Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth

Study of Photo-Induced Thin Film Growth on Cds Substrates.*

1983 ◽  
Vol 29 ◽  
Author(s):  
C. Arnone ◽  
C. Call' ◽  
S. Riva-Sanseverino
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Single Crystal ◽  
Absorption Edge ◽  
Film Growth ◽  
Thin Film Growth ◽  
Amorphous Thin Film ◽  
Maximum Light

ABSTRACTPhoto-induced growth of ZnS on CdS has been studied using amorphous (thin film) and single-crystal substrates. The effect has been found to occur for light of wavelength shorter than the CdS absorption edge; a maximum light-induced thickness enhancement of 700 Å has been obtained for the ZnS film, with a growth rate of 2000 Å/min. The lightinduced growth, with its observed “memory” of several minutes is consistent with photo-desorption of an adlayer.

Ion Thinning of Electron Transparent Single Crystal Sapphire Substrates

1974 ◽  
Vol 32 ◽  
pp. 468-469
Author(s):  
J. L. Kenty ◽  
R. E. Johnson
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Sapphire Substrates ◽  
Single Crystal Sapphire ◽  
Growth Experiments

Samples of single crystal sapphire (α-Al2O3) have been ion-beam thinned to yield electron transparent regions suitable for use as substrates for in situ thin film growth experiments. Routine fabrication of 1 mm dia. samples containing one or more thin (∼200Å) regions ∼10μm2 in area was possible. The samples were surprisingly robust, many surviving post-thinning subdivision, mounting into a TEM environment cell, and heating to ∼1200°C.

CO2 Laser Crystallization of Silicon on Bulk Fused Silica

1981 ◽  
Vol 4 ◽  
Author(s):  
William G. Hawkins ◽  
Jerry G. Black ◽  
Clifford H. Griffiths
Keyword(s):  
Thin Film ◽  
Thermal Stress ◽  
Laser Beam ◽  
Single Crystal ◽  
Film Growth ◽  
Fused Silica ◽  
Thin Film Growth ◽  
Recrystallization Process ◽  
Laser Crystallization ◽  
Oriented Single Crystal

ABSTRACTA CO2 laser beam was used to heat bulk fused silica which had previously defined Si3N4 and Si02 encapsulated LPCVD polysilicon islands (25,μm × 100μm) on its surface. The recrystallization process produces single crystal islands under a wide variety of laser treatment parameters. Under certain conditions, the recrystallized islands exhibit a (100) plane parallel to the substrate. These results are the first demonstration of oriented single crystal thin film growth using island predefinition, which eliminates thermal stress induced microcracking resulting from the mismatch in expansion between silicon and bulk fused silica.

YBa2Cu3O7−x Thin Film Growth on Single Crystal and Polycrystalline Yttria-Stabilized Zirconia

1990 ◽  
pp. 157-165
Author(s):  
David P. Norton ◽  
Douglas H. Lowndes ◽  
D. K. Christen ◽  
E. C. Jones ◽  
J. D. Budai ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Yttria Stabilized Zirconia ◽  
Thin Film Growth ◽  
Stabilized Zirconia

Single-Crystal Thin-Film Growth and Properties of BaPb1-xBixO3

1985 ◽  
Vol 24 (S2) ◽  
pp. 323 ◽  
Author(s):  
Toshiaki Murakami ◽  
Minoru Suzuki
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth

Thin film growth

2011 ◽  
Author(s):  
Zexian Cao
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth
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