Radiative Recombination Mechanisms in Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
S. Gardelis ◽  
B. Hamilton ◽  
R. A. Kubiak ◽  
T. E Whall ◽  
E. C. H. Parker
Keyword(s):  
Thermal Stability ◽  
Porous Silicon ◽  
Thermal Behaviour ◽  
Radiative Recombination ◽  
Random Potential ◽  
Optical Transitions ◽  
Transition Energies ◽  
Material Systems ◽  
Spectral Behaviour ◽  
Line Widths

ABSTRACTThis paper attempts to address the question of the role played by dimensionality in the observed optical transitions of porus silicon and related material systems. The effect of the degree of porosity on the transition energies, line widths and thermal stability. In addition more subtle effects observed in the thermal behaviour of the spectra which may relate to carrier trapping in a random potential of an imperfect localised system are reported. Comparisons with the spectral behaviour which would be predicted by quantum scale confinement of electronic particles are made.

Study of Thermal Behaviour of EPDM/SBR Blends and Carbon Nanocoatings Deposited by Sputtering

2021 ◽  
Vol 875 ◽  
pp. 116-120
Author(s):  
Muhammad Alamgir ◽  
Faizan Ali Ghauri ◽  
Waheed Qamar Khan ◽  
Sajawal Rasheed ◽  
Muhammad Sarfraz Nawaz ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Weight Loss ◽  
Thermogravimetric Analysis ◽  
Thermal Behavior ◽  
Thermal Behaviour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Stability Of

In this study, the effect of SBR concentration (10 Phr, 20 Phr & 30 Phr ) on the thermal behavior of EPDM/SBR blends was studied. Thermogravimetric analysis (TGA) was used to check weight loss of samples as function of temperature by heating upto 600°C. X-ray diffraction (XRD) was performed to determine quality and % crystallinity of the elastomer blends. It was seen that % crystallinity improved with an increase in the content of SBR in EPDM/SBR blends. TGA revealed that the thermal stability of EPDM/SBR blends has improved by 17% than neat EPDM. Carbon nano-coatings produced by sputtering have no beneficial influence on thermal behaviour of elastomers.

CRDS study of auto-ionizing Rydberg states of argon in a microwave discharge This article is part of a Special Issue on Spectroscopy at the University of New Brunswick in honour of Colan Linton and Ron Lees.

2009 ◽  
Vol 87 (5) ◽  
pp. 575-581 ◽  
Author(s):  
B. M. van der Ende ◽  
C. Winslade ◽  
R. L. Brooks ◽  
R. H. deLaat ◽  
N. P.C. Westwood
Keyword(s):  
New Brunswick ◽  
Excited States ◽  
Microwave Discharge ◽  
Rydberg States ◽  
Spectral Lines ◽  
Optical Transitions ◽  
Single Source ◽  
Special Issue ◽  
Line Widths ◽  
The University

Optical transitions from two microwave discharge excited states of argon have been observed using cavity ring-down spectroscopy. These transitions originate on the high-lying levels, 3d[1/2] 1° and 3d[3/2] 2° , and terminate on the nf ′[5/2] Rydberg (n = 8 to 22) levels, which, except for n = 8, lie between the 2P3/2 and 2P1/2 ionization thresholds. In total, 24 such spectral lines have been observed. The quantum defect for the f ′ series has been measured and is compared to previously measured values. We observe a nearly threefold jump in line width in going from n = 8 to n = 9, below and above the 2P3/2 threshold, respectively. The line widths are broad and increase monotonically with n (above 9), in contrast to the narrowing of line widths usually observed. We cannot attribute this to a single source but conclude that collisional, quasielastic l-mixing of the nf ′[5/2] Rydberg states plays a significant role.

Photoluminescence Study of Radiative Recombination in Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Chun Wang ◽  
Franco Gaspari ◽  
Stefan Zukotynski
Keyword(s):  
Porous Silicon ◽  
Excited States ◽  
Ground State ◽  
Radiative Recombination ◽  
Single Electron ◽  
Photoluminescence Study ◽  
Recombination Centre ◽  
Electron Center ◽  
Recombination Centers

AbstractPhotoluminescence has been studied in porous silicon. Two types of radiative recombination centers have been identified. One gives rise to luminescence at about 820 nm and is believed to be related to Si-H bonds. The second gives rise to luminescence at about 770 nm and is likely associated with S-O bonds. Above about 20K radiative recombination is assisted by excited states of the recombination centre located about 10 meV above the ground state. The Si-H recombination centre is a single electron center whereas the Si-O center appears to be a multi-electron center.

