In-situ emissivity and temperature measurement during rapid thermal processing (RTP)

1992 ◽  
Vol 260 ◽  
Author(s):  
P. Vandenabeele ◽  
R. J. Schreutelkamp ◽  
K. Maex ◽  
C. Vermeiren ◽  
W. Coppye
Keyword(s):  
Thin Film ◽  
Temperature Measurement ◽  
Measurement Technique ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Determination ◽  
Optical Detector ◽  
Accurate Temperature ◽  
Temperature Measurement Technique

ABSTRACTA prototype RTP system has been developed which allows for in-situ emissivity and temperature measurements. The wafer emissivity is measured by using an optical detector at a wavelength of 2.4 μm and by modulation of the lamp power. This method permits accurate temperature determination in the range from 400 to 1200°C, independent of wafer backside roughness, backside layers, and transmit tance. The feasibility of the temperature measurement technique is demonstrated by using wafers with built-in thermocouples and highly As-doped wafers with different backside roughnesses or layers. The emissivity variations during processing can also be used to study thin film reactions in-situ. This is demonstrated for Co silicidation using probing wavelengths varying from 0.6 to 3.2 μm.

In-Situ Temperature Control for Rtp Via Thermal Expansion Measurement

1993 ◽  
Vol 303 ◽  
Author(s):  
Bruce Peuse ◽  
Allan Rosekrans
Keyword(s):  
Thermal Expansion ◽  
Temperature Control ◽  
Measurement Technique ◽  
Preliminary Data ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Wafer Temperature ◽  
Thermal Expansion Measurement

ABSTRACTA new method of temperature control for rapid thermal processing of silicon wafers is presented whereby in-situ wafer temperature is determined by measurement of wafer thermal expansion via an optical micrometer mechanism. The expansion measurement technique and its implementation into a rapid thermal processing system for temperature control are described. Preliminary data show the wafer to wafer temperature repeatability to be 1% (3-σ) using this technique.

Laser Ultrasonic Instrumentation for Accurate Temperature Measurement of Silicon Wafers in Rapid Thermal Processing Systems

1998 ◽  
Vol 525 ◽  
Author(s):  
Dan Klimek ◽  
Brian Anthonyt ◽  
Agostino Abbate ◽  
Petros Kotidis
Keyword(s):  
Temperature Measurement ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Thickness Variation ◽  
Laser Ultrasonic ◽  
Ultrasonic Methods ◽  
Wafer Thickness ◽  
Accurate Temperature ◽  
Accurate Temperature Measurement

ABSTRACTResults are presented that demonstrate the use of laser ultrasonic methods to determine the temperature of silicon wafers under conditions consistent with applications in the RTP industry. The results show that it is possible to measure the temperature of Si(100) wafers to an accuracy approaching ± 1°C (1σ) even with wafer thickness variation over a range of 2 to 3 percent.

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

Ripple Technique; a Novel Non-Contact Wafer Emissivity and Temperature Method for RTP

1991 ◽  
Vol 224 ◽  
Author(s):  
C. Schietinger ◽  
B. Adams ◽  
C. Yarling
Keyword(s):  
Optical Fiber ◽  
Measurement Technique ◽  
Thermal Processing ◽  
High Speed ◽  
Rapid Thermal Processing ◽  
Wafer Surface ◽  
Speed Measurement ◽  
Temperature Method ◽  
Emissivity Measurement ◽  
Emissivity Measurements

AbstractA novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.

Thin Film Synthesis of Ti3SiC2by Rapid Thermal Processing of Magnetron-Sputtered TiCSi Multilayer Systems

2012 ◽  
Vol 15 (4) ◽  
pp. 269-275 ◽  
Author(s):  
Marcus Hopfeld ◽  
Rolf Grieseler ◽  
Thomas Kups ◽  
Marcus Wilke ◽  
Peter Schaaf
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Multilayer Systems ◽  
Film Synthesis
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