Integrated Heterostructure Devices (IHDS): A New Approach for the Fabrication of High-Efficiency Blue/Green Light Emitters Based on II-VI Materials

1992 ◽  
Vol 281 ◽  
Author(s):  
Y. Lansari ◽  
Z. Yu ◽  
J. Ren ◽  
C. Boney ◽  
J. W. Cook ◽  
...  
Keyword(s):  
Band Gap ◽  
High Efficiency ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Green Light ◽  
Wide Band ◽  
Light Emitters ◽  
Light Emitting ◽  
Type Layer ◽  
Heterostructure Devices

ABSTRACTIntegrated heterostructure devices (IHDs) comprised of II-VI materials in multi-layered structures for light emitting diode (LED) and laser diode (LD) applications are described. These IHDs combine a light emission multilayer structure (wide band gap II-VI layers) with an abrupt or graded heterostructure (comprised of narrow band gap II-VI layers) for improved ohmic contact to the upper p-type layer of the light emitting structure.

Visible Light Emission from Erbium Doped Yttria Stabilized Zirconia

2003 ◽  
Vol 789 ◽  
Author(s):  
Michael Cross ◽  
Walter Varhue
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Green Light ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Rare Earth Ion ◽  
Device Structure ◽  
Insulating Layer ◽  
Light Emitting ◽  
Erbium Doped

ABSTRACT: One of the major shortcomings of silicon (Si) as a semiconductor material is its inability to yield efficient light emission. There has been a continued interest in adding rare earth ion impurities such as erbium (Er) to the Si lattice to act as light emitting centers. The low band gap of Si however has complicated this practice by quenching and absorbing this possible emission. Increasing the band gap of the host has been successfully tried in the case of gallium nitride (GaN) [1] and Si-rich oxide (SRO) [2] alloys. A similar approach has been tried here, where Er oxide (ErOx) nanocrystals have been formed in a yttria stabilized zirconia (YSZ) host deposited on a Si (100) substrate. The YSZ is deposited as a heteroepitaxial, insulating layer on the Si substrate by a reactive sputtering technique. The Er is also incorporated by a sputtering process from a metallic target and its placement in the YSZ host can be easily controlled. The device structure formed is a simple metal contact/insulator/phosphor sandwich. The device has been found to emit visible green light at low bias voltages. The advantage of this material is that it is much more structured than SiO2 which can theoretically lead to higher emission intensity.

scholarly journals Highly Stable and Bright Blue Light-Emitting Diodes Based on Carbon Dots with Chemically Inert Surface

2021 ◽  
Author(s):  
Tianyang Zhang ◽  
Xiao Wang ◽  
Zhenyu Wu ◽  
Tianyu Yang ◽  
Han Zhao ◽  
...  
Keyword(s):  
Band Gap ◽  
Blue Light ◽  
Organic Semiconductors ◽  
Carbon Dots ◽  
Light Emitting Diode ◽  
Wide Band ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Inert Surface ◽  
Bright Blue

Blue light-emitting diode (LED) has always been a tough problem for the display and illumination. Inorganic/organic semiconductors and carbon dots (CDs) with wide band gap still undergo the obstacles of...

CsPbBr3–Cs4PbBr6 composite nanocrystals for highly efficient pure green light emission

Nanoscale ◽  
2019 ◽  
Vol 11 (47) ◽  
pp. 22899-22906 ◽  
Author(s):  
Miao He ◽  
Chunyun Wang ◽  
Jingzhou Li ◽  
Jiang Wu ◽  
Siwei Zhang ◽  
...  
Keyword(s):  
Light Emission ◽  
Light Emitting Diode ◽  
Solution Process ◽  
Green Light ◽  
Inert Gas ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Highly Efficient ◽  
Green Light Emission

All-inorganic perovskite CsPbBr3–Cs4PbBr6 composite nanocrystals (NCs) were synthesized via a convenient solution process without inert gas protection and systematically studied as green phosphors for light emitting diode (LED) applications.

scholarly journals Phosphorescent Molecularly Doped Light-Emitting Diodes with Blended Polymer Host and Wide Emission Spectra

