Study of Photo-Induced Thin Film Growth on Cds Substrates.*

1983 ◽  
Vol 29 ◽  
Author(s):  
C. Arnone ◽  
C. Call' ◽  
S. Riva-Sanseverino
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Single Crystal ◽  
Absorption Edge ◽  
Film Growth ◽  
Thin Film Growth ◽  
Amorphous Thin Film ◽  
Maximum Light

ABSTRACTPhoto-induced growth of ZnS on CdS has been studied using amorphous (thin film) and single-crystal substrates. The effect has been found to occur for light of wavelength shorter than the CdS absorption edge; a maximum light-induced thickness enhancement of 700 Å has been obtained for the ZnS film, with a growth rate of 2000 Å/min. The lightinduced growth, with its observed “memory” of several minutes is consistent with photo-desorption of an adlayer.

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth

Effects of Tris(tert-pentoxy)silanol Purge Time on SiO2 Thin-Film Growth Rate in Rapid Atomic Layer Deposition

2013 ◽  
Vol 2 (10) ◽  
pp. P91-P93 ◽  
Author(s):  
J. R. Kim ◽  
H. Lim ◽  
S. Park ◽  
Y. J. Choi ◽  
S. Suh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Film Growth Rate ◽  
Sio2 Thin Film ◽  
Layer Deposition

scholarly journals Amorphous thin-film growth: Theory compared with experiment

2000 ◽  
Vol 50 (1) ◽  
pp. 61-67 ◽  
Author(s):  
M Raible ◽  
S. G Mayr ◽  
S. J Linz ◽  
M Moske ◽  
P Hänggi ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Growth Theory ◽  
Amorphous Thin Film
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