Synthesis and properties of 12CaO · 7Al2O3electride: review of single crystal and thin film growth

ABSTRACTPhoto-induced growth of ZnS on CdS has been studied using amorphous (thin film) and single-crystal substrates. The effect has been found to occur for light of wavelength shorter than the CdS absorption edge; a maximum light-induced thickness enhancement of 700 Å has been obtained for the ZnS film, with a growth rate of 2000 Å/min. The lightinduced growth, with its observed “memory” of several minutes is consistent with photo-desorption of an adlayer.

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Ion Thinning of Electron Transparent Single Crystal Sapphire Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100052353 ◽

1974 ◽

Vol 32 ◽

pp. 468-469

Author(s):

J. L. Kenty ◽

R. E. Johnson

Keyword(s):

Thin Film ◽

Single Crystal ◽

Film Growth ◽

Ion Beam ◽

Thin Film Growth ◽

Sapphire Substrates ◽

Single Crystal Sapphire ◽

Growth Experiments

Samples of single crystal sapphire (α-Al2O3) have been ion-beam thinned to yield electron transparent regions suitable for use as substrates for in situ thin film growth experiments. Routine fabrication of 1 mm dia. samples containing one or more thin (∼200Å) regions ∼10μm2 in area was possible. The samples were surprisingly robust, many surviving post-thinning subdivision, mounting into a TEM environment cell, and heating to ∼1200°C.

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Scanning force microscopy study of single-crystal substrates used for thin-film growth of high-temperature superconductors

Physica C Superconductivity ◽

10.1016/0921-4534(94)02414-6 ◽

1995 ◽

Vol 242 (1-2) ◽

pp. 174-182 ◽

Cited By ~ 47

Author(s):

R. Sum ◽

H.P. Lang ◽

H.-J. Güntherodt

Keyword(s):

Thin Film ◽

High Temperature ◽

Single Crystal ◽

Film Growth ◽

High Temperature Superconductors ◽

Scanning Force Microscopy ◽

Microscopy Study ◽

Thin Film Growth ◽

Force Microscopy ◽

Scanning Force

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Atomic force microscopy studies of the surface morphology of annealed single crystal substrates and substrate annealing effects on the YBa2Cu3O7-x thin film growth

Electron Microscopy and Analysis 1997 ◽

10.1201/9781003063056-53 ◽

2022 ◽

pp. 205-208

Author(s):

Y C Fan ◽

A G Fitzgerald ◽

H C Xu ◽

B E Storey ◽

A O Tooke ◽

...

Keyword(s):

Thin Film ◽

Atomic Force Microscopy ◽

Surface Morphology ◽

Single Crystal ◽

Film Growth ◽

Thin Film Growth ◽

Force Microscopy ◽

Atomic Force ◽

Annealing Effects ◽

Substrate Annealing

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Single-crystal thin-film growth of LiNbO3 for electrooptic modulator by rf sputtering method and its properties

Electrical Engineering in Japan ◽

10.1002/eej.4390990601 ◽

1979 ◽

Vol 99 (6) ◽

pp. 1-9

Author(s):

Toshiharu Kamiya ◽

Yasumitsu Miyazaki ◽

Yasuo Akao

Keyword(s):

Thin Film ◽

Single Crystal ◽

Film Growth ◽

Rf Sputtering ◽

Thin Film Growth ◽

Electrooptic Modulator

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CO2 Laser Crystallization of Silicon on Bulk Fused Silica

MRS Proceedings ◽

10.1557/proc-4-529 ◽

1981 ◽

Vol 4 ◽

Author(s):

William G. Hawkins ◽

Jerry G. Black ◽

Clifford H. Griffiths

Keyword(s):

Thin Film ◽

Thermal Stress ◽

Laser Beam ◽

Single Crystal ◽

Film Growth ◽

Fused Silica ◽

Thin Film Growth ◽

Recrystallization Process ◽

Laser Crystallization ◽

Oriented Single Crystal

ABSTRACTA CO2 laser beam was used to heat bulk fused silica which had previously defined Si3N4 and Si02 encapsulated LPCVD polysilicon islands (25,μm × 100μm) on its surface. The recrystallization process produces single crystal islands under a wide variety of laser treatment parameters. Under certain conditions, the recrystallized islands exhibit a (100) plane parallel to the substrate. These results are the first demonstration of oriented single crystal thin film growth using island predefinition, which eliminates thermal stress induced microcracking resulting from the mismatch in expansion between silicon and bulk fused silica.

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