Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-Rays Irradiation

2010 ◽  
Vol 173 ◽  
pp. 1-6 ◽  
Author(s):  
Haider F. Abdul Amir ◽  
Fuei Pien Chee
Keyword(s):  
Ionizing Radiation ◽  
Light Emitting Diode ◽  
Optoelectronic Devices ◽  
Third Party ◽  
Infrared Light ◽  
X Rays ◽  
Total Ionizing Dose ◽  
Light Emitting ◽  
Static Performance ◽  
Current Drives

In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation.

Heat-resistant reflectors for enhanced 850-nm near infrared light-emitting diode efficiency

2021 ◽  
pp. 103879
Author(s):  
Hyung-Joo Lee ◽  
Gwang-Hoon Park ◽  
Jin-Su So ◽  
Choong-Hun Lee ◽  
Jae-Hoon Kim ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting ◽  
Heat Resistant

scholarly journals An in vitro of radiation dose enhancement using gold nanorods and plasmonic photothermal therapy

2021 ◽  
Author(s):  
Daniel DiCenzo DiCenzo
Keyword(s):  
Radiation Dose ◽  
Ionizing Radiation ◽  
Gold Nanorods ◽  
Near Infrared ◽  
Infrared Light ◽  
Nuclear Localization Sequence ◽  
X Rays ◽  
Dose Enhancement ◽  
Near Infrared Light ◽  
Pc3 Cells

Gold nanoparticles (GNP) have been shown to highly absorb ionizing radiation compared to tissue. GNPs have also been shown to be high absorbers of non-ionizing radiation with a peak absorbance at a wavelength dependent on their shape and size. This study investigated radiation dose enhancement in PC3 cells when in the presence of gold nanorods (NR) and near infrared light (IR). The PC3 cells were incubated with either PEGylated NRs (PNR) or anti prostate stem cell antigen antibody with nuclear localization sequence peptide conjugated NRs (AbNR). They were exposed to near infrared light at a wavelength of 810 nm to achieve a temperature of 42 ºC to 43 ºC for 60 minutes. They were also exposed to 160 kVp x-rays. It was found that both targeted and non-targeted GNPs when exposed to radiation and near infrared light synergistically enhanced radiation dose. It was also found that AbNRs provide greater dose enhancement than PNRs.

Transcranial, Red/Near-Infrared Light-Emitting Diode Therapy to Improve Cognition in Chronic Traumatic Brain Injury

2016 ◽  
Vol 34 (12) ◽  
pp. 610-626 ◽  
Author(s):  
Margaret A. Naeser ◽  
Paula I. Martin ◽  
Michael D. Ho ◽  
Maxine H. Krengel ◽  
Yelena Bogdanova ◽  
...  
Keyword(s):  
Traumatic Brain Injury ◽  
Brain Injury ◽  
Near Infrared ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting

Near-Infrared Light Emitting Diode Based Non-Invasive Glucose Detection System

2019 ◽  
Vol 19 (10) ◽  
pp. 6187-6191 ◽  
Author(s):  
Seung Ho Lee ◽  
Min Seok Kim ◽  
Ok-Kyun Kim ◽  
Hyung-Hwan Baik ◽  
Ji-Hye Kim
Keyword(s):  
Near Infrared ◽  
Detection System ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Glucose Detection ◽  
Near Infrared Light ◽  
Light Emitting ◽  
Non Invasive

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design

2019 ◽  
Vol 15 (2) ◽  
pp. 113-116 ◽  
Author(s):  
Hong-liang Lin ◽  
Xiang-hua Zeng ◽  
Shi-man Shi ◽  
Hai-jun Tian ◽  
Mo Yang ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Infrared Light ◽  
Light Emitting

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Nanoscale ◽  
2020 ◽  
Vol 12 (22) ◽  
pp. 11784-11807 ◽  
Author(s):  
Changyong Lan ◽  
Zhe Shi ◽  
Rui Cao ◽  
Chun Li ◽  
Han Zhang
Keyword(s):  
2D Materials ◽  
Optoelectronic Devices ◽  
Infrared Light ◽  
Optical Modulators ◽  
Light Emitting ◽  
Light Emitting Devices

A study of typical 2D materials beyond graphene suitable for infrared applications, in particular, infrared light emitting devices, optical modulators, and photodetectors.

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