SrTiO3 and (Ba,Sr)TiO3 Thin Films Preparation by Ion Beam Sputtering and Their Dielectric Properties

1991 ◽  
Vol 243 ◽  
Author(s):  
Shintaro Yamamichi ◽  
Toshiyuki Sakuma ◽  
Takashi Hase ◽  
Yoichi Miyasaka
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Current Density ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sapphire Substrates ◽  
Capacitance Voltage ◽  
Beam Sputtering

AbstractSrTiO3 and (Ba,Sr)TiO3 thin films have been prepared by ion beam sputtering on Pd coated sapphire substrates. Film compositions were almost the same as target compositions when powder targets were used. Capacitance-voltage characteristics depended on Sr/Ti ratio of the SrTiO3 films. Only small changes of capacitance value were observed in the range from -3V to 3V when the Sr/Ti ratio was 1.0. Compared with rf-magnetron sputtered film, ion beam sputtered SrTiO3 film indicated lower leakage current density in 50nm thickness. In (Bax,Sr1-x)TiO3 thin films, dielectric constant changed with Ba content (x) and showed a maximum at x=0.5. It also changed with the firing temperature of target powder. The highest value was obtained by using the target powder fired at 900°C. A 100nm thick (Ba0.5,Sr0.5)TiO3 thin film indicated a dielectric constant value of 320.

Ion-Beam Sputtering Deposited Cu-Doped CdS Thin Film

2013 ◽  
Vol 743-744 ◽  
pp. 915-919
Author(s):  
Guang Xing Liang ◽  
Ping Fan ◽  
Peng Ju Cao ◽  
Zhuang Hao Zheng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ion Beam ◽  
Xrd Analysis ◽  
Ion Beam Sputtering ◽  
Structural Morphology ◽  
Wurtzite Phase ◽  
Cds Thin Film ◽  
Beam Sputtering ◽  
Cds Thin Films

Cu-doped CdS thin film has been successfully deposited by ion-beam sputtering deposition. The structural, morphology, optical and electrical properties of as-deposited and annealed Cu-doped CdS thin films were investigated. The heavily Cu-doped CdS films annealed at 400 °C was demonstrated to be improved in structural, morphology, electrical and optical properties. X-ray diffraction (XRD) analysis indicated the formation of polycrystalline CdS film with the structure of hexagonal wurtzite phase. No distinct impurity of Cu and Cu-S phase was detected in Cu-doped CdS thin films. Atomic force microscopy (AFM) revealed that the grain size was increased after annealed. Optical transmission and absorption spectroscopy measurement revealed a high absorption and energy band gap was of about 2.40 eV. The CdS thin film was of p-type conductivity and the resistivity was found to be 1.28×10-1Ωcm.

(Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputtering

1994 ◽  
Vol 64 (13) ◽  
pp. 1644-1646 ◽  
Author(s):  
Shintaro Yamamichi ◽  
Hisato Yabuta ◽  
Toshiyuki Sakuma ◽  
Yoichi Miyasaka
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Ratio Dependence ◽  
Beam Sputtering

Microstructure of polycrystalline near epitaxial (100) and (111) pyrochlore on A (100) MgO Substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 1062-1063
Author(s):  
Shang Hsien Rou
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Physical Phenomena ◽  
Mgo Substrate

New and interesting physical phenomena are being observed via thin film depositions using a variety of processing techniques in different material systems. The present study describes Pb-Zr-Ti-O pyrochlore thin films which were deposited onto (100) MgO substrates using an ion beam sputtering technique. These films are of interest because of their unique microstructure which may provide valuable information in better understanding the epitaxial growth of thin films. Characterization were performed using conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Special TEM sample preparation procedures have been developed, which will be reported elsewhere.The as-deposited pyrochlore thin film is near epitaxial and is oriented with both (100) and (111) parallel to the (100) of the MgO substrate. Figure 1(a) shows the selected area diffraction pattern (SADP) of the pyrochlore thin film taken parallel to the [100] zone axis of the substrate.

Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates.

2002 ◽  
Vol 747 ◽  
Author(s):  
N. A. Suvorova ◽  
A. H. Mueller ◽  
A. A. Suvorova ◽  
M. Saunders ◽  
E. A. Irene
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Resolution Electron ◽  
Capacitance Voltage ◽  
Beam Sputtering ◽  
Order Of Magnitude ◽  
Rf Sputter Deposition

ABSTRACT(Ba,Sr)TiO3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.

