Preparation of BaTiO3 and PbTiO3 thin Films on BaPb3 Substrates by the SOL-GEL Method and Their Properties

1992 ◽  
Vol 271 ◽  
Author(s):  
M. KuWabAra ◽  
T. Kuroda ◽  
S. Takahashi ◽  
T. Azuma
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Lead Titanate ◽  
Room Temperature ◽  
Sol Gel ◽  
Ceramic Substrates ◽  
Gel Method ◽  
Sol Gel Method ◽  
Ceramic Thin Films ◽  
Titanate Lead

ABSTRACTBarium titanate, lead titanate and barium-lead titanate thin films were prepared by the sol-gel method using metal alkoxides on metallic conducting BaPbO3 ceramic substrates. Thin films were deposited on the polished surfaces of the substrates by spin coating solutions containing Ba(OC2H4OCH3)2, Pb(OCOCH3)2 and Ti(O-iC3H7)4 and methoxyethanol. The gel films were then fired at appropriate temperatures to yield ceramic thin films. A 0.50 µm-thick BaTio3 film showed a dielectric constant of 280 and tan ° of 3% at 1kHz with no distinguishable peak of dielectric constant at any temperature between 20°C and 200°C. Both PbTiO3 (0.75 µm thick) and Ba0.7Pb0.3 (0.2 µm thick) films, on the other hand, showed a distinguishable peak of dielectric constant at their Curie point with a rather deformed P-E hysteresis loop at room temperature.

Pyroelectric Properties of the Plt(10) Thin Film on the P-Doped Poly Silicon

1996 ◽  
Vol 433 ◽  
Author(s):  
Seong Jun Kang ◽  
Yung Sup Yoon ◽  
Dong Il Kim
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Curie Temperature ◽  
Room Temperature ◽  
Sol Gel ◽  
Pyroelectric Coefficient ◽  
Pyroelectric Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Poly Silicon

AbstractWe have studied the pyroelectric properties of the PLT(10) thin film deposited on a p-doped poly-Si electrode by using the sol-gel method. Measurement of the dielectric constant as a function of temperature shows the typical characteristics of a ferroelectric. The dielectric constant reaches a maximum at 295°C, which can be thought of as the Curie temperature. The PLT(10) thin film on p-doped poly-Si fabricated in this research shows excellent pyroelectric properties. The pyroelectric coefficient and the fiqures of merit, Fv and FD at room temperature are measured as 5.76 × 10−8 C/cm2 °C, 1.17 × 10−10C-cm/J and 0.93 × 10−8C-cm/J, respectively.

Room temperature ferromagnetism of Mn-doped SnO2 thin films fabricated by sol–gel method

2008 ◽  
Vol 254 (22) ◽  
pp. 7459-7463 ◽  
Author(s):  
Yuhua Xiao ◽  
Shihui Ge ◽  
Li Xi ◽  
Yalu Zuo ◽  
Xueyun Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sno2 Thin Films ◽  
Mn Doped

scholarly journals Room temperature photo-induced, Eu3+-doped IGZO transparent thin films fabricated using sol–gel method

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Rajagopalan Krishnan ◽  
Jagannathan Thirumalai ◽  
Rathinam Chandramohan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Room-temperature synthesis of crystalline barium titanate thin films by high-concentration sol–gel method

2000 ◽  
Vol 271 (1-2) ◽  
pp. 162-166 ◽  
Author(s):  
Hirofumi Matsuda ◽  
Nobuyuki Kobayashi ◽  
Takeshi Kobayashi ◽  
Kun’ichi Miyazawa ◽  
Makoto Kuwabara
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Room Temperature ◽  
Sol Gel ◽  
High Concentration ◽  
Temperature Synthesis ◽  
Gel Method ◽  
Sol Gel Method ◽  
Room Temperature Synthesis

Ferroelectricity of lanthanum-modified lead titanate thin films obtained by a diol-based sol-gel method

1999 ◽  
Vol 68 (5) ◽  
pp. 583-592 ◽  
Author(s):  
M. Algueró ◽  
M.L. Calzada ◽  
C. Quintana ◽  
L. Pardo
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Preparation of Nd and Co Co-Doped BiFeO3 Thin Films Co-Doping Nd and Co by Sol-Gel Method

2012 ◽  
Vol 512-515 ◽  
pp. 1249-1252 ◽  
Author(s):  
Xu Xue ◽  
Guo Qiang Tan ◽  
Hui Jun Ren ◽  
Meng Cheng
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Loss ◽  
Raw Materials ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Co Doping ◽  
Structure Morphology ◽  
Lcr Meter

BiFeO3 thin films co-doping Nd and Co were prepared on FTO/glass substrate by sol-gel method with Bi(NO3)3•5H2O, Fe•(NO3)3•9H2O, Nd(NO3)3•6H2O and Co(NO3)2•6H2O as raw materials, 2-methoxyethanol together with acetic anhydride as a solvent. XRD, FE-SEM, Agilent E4980A Precision LCR Meter and TF 2000 Ferroelectric Analyzer were used to characterize the structure, morphology, dielectric property and ferroelectric property of the BiFeO3 thin films. The results show that after Nd and Co co-doping, the BiFeO3 thin films still keep the perovskite structure. The crystal structure turns square or orthogonal from rhombus. The thickness of the BiFeO3 thin films is about 500nm and the grain size is 80nm to 30nm. BiFeO3 thin films co-doping Nd and Co have the larger dielectric constant and the lower dielectric loss compared with Nd doping. BiFeO3 thin films co-doping Nd10% and Co1% have the dielectric constant of over 170 and the dielectric loss of below 0.03. Both have the better frequency stability. Co-doping Nd and Co could decrease the coercive electric field of BiFeO3 thin films.

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