were fabricated and characterized. The photoelectrical conversion efficiency of 18.13% for n-nc-Si:Er/i-nc-Si/p-Si solar cell was achieved.

scholarly journals Four-terminal perovskite-silicon tandem solar cells for low light applications

2021 ◽  
Vol 2103 (1) ◽  
pp. 012191
Author(s):  
A B Nikolskaia ◽  
S S Kozlov ◽  
M F Vildanova ◽  
O K Karyagina ◽  
O I Shevaleevskiy
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Perovskite Solar Cells ◽  
Tandem Solar Cell ◽  
Low Light ◽  
Tandem Solar Cells ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
High Efficient

Abstract Here novel high efficient semi-transparent perovskite solar cells (PSCs) based on ZrO2 photoelectrodes were fabricated and were used as top elements in tandem systems with crystalline silicon (c-Si) solar cells in four-terminal configuration. The comparative analysis of photovoltaic parameters measured for PSCs, c-Si solar cells and PSC/c-Si tandem solar cells demonstrated that the use of ZrO2 photoelectrodes allows to improve the PSC performance and to achieve efficiencies for PSC/c-Si tandem solar cell higher than for a standalone c-Si solar cell under varying illumination conditions.

INVESTIGATION OF NEAR-SURFACE DEFECTS INDUCED BY SPIKE RAPID THERMAL ANNEALING IN c-SILICON SOLAR CELLS

2016 ◽  
Vol 23 (02) ◽  
pp. 1550107
Author(s):  
GUODONG LIU ◽  
PAN REN ◽  
DAYONG ZHANG ◽  
WEIPING WANG ◽  
JIANFENG LI
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Surface Defects ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Near Surface ◽  
Si Solar Cell ◽  
Dislocation Defects

The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100[Formula: see text]C. Photo J–V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above [Formula: see text][Formula: see text]cm[Formula: see text].

Improving the Conversion Efficiency and Decreasing the Thickness of the HIT Solar Cell

2009 ◽  
Vol 1210 ◽  
Author(s):  
Hirotada Inoue ◽  
Yasufumi Tsunomura ◽  
Daisuke Fujishima ◽  
Ayumu Yano ◽  
Shigeharu Taira ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
High Conversion ◽  
Surface Recombination Velocity ◽  
Substrate Thickness ◽  
High Conversion Efficiency

AbstractIn order to reduce the power-generating cost of silicon solar cells, it is necessary to achieve a high conversion efficiency using a thinner crystalline silicon (c-Si) substrate. The HIT (Heterojunction with Intrinsic Thin-layer) solar cell is an amorphous silicon (a-Si) / c-Si heterojunction solar cell that exhibits the potential to make this possible. Our recent R&D activities have achieved the world’s highest conversion efficiency of 23.0% with a practical sized (100.4 cm2) HIT solar cell, by improving the quality of the surface passivation, reducing the optical absorption loss and reducing the resistance loss. We have also developed a HIT solar cell with a thickness of only 98 mm, which has a very high conversion efficiency of 22.8%. This value is comparable to that of the conventional HIT solar cell, which has a thickness of more than 200 mm. Moreover, we have fabricated HIT solar cells using thinner c-Si substrates (96 to 58 μm), and found that the Voc increased with decreases in the substrate thickness, and reached an extremely high value of 0.745 V with a thickness of only 58 μm. This indicates that the surface recombination velocity of the HIT structure is extremely low due to the excellent passivation of the c-Si surface.

The Study of Improving the Conversion Efficiency and Reducing the Thickness of the HIT Solar Cell

2011 ◽  
Vol 1288 ◽  
Author(s):  
Yasuko Hirayama ◽  
Hirotada Inoue ◽  
Kenta Matsuyama ◽  
Yasu umi Tsunomura ◽  
Daisuke Fujishima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
Si Substrate ◽  
Symmetrical Structure

ABSTRACTIn order to reduce the power-generating cost of silicon solar cells, it is necessary to achieve a high conversion efficiency using a thinner crystalline silicon (c-Si) substrate. The HIT solar cell is an amorphous silicon (a-Si) /crystalline silicon (c-Si) heterojunction solar cell that makes it possible to realize excellent surface passivation and hence high open circuit voltage (Voc). In addition, its symmetrical structure and a low-temperature fabrication process that is under 200°C provide advantages in reducing thermal and mechanical stresses within the device so that it can easily be applied to thinner solar cells. We fabricated HIT solar cells using thin wafers from 58-98 μm, and achieved a 22.8% conversion efficiency with a HIT solar cell using a 98-μm-thick wafer, and an excellent Voc value of 0.747 V with a HIT solar cell using a 58-μm-thick wafer.

A large-area luminescent downshifting layer containing an Eu3+ complex for crystalline silicon solar cells

2020 ◽  
Vol 49 (15) ◽  
pp. 4725-4731
Author(s):  
Daqing Yang ◽  
Haiduo Liang ◽  
Yujie Liu ◽  
Man Hou ◽  
Liping Kan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polyvinyl Alcohol ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Crystalline Silicon ◽  
Silicon Solar Cells ◽  
Large Area ◽  
Crystalline Silicon Solar Cells ◽  
Si Solar Cell

We present a large-area luminescent down-shifting layer consists of polyvinyl alcohol embedding a newly synthesized ternary Eu3+ complex. C-Si solar cell coated with this layer displayed an enhancement of ~15% in external quantum efficiency.

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