High Energy Ion Beam Mixing in Al2 O3

1983 ◽  
Vol 27 ◽  
Author(s):  
M. B. Lewis ◽  
C. J. Mchargue
Keyword(s):  
Elevated Temperatures ◽  
Ion Beam ◽  
High Energy ◽  
Binary Collision ◽  
Surface Layers ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Metal Atoms ◽  
Radiation Enhanced Diffusion

ABSTRACTThe ion beam mixing technique has been employed to mix metal atoms into the surface layers of Al2O3. Ion beams of Fe+ and Zr+ in the 1 to 4 MeV energy range were used to irradiate Al2O3 specimens on the surfaces of which films of chromium or zirconium had been evaporated. Some specimens were irradiated at elevated temperatures of 873 or 1173 K. Rutherford backscattering (RBS) and channeling methods were used to measure the metal atom depth profiles near the surface. Analyses of the backscattering data included binary collision calculations using the codes TRIM and MARLOWE. The significance and limitations of high energy (>1 MeV) beams for ion beam mixing experiments is discussed. Evidence was found for radiation enhanced diffusion and/or solubility of zirconium and chromium in Al2O3 at 873 K.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Ion beam mixing and radiation-enhanced diffusion in metallic glasses

1988 ◽  
Vol 140 ◽  
pp. 267-275 ◽  
Author(s):  
R.S. Averback ◽  
H. Hahn ◽  
Fu-Rong Ding
Keyword(s):  
Metallic Glasses ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion

Modification of μm Thick Surface Layers Using keV Ion Energies

1983 ◽  
Vol 27 ◽  
Author(s):  
L. E. Rehn ◽  
N. Q. Lam ◽  
H. Wiedersich
Keyword(s):  
Elevated Temperature ◽  
Elevated Temperatures ◽  
Diffusion Processes ◽  
Experimental Studies ◽  
Surface Layers ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Ni Alloy ◽  
Ion Energies ◽  
Radiation Induced

ABSTRACTRoot-mean-square diffusion distances for both vacancy and interstitial defects in metals can be very large at elevated temperatures, e.g. several μm's in one second at 500°C. Consequently, defects that escape the implanted region at elevated temperature can produce compositional and microstructural changes to depths which are much larger than the ion range. Because of the high defect mobilities, and of the fact that diffusion processes must compete with the rate of surface recession, the effects of defect production (ballistic mixing), radiation-enhanced diffusion and radiation- induced segregation become spatially separated during ion bombardment at elevated temperature. Results of such experimental studies in a Cu-Ni alloy are presented, discussed and compared with predictions of a phenomenological model. Contributions to the subsurface compositional changes from radiation-enhanced diffusion and radiation- induced segregation are clearly identified.

Ar+ Induced Interfacial Mixinc in the Pd/Cu Bilayer System

1989 ◽  
Vol 157 ◽  
Author(s):  
H.K. Kim ◽  
J.H. Song ◽  
S.K. Kim ◽  
K. Jeong ◽  
C.N. Whang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Layer By Layer ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Bilayer System ◽  
Radiation Enhanced Diffusion

ABSTRACTIon beam mixing of a Pd/Cu bilayer is studied using irradiation with 80 keV Ar+ ions at room temperature. RBS analysis shows that intermixing has occurred across the Pd/Cu interface, and that the mixing amount increases with increasing ion dose, which agrees well with a model for radiation enhanced diffusion. It is found that the Cu3Pd phase grows in a layer-by-layer manner.

scholarly journals Ion-Beam Mixing in Amorphous and Crystalline Fe-Ti

1988 ◽  
Vol 128 ◽  
Author(s):  
Udo Scheuer ◽  
Lynn E. Rehn ◽  
Pete Baldo
Keyword(s):  
Amorphous Materials ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Rutherford Back Scattering ◽  
Enhanced Diffusion ◽  
Voltage Electron ◽  
Radiation Enhanced Diffusion ◽  
Bcc Phase ◽  
Ti Films

ABSTRACTCrystalline Fe and Fe-10at.%Ti and amorphous Fe-37at.%Ti films with Ag and Hf markers were produced by vapor deposition. Marker spreading during ion-beam mixing between 77 K and 580 K was measured using Rutherford Back-scattering (RBS). Marker spreading was also measured between temperatures of 300 K to 700 K after full crystallization of the Fe-37at.%Ti films. Microstructural changes during ion-beam mixing were studied in situ, in a High-Voltage Electron Microscope. Homogeneous nucleation of a metastable bcc phase, was observed at high temperatures. The results are discussed in terms of their relevance to “radiation-enhanced” diffusion in amorphous materials.

