Hyperacuity Image Sensors

1995 ◽  
Vol 377 ◽  
Author(s):  
David K. Biegelsen ◽  
Warren B. Jackson ◽  
René Lujan ◽  
David Jared ◽  
Richard L. Weisfield
Keyword(s):  
Amorphous Silicon ◽  
Image Sensors ◽  
Gray Level ◽  
Silicon Sensors ◽  
Sensor Processing ◽  
Position Sensitive ◽  
The Individual ◽  
Position Sensitive Detectors ◽  
Silicon Sensor ◽  
Average Gray Level

ABSTRACTThe human visual system perceives much smaller spatial steps in edges between high contrast regions than equivalents fine, periodic features. This characteristic is known as hyperacuity. We have designed, simulated, fabricated and characterized amorphous silicon sensors which provide hyperacuity information. The individual pixels are position sensitive detectors, the outputs of which provide the x and y first moments of the cell illumination pattern as well as the average gray level. In the simplest case the top electrode of a standard p-i-n diode sensor is replaced by four edge strip electrodes. Both quadrilateral cells (having all four lateral electrodes on the same side of the p-i-n diode) and duolateral cells (having x-electrodes on top and y-electrodes on bottom) have been tested. Results of probing the cells with rastered spots show that both types provide usable linearity and sensitivity. The duolateral structure provides greater orthogonality of the x and y information. One μm spatial resolution can be achieved with devices compatible with standard amorphous silicon sensor processing.

Color Document Imaging with Amorphous Silicon Sensor Arrays

1994 ◽  
Vol 336 ◽  
Author(s):  
R. A. Street ◽  
X. D. Wu ◽  
R. Weisfield ◽  
S. Nelson ◽  
P. Nylen
Keyword(s):  
Amorphous Silicon ◽  
High Speed ◽  
Imaging System ◽  
Sensor Arrays ◽  
Color Imaging ◽  
Silicon Sensors ◽  
Imaging Properties ◽  
Color Filters ◽  
Illumination Source ◽  
Silicon Sensor

ABSTRACTWe describe the performance of an amorphous silicon imaging system designed for high speed (>10 frames/sec) scanning of a document. The system comprises a new page-sized sensor array with 1536×1920 pixels, an illumination source, and the readout electronics. With appropriate color filters, one can achieve color imaging of a document without the registration problems associated with linear scanners. We describe the color imaging properties and discuss how the color response, sensitivity and uniformity depend on the properties of the amorphous silicon sensors.

Large Area Flexible Amorphous Silicon Position Sensitive Detectors

2000 ◽  
Vol 609 ◽  
Author(s):  
Elvira M.C. Fortunato ◽  
Donatello Brida ◽  
Isabel M.M. Ferreira ◽  
H. M.B. Åguas ◽  
Patrícia Nunes ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Spectral Response ◽  
Chemical Vapour ◽  
Open Circuit ◽  
Large Area ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Chemical Vapour Deposition Technique ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTLarge area thin film position sensitive detectors based on amorphous silicon technology have been prepared on polyimide substrates using the conventional plasma enhanced chemical vapour deposition technique. The sensors have been characterised by spectral response, illuminated I-V characteristics and position detectability measurements. The obtained one dimensional position sensors with 5 mm wide and 60 mm long present a maximum spectral response at 600 nm, an open circuit voltage of 0.6 V and a position detectability with a correlation of 0.9989 associated to a standard deviation of 1×10−2, comparable to those ones produced on glass substrates. The surface of the sensors at each stage of fabrication was investigated by Atomic Force Microscopy.

