The Effect of D-Defect in Silicon Single Crystal on Oxygen Precipitation

1992 ◽  
Vol 262 ◽  
Author(s):  
I. Fusegawa ◽  
N. Fujimaki ◽  
H. Yamagishi
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Thermal Process ◽  
Flow Patterns ◽  
Optical Microscope ◽  
Silicon Single Crystal ◽  
Thermal Treatments ◽  
Oxygen Precipitation ◽  
Predominant Factor

ABSTRACTWe investigated the effect of D-defect in CZ silicon single crystals on the oxygen precipitation by two-step thermal treatments consisting of the first annealing in nitrogen ambient at 1073K and the second annealing in dry oxygen ambient at 1273K. The density of D-defect was measured by counting ‘flow patterns’ using an optical microscope after preferential etching in Secco's solution for 30 minutes. It was found that the amount of oxygen precipitation along the growth axis was not affected by D-defect. The predominant factor of the oxygen precipitation after the two-step thermal process is the nuclei of oxygen precipitation generated around 723K during CZ crystal growth.

Oxygen Precipitation Nonuniformity for Thermal History Around 723K During Cz Crystal Growth

1992 ◽  
Vol 262 ◽  
Author(s):  
I. Fusegawa ◽  
H. Yamagishi
Keyword(s):  
Crystal Growth ◽  
Thermal History ◽  
Silicon Single Crystal ◽  
Nonuniform Distribution ◽  
Precipitation Process ◽  
Thermal Treatments ◽  
Distribution Profile ◽  
Oxygen Precipitation ◽  
Thermal Histories ◽  
The One

ABSTRACTWe investigated phenomena of oxygen precipitation nonuni-formity along crystal growth axis due to different thermal histories during CZ crystal growth. The oxygen precipitation process employed in this paper was two-step thermal treatments consisting of the first annealing in nitrogen ambient at 1073K for 4 hrs and the second annealing in dry oxygen ambient at 1273K for 16 hrs. The amount of the oxygen precipitation at the shoulder of a silicon single crystal was higher than the one at the tail end. We found this nonuniform distribution profile was due to the thermal history around 723K during crystal growth. Such an nonuniformity could be improved remarkably by adding a preannealing in dry oxygen ambient at 723K for 2 hrs before the two-step thermal treatment.

3D simulation of feed rod melting in floating zone silicon single crystal growth

2015 ◽  
Vol 51 (1) ◽  
pp. 25-36 ◽  
Author(s):  
M. Plāte ◽  
A. Krauze ◽  
J. Virbulis
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
3D Simulation ◽  
Floating Zone

Unsteady 3D and analytical analysis of segregation process in floating zone silicon single crystal growth

2009 ◽  
Vol 45 (4) ◽  
pp. 549-556 ◽  
Author(s):  
K. Lācis ◽  
◽  
A. Muižnieks ◽  
N. Jēkabsons ◽  
A. Rudevičs ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone ◽  
Analytical Analysis ◽  
Segregation Process

scholarly journals Single Crystal Growth and Physical Properties of Pyroxene CoGeO3

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 378
Author(s):  
Li Zhao ◽  
Zhiwei Hu ◽  
Hanjie Guo ◽  
Christoph Geibel ◽  
Hong-Ji Lin ◽  
...  
Keyword(s):  
High Pressure ◽  
Magnetic Properties ◽  
Magnetic Susceptibility ◽  
Crystal Growth ◽  
Physical Properties ◽  
Single Crystal ◽  
Single Crystals ◽  
Magnetic Moments ◽  
Single Crystal Growth ◽  
The Impact

We report on the synthesis and physical properties of cm-sized CoGeO3 single crystals grown in a high pressure mirror furnace at pressures of 80 bar. Direction dependent magnetic susceptibility measurements on our single crystals reveal highly anisotropic magnetic properties that we attribute to the impact of strong single ion anisotropy appearing in this system with TN∼33.5 K. Furthermore, we observe effective magnetic moments that are exceeding the spin only values of the Co ions, which reveals the presence of sizable orbital moments in CoGeO3.

scholarly journals Growth of single crystals in the (Na1/2Bi1/2)TiO3–(Sr1–xCax)TiO3 system by solid state crystal growth

2021 ◽  
Author(s):  
Phan Gia Le ◽  
Huyen Tran Tran ◽  
Jong-Sook Lee ◽  
John G. Fisher ◽  
Hwang-Pill Kim ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Solid State ◽  
Single Crystal ◽  
Single Crystals ◽  
Piezoelectric Properties ◽  
Single Crystal Growth ◽  
Crystal Growth Rate ◽  
Large Strains ◽  
Growth Technique ◽  
The Matrix

AbstractCeramics based on (Na1/2B1/2)TiO3 are promising candidates for actuator applications because of large strains generated by an electric field-induced phase transition. For example, the (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 system exhibits a morphotropic phase boundary at x = 0.2–0.3, leading to high values of inverse piezoelectric constant d*33, which can be further improved by the use of single crystals. In our previous work, single crystals of (Na1/2B1/2)TiO3-SrTiO3 and (Na1/2B1/2)TiO3-CaTiO3 were grown by the solid state crystal growth technique. Growth in the (Na1/2B1/2)TiO3-SrTiO3 system was sluggish whereas the (Na1/2B1/2)TiO3-CaTiO3 single crystals grew well. In the present work, 0.8(Na1/2Bi1/2)TiO3-0.2(Sr1−xCax)TiO3 single crystals (with x = 0.0, 0.1, 0.2, 0.3, 0.4) were produced by the solid state crystal growth technique in an attempt to improve crystal growth rate. The dependence of mean matrix grain size, single crystal growth distance, and electrical properties on the Ca concentration was investigated in detail. These investigations indicated that at x = 0.3 the matrix grain growth was suppressed and the driving force for single crystal growth was enhanced. Replacing Sr with Ca increased the shoulder temperature Ts and temperature of maximum relative permittivity Tmax, causing a decrease in inverse piezoelectric properties and a change from normal to incipient ferroelectric behavior.

Flux-assisted single crystal growth and heteroepitaxy of perovskite-type mixed-metal borohydrides

CrystEngComm ◽  
2015 ◽  
Vol 17 (13) ◽  
pp. 2682-2689 ◽  
Author(s):  
Pascal Schouwink ◽  
Adrien Ramel ◽  
Enrico Giannini ◽  
Radovan Černý
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Single Crystal Growth ◽  
Mixed Metal ◽  
Perovskite Type

Single crystals of mixed-metal perovskite-type borohydride KCa(BH4)3 are prepared by using an easily generalized flux melting procedure based on eutectic borohydride systems.

Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth

2002 ◽  
Vol 5 (4-5) ◽  
pp. 347-351 ◽  
Author(s):  
Erich Tomzig ◽  
Janis Virbulis ◽  
Wilfried von Ammon ◽  
Yuri Gelfgat ◽  
Leonid Gorbunov
Keyword(s):  
Crystal Growth ◽  
Magnetic Fields ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Combined Magnetic Fields
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