Magnetoreflection in Ion-Implanted Graphite

1983 ◽  
Vol 27 ◽  
Author(s):  
L.E Mcneil ◽  
B.S. Elman ◽  
M.S Dresselhaus ◽  
G. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Raman Spectroscopy ◽  
Band Structure ◽  
Ion Implantation ◽  
Room Temperature ◽  
Electronic Band Structure ◽  
Band Model ◽  
Electronic Band ◽  
Lattice Damage ◽  
Induced Changes ◽  
Foreign Species

ABSTRACTThe use of a hot stage (T ∼ 600°C) for ion implantation into graphite permits the introduction of foreign species into the host material while eliminating most of the lattice damage associated with ion implantation at room temperature. This permits the use of the magnetoreflection technique for examination of changes in the electronic band structure induced by implantation Samples of graphite implanted with 31P and 11B at various energies and fluences are examined, and the in-plane and c-axis disorder are characterized using Raman spectroscopy and Rutherford Backscattering Spectrometer (RBS) techniques. Implantation-induced changes in the electronic band structure are interpreted in terms of the Slonczewski-Weiss- McClure band model. Small changes are found relative to the band parameters that describe pristine graphite.

scholarly journals Scrutinizing the stability and exploring the dependence of thermoelectric properties on band structure of 3d-3d metal-based double perovskites Ba2FeNiO6 and Ba2CoNiO6

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shabir Ahmad Mir ◽  
Dinesh C. Gupta
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Band Structure ◽  
Room Temperature ◽  
Electronic Band Structure ◽  
Double Perovskites ◽  
Electronic Band ◽  
Half Metal ◽  
The Stability ◽  
Wasted Energy

AbstractThrough the conventional DFT computation, we have designed new oxide double perovskites Ba2FeNiO6 and Ba2CoNiO6. The structural and thermodynamic stabilities are predicted by optimizing the crystal structure and evaluation of enthalpy of formation, respectively. Then by using the optimized lattice constant, we have explored the different physical properties. The GGA + mBJ electronic band-structure illustrates Ba2FeNiO6 is a half-metal with 100% spin polarization at the Fermi level. While Ba2CoNiO6 shows a ferromagnetic semiconducting nature. The change in the electronic structure when Fe is replaced by Co is explained with the help of the orbital diagram and exchange interaction. The eg-eg hybridization that happens via O-p states is strong because Fe–O–Ni and Co–O–Ni bond angles are strictly 180°. The narrow bandgaps in the semiconducting channels prompted us to analyze the applicability of these materials towards thermoelectric technology. Besides this, we have investigated the dependency of transport properties on electronic band structure. The semiconducting nature in Ba2CoNiO6 results in a significant ZT around 0.8 at room temperature makes it suitable for wasted-energy regeneration

Highly Sensitive Strain Sensor Using Dumbbell-Shape Graphene Nanoribbon

2017 ◽  
Author(s):  
Qinqiang Zhang ◽  
Meng Yang ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
First Principles ◽  
Room Temperature ◽  
Electronic Band Structure ◽  
Strain Sensor ◽  
Uniaxial Strain ◽  
First Principles Calculations ◽  
Electronic Band ◽  
Highly Sensitive

A nano-scale strip of graphene is known as graphene nano-ribbon (GNR). Previous studies have shown that the armchair-type GNR (aGNR) can open the electronic band gap at room temperature, and the band gap increases monotonically with the decrease in the width of aGNR. The critical width at which aGNR shows semi-conductive characteristics at room temperature is about 70 nm, when it is passivated by hydrogen on both sides. However, the electronic band structure varies frequently as a function of the number of carbon atoms along its width direction. In order to decrease the large variation of the band gap of aGNR to control the electronic properties of GNR for highly sensitive sensors and high performance devices, the electronic band structure of various dumbbell-shape structure of aGNR was analyzed by first-principles calculations based on the density functional theory using implemented in SIESTA package. It was shown that the width of aGNR had a large effect on the electronic band structure and the amplitude of the fluctuation of the band gap as a function of the number of carbon atoms decreased drastically. The electronic band structure of various GNRs under the application of uniaxial strain was also analyzed by using the first-principles calculations, in this study. It was confirmed that the effective band gap of aGNR thinner than 70 nm varies drastically under the application of uniaxial strain, and this result clearly indicates the possibility of a highly sensitive strain sensor using dumbbell-shape GNR structures.

scholarly journals Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

2013 ◽  
Vol 103 (2) ◽  
pp. 023108 ◽  
Author(s):  
Jaya Kumar Panda ◽  
Anushree Roy ◽  
Mauro Gemmi ◽  
Elena Husanu ◽  
Ang Li ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Resonance Raman Spectroscopy ◽  
Resonance Raman ◽  
Temperature Dependent ◽  
Electronic Band

Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7585-7592 ◽  
Author(s):  
Bernt Ketterer ◽  
Martin Heiss ◽  
Emanuele Uccelli ◽  
Jordi Arbiol ◽  
Anna Fontcuberta i Morral
Keyword(s):  
Raman Spectroscopy ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Gaas Nanowires ◽  
Resonant Raman

scholarly journals Na Induced Changes in the Electronic Band Structure of Graphene Grown on C-Face SiC

Graphene ◽  
2013 ◽  
Vol 02 (01) ◽  
pp. 1-7 ◽  
Author(s):  
Leif I. Johansson ◽  
Chao Xia ◽  
Chariya Virojanadara
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Induced Changes

Ion-Implantation Studies of Graphite

1982 ◽  
Vol 20 ◽  
Author(s):  
B.S. Elman ◽  
M. Hom ◽  
E.W. Maby ◽  
M.S. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Elevated Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Pyrolytic Graphite ◽  
Structural Disorder ◽  
Postimplantation Annealing ◽  
Lattice Damage ◽  
Secondary Ion

ABSTRACTIon implantation of highly oriented pyrolytic graphite (HOPG) is studied using various characterization techniques, including Raman spectroscopy and Secondary Ion Mass Spectroscopy (SIMS). Particular attention is given to the annealing of the implantation-induced lattice damage using both hot substrate implantation (200 < T1< 1000°C) and postimplantation annealing. The Raman spectra provide detailed information on the implantation-induced structural disorder by analysis of the disorder-induced and Raman-allowed features in the first- and second-order spectra. SIMS measurements show that the implanted profile is essentially the same for hot substrate and room temperature implantation for the case of HOPG. It is shown that implantation at elevated temperatures prevents amorphization more effectively than implantation at room temperature and subsequent annealing at the same elevated temperature. The annealing results show that fundamentally different defects are created during room temperature and hot substrate implantation.

The electronic band structure of silicon

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band
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