Porous Silicon-Based Optoelectronic Devices: Processing and Characterization

1992 ◽  
Vol 283 ◽  
Author(s):  
Nader M. Kalkhoran
Keyword(s):  
Porous Silicon ◽  
Light Emitting Diode ◽  
Optoelectronic Devices ◽  
Porous Si ◽  
Light Emitting ◽  
Anodic Etching ◽  
Wafer Scale Integration ◽  
Scale Integration ◽  
Silicon Based ◽  
Better Than

ABSTRACTA patterning process compatible with conventional Si electronics technology, which has resolution better than 5 μm, has been developed in order to perform selected-area anodic etching for producing luminescent porous Si layers (PSL). Correlations between the anodic etching and photolithographic parameters have been identified, and their effects on the resolution and luminescence of porous Si layers have been studied. Finally, the first monolithic processing, i.e., true wafer-scale integration, of a Si-based visible light-emitting diode (LED) and a photodetector using conventional Si technology has been demonstrated.

Fabrication Process of Porous Silicon-Based Optoelectronic Devices

1992 ◽  
Vol 281 ◽  
Author(s):  
Nader M. Kalkhoran
Keyword(s):  
Porous Silicon ◽  
Light Emitting Diode ◽  
Optoelectronic Devices ◽  
Porous Si ◽  
Light Emitting ◽  
Anodic Etching ◽  
Wafer Scale Integration ◽  
Scale Integration ◽  
Silicon Based ◽  
Better Than

ABSTRACTA patterning process compatible with conventional Si electronics technology, which has resolution better than 5 μm, has been developed in order to perform selected-area anodic etching for producing luminescent porous Si layers (PSL). Correlations between the anodic etching and photolithographic parameters have been identified, and their effects on the resolution and luminescence of porous Si layers have been studied. Finally, the first monolithic processing, i.e.,. true wafer-scale integration, of a Si-based visible light-emitting diode (LED) and a photodetector using conventional Si technology has been demonstrated.

Investigation of silicon-based light emitting diode sub-mounts: Enhanced performance and potential for improved reliability

2015 ◽  
Vol 31 ◽  
pp. 604-610 ◽  
Author(s):  
Shih-Chieh Tseng ◽  
Chao-Wei Tang ◽  
Hsueh-Chuan Liao ◽  
Kuan-Ming Li ◽  
Hong-Tsu Young
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Silicon Based

Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-Rays Irradiation

2010 ◽  
Vol 173 ◽  
pp. 1-6 ◽  
Author(s):  
Haider F. Abdul Amir ◽  
Fuei Pien Chee
Keyword(s):  
Ionizing Radiation ◽  
Light Emitting Diode ◽  
Optoelectronic Devices ◽  
Third Party ◽  
Infrared Light ◽  
X Rays ◽  
Total Ionizing Dose ◽  
Light Emitting ◽  
Static Performance ◽  
Current Drives

In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation.

Silicon-based light emitting diode material studied under high pressure

2004 ◽  
Vol 241 (14) ◽  
pp. 3387-3390 ◽  
Author(s):  
A. D. Prins ◽  
Y. Ishibashi ◽  
S. Sasahara ◽  
J. Nakahara ◽  
M. A. Lourenco ◽  
...  
Keyword(s):  
High Pressure ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Silicon Based

ChemInform Abstract: An Efficient Room-Temperature Silicon-Based Light-Emitting Diode.

ChemInform ◽  
2010 ◽  
Vol 32 (25) ◽  
pp. no-no
Author(s):  
Wai Lek Ng ◽  
M. A. Lourenco ◽  
R. M. Gwilliam ◽  
S. Ledain ◽  
G. Shao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Silicon Based

Fabrication of Luminescent Porous Silicon with Stain Etches and Evidence that Luminescence Originates in Amorphous Layers

1991 ◽  
Vol 256 ◽  
Author(s):  
R. W. Fathauer ◽  
T. George ◽  
A. Ksendzov ◽  
T. L. lin ◽  
W. T. Pike ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Anodic Oxidation ◽  
Oxidation Reaction ◽  
Porous Si ◽  
Anodic Etching ◽  
Si Films

Stain films on Si wafers produced in solutions of HF:HNO3:H2O have been studied for over 30 years [1], and have been suggested [1] to be similar in nature to the anodically-etched porous Si films first demonstrated by Uhlir [2]. More recently, it was shown that stain films produced by etching Si in solutions of NaNO2 in HF and CrO3 in HF were similar in structure to porous Si films produced by anodic etching [3]. In fact, in the etching of Si by HF:HNO3:H3O solutions, the oxidation reaction chemistry is recognized to be the same as that of anodic oxidation, with points on the Si surface behaving randomly as localized anodes and cathodes [4]

Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

2013 ◽  
Vol 686 ◽  
pp. 49-55
Author(s):  
M. Ain Zubaidah ◽  
N.A. Asli ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Visible Range ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

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