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Jun Wang ◽  
Jun Gou ◽  
Weizhi Li
Keyword(s):  
Power Efficiency ◽  
High Efficiency ◽  
Light Emission ◽  
Green Light ◽  
Emission Spectra ◽  
Iridium Complex ◽  
Light Emitting ◽  
Host Materials ◽  
Green Light Emission ◽  
Organic Devices

Stable green light emission and high efficiency organic devices with three polymer layers were fabricated using bis[2-(4′-tert-butylphenyl)-1-phenyl-1H-benzoimidazole-N,C2′] iridium(III) (acetylacetonate) doped in blended host materials. The 1 wt% doping concentration showed maximum luminance of 7841 cd/cm2at 25.6 V and maximum current efficiency of 9.95 cd/A at 17.2 V. The electroluminescence spectra of devices indicated two main peaks at 522 nm and 554 nm coming from phosphor dye and a full width at half maximum (FWHM) of 116 nm. The characteristics of using blended host, doping iridium complex, emission spectrum, and power efficiency of organic devices were investigated.

Ca3Sc2Si3O12:1%Ce3+, x%Ba2+ Green Phosphors for White Light-Emitting Diodes

2012 ◽  
Vol 557-559 ◽  
pp. 776-780
Author(s):  
Yi Bo Chen ◽  
Wei Cai ◽  
Yong Qiao Liu ◽  
Meng Lian Gong
Keyword(s):  
High Efficiency ◽  
Light Emitting Diode ◽  
Green Light ◽  
Prepared Phosphor ◽  
Temperature Quenching ◽  
Solid State Method ◽  
Light Emitting ◽  
White Leds ◽  
Co Doping ◽  
White Light Emitting Diodes

Low temperature-quenching and high-efficiency Ca3Sc2Si3O12:1%Ce3+, x%Ba2+ phosphors were prepared by solid state method and the properties of these phosphors were investigated. The results showed that co-doping of Ba2+ ions can improve the photoluminescence properties and decrease temperature-quenching of Ca3Sc2Si3O12:Ce3+ phosphor obviously. High-efficiency blue-green light-emitting diode was fabricated with the prepared phosphor and an InGaN blue-emitting (~460 nm) chip. Good performance of the prepared LED indicates that Ca3Sc2Si3O12:1%Ce3+, 0.5%Ba2+ phosphor is a suitable candidate for the fabrication of high-efficiency white LEDs.

High Efficiency Bulk Crystalline Silicon Light Emitting Diodes

2002 ◽  
Vol 744 ◽  
Author(s):  
Jianhua Zhao ◽  
Aihua Wang ◽  
Thorsten Trupke ◽  
Martin A. Green
Keyword(s):  
Power Efficiency ◽  
High Performance ◽  
High Efficiency ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Collection Efficiency ◽  
Light Emitting Diode ◽  
Coupled System ◽  
High Power Conversion Efficiency ◽  
Light Emitting

ABSTRACTA high power conversion efficiency above 1% from a bulk crystalline silicon (c-Si) light-emitting diode (LED) has been demonstrated at near room temperature. These devices are based on normally weak one- and two-phonon assisted sub-bandgap light emission processes. Their improved performance results from device designs that take advantage of enhanced light absorption by a light trapping scheme which was developed for high efficiency silicon solar cells, and from reducing scope for parasitic non-radiative recombination within the diode. Each feature individually is shown to improve efficiency by a factor of ten, accounting for an improvement by factor of one hundred compared to baseline devices.Also demonstrated is a greatly improved band-edge light emission and detection using bulk c-Si diodes. A bulk c-Si LED is combined with a similar diode used as a detector that collects the light emitted with a high quantum collection efficiency of 33%, to produce a silicon to silicon optically coupled system that demonstrates 0.18% coupling quantum efficiency. The crystalline silicon LED demonstrates similarly high performance at very low power levels, where it has even higher power efficiency than a high efficiency GaAlAs LED.

Synthesis and high efficiency green light-emitting diode of a soluble polymer

1997 ◽  
Vol 91 (1-3) ◽  
pp. 321-322 ◽  
Author(s):  
Zhiyong Hong ◽  
Daike Wang ◽  
Dongge Ma ◽  
Xiaojiang Zhao ◽  
Xiabin Jing ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diode ◽  
Green Light ◽  
Soluble Polymer ◽  
Light Emitting
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