Determination of the spectral behaviour of porous silicon based photodiodes

1999 ◽  
Vol 43 (6) ◽  
pp. 1153-1157 ◽  
Author(s):  
R.J Martı́n-Palma ◽  
R Guerrero-Lemus ◽  
J.D Moreno ◽  
J.M Martı́nez-Duart
Keyword(s):  
Porous Silicon ◽  
Spectral Behaviour ◽  
Silicon Based

Geometrical effects and disintegration of narrow TiSi2/poly-Si lines

1990 ◽  
Vol 181 ◽  
Author(s):  
H. Norström ◽  
K. Maex ◽  
P. Vandenabeele
Keyword(s):  
Thermal Stability ◽  
Line Width ◽  
Side Wall ◽  
Geometrical Shape ◽  
Cross Sectional ◽  
Line Widths ◽  
Geometrical Effects ◽  
Thermal Stability Of

ABSTRACTThe geometrical shape and the thermal stability of the TiSi2/poly-Si interface on narrow lines has been studied. The examined line-widths varied between 0.8 μm and 1.5 μm. The thermal stability was found to strongly correlate to the actual line-width of the structures. At the onset of degradation, at and above 900°C, narrow lines were observed to disintegrate at a much faster rate than wider ones. Cross-sectional microscopy (TEM and SEM) revealed the TiSi2/poly-Si interface to be curved inwards. The interface bowing was found to be more pronounced on narrow lines. It is suggested that the interface bowing results from a mechanical pinning of the TiSi2/poly-Si interface by the side-wall spacers.

A model of radiative recombination in n-type porous silicon–aluminum Schottky junction

1999 ◽  
Vol 74 (14) ◽  
pp. 1960-1962 ◽  
Author(s):  
M. Balucani ◽  
V. Bondarenko ◽  
L. Franchina ◽  
G. Lamedica ◽  
V. A. Yakovtseva ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Radiative Recombination ◽  
Schottky Junction

Saturation of optical transitions in quantum dots and wires of porous silicon

1995 ◽  
Vol 17 (1) ◽  
pp. 41-45 ◽  
Author(s):  
V. Dneprovskii ◽  
N. Gushina ◽  
D. Okorokov ◽  
V. Karavanskii ◽  
E. Dovidenko
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Optical Transitions

Thermal stability and optical transitions of Er3+/Yb3+-codoped barium gallogermanate glass

2007 ◽  
Vol 29 (11) ◽  
pp. 1475-1480 ◽  
Author(s):  
Kai Xiao ◽  
Zhongmin Yang
Keyword(s):  
Thermal Stability ◽  
Optical Transitions

Volatility Studies of Metal Chelates. IV*Thermal Behaviour of Copper(II) Chelates of Aryl β-Diketones

1979 ◽  
Vol 32 (2) ◽  
pp. 277 ◽  
Author(s):  
S Dilli ◽  
K Robards
Keyword(s):  
Thermal Stability ◽  
Thermal Analysis ◽  
Differential Thermal Analysis ◽  
Aromatic Ring ◽  
Thermal Behaviour ◽  
Metal Chelates ◽  
Fluorine Substitution

The thermal stability and volatility of the copper (II) chelates of 38 aryl β-diketones have been examined by combined thermogravimetry and differential thermal analysis. Volatility is characterized by fluorine substitution (in R and R' of RCOCH2COR?), particularly in the alkyl (R) moiety of the β-diketone. When chlorine, bromine and methyl substituents are introduced into the aromatic ring (R'), there is a significant reduction in volatility. If R is CH3, thermal stability is markedly affected, especially when R' is C6F5.

scholarly journals Synthesis and thermal studies of solid state 2-chloro-benzylidenepyruvic acid and its compounds with sodium, aluminium (III), gallium (III) and indium (III) cations

2004 ◽  
Vol 29 (1) ◽  
pp. 31-40 ◽  
Author(s):  
G. Bannach ◽  
E. Schnitzler ◽  
C. B. Melios ◽  
M. Ionashiro
Keyword(s):  
Thermal Stability ◽  
Thermal Analysis ◽  
Thermal Decomposition ◽  
Differential Thermal Analysis ◽  
Solid State ◽  
Chemical Analysis ◽  
Thermal Behaviour ◽  
Thermal Studies ◽  
X Ray ◽  
Derivative Thermogravimetry

The synthesis of sodium 2-chlorobenzylidenepyruvate and its corresponding acid as well as binary, binary together with it's acid or hydroxo-2-chorobenzylidenepyruvate of aluminium (III), gallium (III) and indium (III), were isolated. Chemical analysis, thermogravimetry, derivative thermogravimetry (TG/DTG), simultaneous thermogravimetry-differential thermal analysis (TG-DTA) and X-ray powder diffractometry have been employed to characterize and to study the thermal behaviour of these compounds. The results provided information concerning the stoichiometry, crystallinity, thermal stability and thermal decomposition.

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