Insights on Amorphous Silicon Nip and MIS 3D Position Sensitive Detectors

2006 ◽  
Vol 514-516 ◽  
pp. 13-17 ◽  
Author(s):  
Rodrigo Martins ◽  
Daniel Costa ◽  
Hugo Águas ◽  
Fernanda Soares ◽  
António Marques ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Image Resolution ◽  
Mis Structure ◽  
Silicon Thin Film ◽  
One Dimensional ◽  
Operation Conditions ◽  
Plane Image ◽  
Position Sensitive ◽  
Position Sensitive Detectors ◽  
Better Than

This work aims to report results of the spatial and frequency optical detection limits of integrated arrays of 32 one-dimensional amorphous silicon thin film position sensitive detectors with nip or MIS structure, under continuous and pulsed laser operation conditions. The arrays occupy a total active area of 45 mm2 and have a plane image resolution better than 15 m with a cut-off frequency of about 6.8 kHz. The non-linearity of the array components varies with the frequency, being about 1.6% for 200 Hz and about 4% for the cut-off frequency (6.8 kHz).

Thin film position sensitive detectors based on pin amorphous silicon carbide structures

2001 ◽  
Vol 184 (1-4) ◽  
pp. 443-447 ◽  
Author(s):  
A. Cabrita ◽  
J. Figueiredo ◽  
L. Pereira ◽  
H. Águas ◽  
V. Silva ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Position Sensitive ◽  
Position Sensitive Detectors

Amorphous silicon position sensitive detectors applied to micropositioning

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1792-1796 ◽  
Author(s):  
J. Contreras ◽  
C. Baptista ◽  
I. Ferreira ◽  
D. Costa ◽  
S. Pereira ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Position Sensitive ◽  
Position Sensitive Detectors

scholarly journals Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors

Sensors ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 8173-8184 ◽  
Author(s):  
Javier Contreras ◽  
Daniel Costa ◽  
Sonia Pereira ◽  
Elvira Fortunato ◽  
Rodrigo Martins ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Movement Detection ◽  
Position Sensitive ◽  
Micro Cantilever ◽  
Position Sensitive Detectors

Role of the Collecting Resistive Layer on the Static Characteristics of 2D a-Si:H thin Film Position Sensitive Detector

1998 ◽  
Vol 507 ◽  
Author(s):  
E. Fortunato ◽  
R. Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Analytical Model ◽  
Sensitive Detector ◽  
Static Characteristics ◽  
Resistive Layer ◽  
Position Sensitive ◽  
Predicted Values ◽  
Position Sensitive Detectors

ABSTRACTThe aim of this work is to present an analytical model able to interpret the role of the thin collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated pin thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.

Hydrogenated Amorphous Silicon / ZnO Shottky Heterojunction for Position Sensitive Detectors

2001 ◽  
Vol 664 ◽  
Author(s):  
H. ǵuas ◽  
P. Nunes ◽  
E. Fortunato ◽  
R. Silva ◽  
V. Silva ◽  
...  
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Good Sensitivity ◽  
Transparent Substrate ◽  
Frequent Failure ◽  
Position Sensitive ◽  
Short Circuits ◽  
Position Sensitive Detectors ◽  
Hydrogenated Amorphous

ABSTRACTIn this work a new structure is proposed for position sensitive detectors consisting of glass/Cr/a-Si:H(n+)/a-Si:H(i)/ZnO, where the ZnO forms an heterojunction with the a-Si:H(i). The results show that this structure works with success in the fabrication of linear position sensitive detectors. The devices present a good nonlinearity of ͌ 2% and a good sensitivity tothe light intensity. The main advantages of this structure over the classical p-i-n are an easier to built topology and a higher yield due to a better immunity to the a-Si:H pinholes, since the ZnO does not diffuse so easily into a-Si:H as the metal does, which are the cause of frequent failure in the p-i-n devices due to short-circuits caused by the deposition of the metal over the a-Si:H. In this structure the illumination is made directly on the ZnO, so a transparent substrate is not needed and a larger range of substrates can be used.

Performances presented by large-area thin film position-sensitive detectors based on amorphous silicon

1996 ◽  
Vol 272 (1) ◽  
pp. 148-156 ◽  
Author(s):  
Elvira Fortunato ◽  
Guilherme Lavareda ◽  
Fernando Soares ◽  
Rodrigo Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Large Area ◽  
Position Sensitive ◽  
Position Sensitive Detectors
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