Solid-state amorphization, interdiffusion, and ion-beam mixing in Au/Zr and Ni/Zr

1989 ◽  
Vol 4 (6) ◽  
pp. 1444-1449 ◽  
Author(s):  
Fu-Rong Ding ◽  
P. R. Okamoto ◽  
L. E. Rehn
Keyword(s):  
Solid State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Bilayer Films ◽  
Voltage Electron ◽  
Radiation Enhanced Diffusion

Inert-gas markers, Rutherford backscattering, and x-ray diffraction were used to investigate solid-state interdiffusion in Ni/Zr and Au/Zr bilayer films as a function of temperature; microstructural studies during annealing were performed in situ, in a high-voltage electron microscope. Au, in contrast to Ni, is not an anomalously fast diffuser in crystalline Zr. Nevertheless, an amorphous product phase was found in both alloy systems for reaction temperatures  550 K; heterogeneous nucleation of the amorphous phase was observed in Au/Zr. The interdiffusion data reveal two distinct Arrhenius regimes, 330–∼470 K and ∼480–550 K, with quite different apparent activation enthalpies. These thermal interdiffusion results are compared with temperature dependent studies of ion-beam mixing in similar bilayer specimens. This comparison indicates that the enhanced efficiencies observed for ion-beam mixing above ∼480 K result from the as-prepared metastable microstructurc, and are not due to radiation-enhanced diffusion.

Bombardment-Induced Mixing of Mo Films on Si

1985 ◽  
Vol 54 ◽  
Author(s):  
AH. Van Ommen ◽  
M.F.C. Willemsen ◽  
PR. Boudewijn ◽  
A. H. Reader
Keyword(s):  
Elevated Temperature ◽  
Layer Thickness ◽  
Mixed Layer ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Dominant Mechanism ◽  
Enhanced Diffusion ◽  
Implantation Temperature ◽  
Radiation Enhanced Diffusion

ABSTRACTWe studied ion beam mixing of thin Mo films on monocrystalline Si by As “implantation at room temperature. The results differ significantly from those obtained for implantation at elevated temperature (T > 200°C). where ion beam mixing results in hexagonal MoSi2 formation. Room temperature implantation results in the formation of an amorphous mixed layer. The composition of this layer varies with depth from Mo-rich to Si-rich. The mixed layer thickness increases linearly with implanted dose and energy. An increase of the implantation temperature with 100°C gives rise to a factor of 2 larger mixed layer thickness and to the formation of amorphous MoSi2 near the interface with Si. These phenomena indicate that at elevated temperature ion beam mixing is controlled by radiation-enhanced diffusion whereas, at room temperature ballistic mixing is the dominant mechanism.

Ion beam mixing and radiation enhanced diffusion in metal/ceramic interfaces

1996 ◽  
pp. 589-596
Author(s):  
K. Neubeck ◽  
C.-E. Lefaucheur ◽  
H. Hahn ◽  
A.G. Balogh ◽  
H. Baumann ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Metal Ceramic ◽  
Ceramic Interfaces

Ion beam mixing, diffusion, and phase stability in Cu/Al2O3 interfaces

1996 ◽  
Vol 11 (5) ◽  
pp. 1277-1283 ◽  
Author(s):  
K. Neubeck ◽  
H. Hahn ◽  
A. G. Balogh ◽  
H. Baumann ◽  
K. Bethge ◽  
...  
Keyword(s):  
Phase Stability ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Temperature Diffusion ◽  
Sputtering Yields ◽  
Concentration Depth Profiles ◽  
Diffusion Properties

Ion beam mixing, diffusion properties, and phase stability have been investigated in Cu/Al2O3 bilayer samples. Specimens were prepared by vapor deposition and irradiated with 150 keV Ar+ ions up to a fluence of 1.5 · 1017 Ar+/cm2. Sample temperature under irradiation was varied between 77 K and 673 K. The mixing behavior was studied by analyzing the concentration depth profiles, determined by Rutherford Backscattering Spectroscopy. It was found that mixing efficiencies of Cu, Al, and O scale with Ar+ fluence. Radiation enhanced diffusion (RED), observed above room temperature, is separated from ballistic mixing and high temperature diffusion. The migration enthalpy for interdiffusion in the RED region (between RT and 300 °C) was estimated to be approximately 0.3 eV. Sputtering yields depending on temperature gradient near to sample and phase stability versus ion dose and temperature are also discussed.

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