Color Document Imaging with Amorphous Silicon Sensor Arrays

1994 ◽  
Vol 336 ◽  
Author(s):  
R. A. Street ◽  
X. D. Wu ◽  
R. Weisfield ◽  
S. Nelson ◽  
P. Nylen

ABSTRACTWe describe the performance of an amorphous silicon imaging system designed for high speed (>10 frames/sec) scanning of a document. The system comprises a new page-sized sensor array with 1536×1920 pixels, an illumination source, and the readout electronics. With appropriate color filters, one can achieve color imaging of a document without the registration problems associated with linear scanners. We describe the color imaging properties and discuss how the color response, sensitivity and uniformity depend on the properties of the amorphous silicon sensors.

1995 ◽  
Vol 377 ◽  
Author(s):  
R. A. Street ◽  
X. D. Wu ◽  
R. Weisfield ◽  
S. Ready ◽  
R. Apte ◽  
...  

ABSTRACTLarge two dimensional amorphous silicon image sensor arrays offer a new approach to electronic document input and x-ray imaging. The sensor array technology is now capable of image capture at greater than 10 frames/sec and with resolution of 200–400 spi. We describe our new high resolution imaging system, comprising a page-sized sensor array with nearly 3 million pixels, and the accompanying high speed read out and processing electronics. The key technological issues of pixel resolution, sensor fill factor, leakage currents and noise are reviewed. Measurements of a new array architecture are described, in which the sensor is formed as a single continuous film on top of the matrix addressing components.


1995 ◽  
Vol 377 ◽  
Author(s):  
David K. Biegelsen ◽  
Warren B. Jackson ◽  
René Lujan ◽  
David Jared ◽  
Richard L. Weisfield

ABSTRACTThe human visual system perceives much smaller spatial steps in edges between high contrast regions than equivalents fine, periodic features. This characteristic is known as hyperacuity. We have designed, simulated, fabricated and characterized amorphous silicon sensors which provide hyperacuity information. The individual pixels are position sensitive detectors, the outputs of which provide the x and y first moments of the cell illumination pattern as well as the average gray level. In the simplest case the top electrode of a standard p-i-n diode sensor is replaced by four edge strip electrodes. Both quadrilateral cells (having all four lateral electrodes on the same side of the p-i-n diode) and duolateral cells (having x-electrodes on top and y-electrodes on bottom) have been tested. Results of probing the cells with rastered spots show that both types provide usable linearity and sensitivity. The duolateral structure provides greater orthogonality of the x and y information. One μm spatial resolution can be achieved with devices compatible with standard amorphous silicon sensor processing.


1997 ◽  
Vol 296 (1-2) ◽  
pp. 172-176 ◽  
Author(s):  
R.A. Street ◽  
R.L. Weisfield ◽  
R.B. Apte ◽  
S.E. Ready ◽  
A. Moore ◽  
...  

1992 ◽  
Vol 258 ◽  
Author(s):  
M J Powell ◽  
I D French ◽  
J R Hughes ◽  
N C Bird ◽  
O S Davies ◽  
...  

ABSTRACTWe have developed a technology for 2D matrix-addressed image sensors using amorphous silicon photodiodes and thin film transistors. We have built a small prototype, having 192×192 pixels with a 20μm pixel pitch, and assessed its performance. The nip photodiodes can have dark current densities of less than 1011 A.cm-2 (up to 5V reverse bias) and peak quantum efficiencies of 88% (at 580nm). We operated the sensor in real time mode at high speed (50 Hz frame rate and 64μS line time). The image sensor has a low noise performance giving a dynamic range in excess of 104. The maximum crosstalk is about 2%, which allows at least 50 grey levels. The bottom contact of the photodiode acts as a light shield from light through the substrate, which enables the sensor to be operated as an intimate contact image sensor to image a document placed directly on top of the array. In this mode, the CTF was 75% at 2 lp.mm1. Good quality images are demonstrated in both front projection and intimate contact imaging modes.


1997 ◽  
Vol 487 ◽  
Author(s):  
R. A. Street ◽  
R. B. Apte ◽  
S. E. Ready ◽  
R. L. Weisfield ◽  
P. Nylen

AbstractLarge area amorphous silicon image sensor arrays are important for x-ray medical imaging and document scanning as well as a variety of other applications where large sensor size is required. The paper first summarizes the present state of the flat panel x-ray imager technology, and compares the two main approaches for x-ray detection. We then describe the performance of a new, large area, high resolution, radiographic imager based on a single amorphous silicon array with 2304×3200 pixels, and an active area of 30×40 cm (12×1 6”).


Author(s):  
Dennis Stanze ◽  
Thorsten Gobel ◽  
Born Globisch ◽  
Roman J.B. Dietz ◽  
Bernd Sartorius ◽  
...  

1983 ◽  
Vol 43 (7) ◽  
pp. 669-671 ◽  
Author(s):  
H. C. Webber ◽  
A. G. Cullis ◽  
N. G. Chew

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