Donor–Doped Lead Zirconate Titanate (PbZr1−xTixO3) Films

1993 ◽  
Vol 335 ◽  
Author(s):  
Seshu B. Desu ◽  
Dilip P. Vijay ◽  
In K. Yoo
Keyword(s):  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Ferroelectric Films ◽  
Leakage Currents ◽  
Low Leakage ◽  
Zirconate Titanate ◽  
Switchable Polarization

AbstractProperties of undoped– and doped–ferroelectric PbZr1−xTixO3. films, with both Pt or RuO2 electrodes, were compared, with a view to understand the reasons for degradation of ferroelectric films. Donor–doped (e.g., Nb5+ at Ti4+ site) PbZr1−xTixO3 films, for which the PbO loss has been compensated, showed higher resistance to fatigue and low leakage currents compared to those of undoped films. The fatigue of ferroelectric films, a decrease in switchable polarization with increasing number of polarization reversals, has been attributed to the migration of oxygen vacancies and their entrapment at various interfaces (e.g., electrode/ferroelectric interface) that are present in the film.

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Unveiling Center‐Type Topological Defects on Rosettes of Lead Zirconate Titanate Associated to Oxygen Vacancies

2021 ◽  
pp. 2100219
Author(s):  
Itamar T. Neckel ◽  
Francisco M. C. da Silva ◽  
Eduardo B. Guedes ◽  
Carlos S. B. Dias ◽  
Marcio M. Soares ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Topological Defects ◽  
Lead Zirconate ◽  
Zirconate Titanate

Ageing and fatigue of lead titanate and lead zirconate titanate thin ferroelectric films

2010 ◽  
Vol 12 (3) ◽  
pp. 302-306 ◽  
Author(s):  
Andrey Sidorkin ◽  
Lolita Nesterenko ◽  
Alexander Sidorkin ◽  
Stanislav Ryabtsev ◽  
Galina Bulavina
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Titanate ◽  
Lead Zirconate ◽  
Ferroelectric Films ◽  
Zirconate Titanate

First Principles’ Investigation of Electronic Properties of Hf, Ag, Cd, Zn, Ce, Nd, Sm-Modified Lead Zirconate Titanate

2016 ◽  
Vol 13 (10) ◽  
pp. 7661-7665
Author(s):  
R. A Hussein ◽  
M El-Okr ◽  
I. I Bashter ◽  
M Ibrahim
Keyword(s):  
Electronic Properties ◽  
Lead Zirconate Titanate ◽  
First Principles ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Energy State ◽  
Fatigue Behavior ◽  
Lead Zirconate ◽  
Theoretical Explanation ◽  
Zirconate Titanate

First principles investigations, including density functional theory (DFT) have been applied to calculate the electronic properties of A-site modified lead zirconate titanate (PZT). The theoretical explanation for the origin of fatigue in ferroelectric perovskite oxides was implemented to study the fatigue behavior. The explanation indicates that, the fatigue is related to the weakness of π bond between Ti 3d and O 2p states, caused by the occupancy of the Ti 3d state by electrons which released from oxygen vacancies. If a certain energy state of the additive element founded to be overlapped with the Ti 3d state at conduction band minima, then it will sharing the electrons released by oxygen vacancies with the Ti 3d state. Therefore, when the Ti 3d state become less occupied with electrons the π bond between the Ti 3d and O 2p states become more maintained and the composition is less susceptible to fatigue.

Peculiarities of crystallization of thin ferroelectric films of lead zirconate titanate

2011 ◽  
Vol 37 (2) ◽  
pp. 163-165 ◽  
Author(s):  
I. Yu. Tentilova ◽  
S. A. Kukushkin ◽  
E. Yu. Kaptelov ◽  
I. P. Pronin ◽  
V. L. Ugolkov
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Ferroelectric Films ◽  
Zirconate Titanate

The Effects of Lead-Compensation and Thermal Processing on the Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Films

1991 ◽  
Vol 230 ◽  
Author(s):  
Vinay Chikarmane ◽  
Chandra Sudhama ◽  
Jiyoung Kim ◽  
Jack Lee ◽  
A I Tasch
Keyword(s):  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Large Scale ◽  
Random Access ◽  
Lead Zirconate ◽  
Thermal Budget ◽  
Low Leakage ◽  
Zirconate Titanate ◽  
Low Leakage Current ◽  
Scale Integration

AbstractThe feasibility of the fabrication of thin film capacitors of Lead Zirconate Titanate (PZT) by reactive DC-Magnetron sputtering, with large switched charge and low leakage current densities for ultra-large scale integration Dynamic Random Access Memory (ULSI DRAM) applications has been demonstrated. As-deposited films were found to be predominantly pyrochlore; therefore, a subsequent phase transformation-inducing thermal processing step was key to obtaining device quality films. The importance of the thermal budget in optimizing the device characteristics of PZT films is discussed. The importance of the role of Pb compensation in lowering the required thermal budget and significantly enhancing device characteristics is shown.

Sign in / Sign up

Export Citation Format

Share Document