Deposition of tin oxides by Ion-Beam-Sputtering

2012 ◽  
Vol 1494 ◽  
pp. 153-158 ◽  
Author(s):  
Martin Becker ◽  
Angelika Polity ◽  
Davar Feili ◽  
Bruno K. Meyer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Tin Oxide ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ion Beam Sputtering ◽  
Oxide Thin Films ◽  
Beam Sputtering ◽  
P Type

ABSTRACTSynthesis of both p-type and n-type oxide semiconductors is required to develop oxide-based electronic devices. Tin monoxide (SnO) recently has received increasing attention as an alternative p-type oxide semiconductor because it is a simple binary compound consisting of abundant elements. Another phase of the tin oxygen system, SnO2, is of great technological interest as transparent electrodes and as heat-reflecting filters. The preparation of tin oxide thin films has been performed by many different procedures. Radio-frequency (RF) ion-thrusters, as designed for propulsion applications, are also qualified for thin film deposition and surface etching, because different gas mixtures, extraction voltages and RF power can be applied. Tin oxide thin films were grown by ion beam sputtering (IBS) using a 3” metallic tin target. Different aspects of the thin film growth and properties of the tin oxide phases were investigated in relation to flux of oxygen fed into the gas discharge in the ion thruster. Results on thin film growth by IBS will be presented, structural, vibrational and optical properties of the films will be discussed.

Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates.

2002 ◽  
Vol 745 ◽  
Author(s):  
N. A. Suvorova ◽  
A. H. Mueller ◽  
A. A. Suvorova ◽  
M. Saunders ◽  
E. A. Irene
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Resolution Electron ◽  
Capacitance Voltage ◽  
Beam Sputtering ◽  
Order Of Magnitude ◽  
Rf Sputter Deposition

ABSTRACT(Ba,Sr)TiO3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.

Structural and Ferroelectric Properties of Large c/a Phase Bismuth Ferrite Thin Films Prepared by Ion Beam Sputtering

2011 ◽  
Vol 1292 ◽  
Author(s):  
Seiji Nakashima ◽  
Yosuke Tsujita ◽  
Hironori Fujisawa ◽  
Jung Min Park ◽  
Takeshi Kanashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Domain Switching ◽  
Ion Beam ◽  
Ferroelectric Properties ◽  
Mixed Phase ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

ABSTRACTBiFeO3 (BFO) thin films have been deposited on SrRuO3/SrTiO3 (001) substrate by using ion beam sputtering process. At low oxygen partial pressure of 11 m Pa, rhombohedral and large c/a mixed phase thin film have been obtained in spite of rhombohedral BFO single phase formation at high oxygen partial pressure of 73 mPa. From wide area 2θ-Ψ mappings, diffraction peaks from large c/a phase BFO thin film were obtained with the same extinction rule as those of rhombohedral BFO. Reciprocal space mappings around BFO (003) and BFO (103) spots indicate that lattice parameters of large c/a phase BFO were a = 0.381 nm and c = 0.461 nm (c/a =1.22), respectively. Moreover ferroelectric domain switching could be observed in both of rhombohedral BFO and mixed phase BFO thin films.

The Effects of La Concentration on the Properties of PLT Thin Films: From the Perspective of Dram Applications

1994 ◽  
Vol 361 ◽  
Author(s):  
Seong Jun Kang ◽  
Jeong Seon Ryoo ◽  
Yung Sup Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Current Density ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Lanthanum Titanate

ABSTRACTWe have studied the effects of La concentration on the dielectric and ferroelectric properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the dielectric and ferroelectric properties were greatly affected by the La concentration. The dielectric constants of the films varied from 340 to 870 with varying La concentration in the range from 15 to 33 mol%. Hysteresis loop became slimmer with the increase of La concentration from 15 to 28 mol% and a little fatter again with the increase of La concentration from 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film showed the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100 Hz, the dielectric constant and the loss tangent of PLT(28) thin film were 940 and 0.08, respectively. Its leakage current density at 1.5×10 V/cm was 1×10−6 A/cm2. The comparison between the simulated and the experimental curves for the switching transient characteristics showed that PLT(28) thin film behaved like normal dielectrics.

Preparation of thin films of (Tb,Dy)Fe2 giant magnetostrictive alloy by ion beam sputtering process.

1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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