scholarly journals The Optimization of Interfaces in InAsSb/InGaAs Strained-Layer Superlattices grown by Metal-Organic Chemical Vapor Deposition

1994 ◽  
Vol 340 ◽  
Author(s):  
R. M. Biefeld ◽  
K. C. Baucom ◽  
S. R. Kurtz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface Layer ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) using a variety of growth conditions. The presence of an InGaAsSb interface layer is indicated by the x-ray diffraction patterns. The optimized growth conditions involved the use of low pressure, short purge times between the growth of the layers, and no reactant flow during the purges. We used MOCVD to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS / InPSb laser which emitted at 3.9 μm with a maximum operating temperature of approximately 100 K.

scholarly journals The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition

1993 ◽  
Vol 325 ◽  
Author(s):  
R. M. Biefeld ◽  
K. C. Baucom ◽  
S. R. Kurtz ◽  
D. M. Follstaedt
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermodynamic Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Metal Organic ◽  
Strained Layer Superlattices ◽  
Organic Chemical Vapor Deposition

AbstractWe have grown InAsl-xSbx/Inl-yGayAs strained-layer superlattice (SLS) semiconductors lattice matched to InAs using a variety of conditions by metal-organic chemical vapor deposition. The V/III ratio was varied from 2.5 to 10 at a temperature of 475 °C, at pressures of 200 to 660 torr and growth rates of 3 - 5 A/s and layer thicknesses ranging from 55 to 152 Å. The composition of the InAsSb ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. Diodes have been prepared using Zn as the p-type dopant and undoped SLS as the n-type material. The diode was found to emit at 3.56 μm. These layers have been characterized by optical microscopy, SIMS, x-ray diffraction, and transmission electron diffraction. The optical properties of these SLS's were determined by infrared photoluminescence and absorption measurements.

Thin films for superconducting electronics: Precursor performance issues, deposition mechanisms, and superconducting phase formation-processing strategies in the growth of Tl2Ba2CaCu2O8 films by metal-organic chemical vapor deposition

1997 ◽  
Vol 12 (5) ◽  
pp. 1214-1236 ◽  
Author(s):  
Bruce J. Hinds ◽  
Richard J. McNeely ◽  
Daniel B. Studebaker ◽  
Tobin J. Marks ◽  
Timothy P. Hogan ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Pressure ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Epitaxial Tl2Ba2CaCu2O8 thin films with excellent electrical transport characteristics are grown in a two-step process involving metal-organic chemical vapor deposition (MOCVD) of a BaCaCuO(F) thin film followed by a postanneal in the presence of Tl2O vapor. Vapor pressure characteristics of the recently developed liquid metal-organic precursors Ba(hfa)2 • mep (hfa = hexafluoroacetylacetonate, mep = methylethylpentaglyme), Ca(hfa)2 • tet (tet = tetraglyme), and the solid precursor Cu(dpm)2 (dpm = dipivaloylmethanate) are characterized by low pressure thermogravimetric analysis. Under typical film growth conditions, transport is shown to be diffusion limited. The transport rate of Ba(hfa)2 • mep is demonstrated to be stable for over 85 h at typical MOCVD temperatures (120 °C). In contrast, the vapor pressure stability of the commonly used Ba precursor, Ba(dpm)2, deteriorates rapidly at typical growth temperatures, and the decrease in vapor pressure is approximately exponential with a half-life of ∼9.4 h. These precursors are employed in a low pressure (5 Torr) horizontal, hot-wall, film growth reactor for growth of BaCaCuO(F) thin films on (110) LaAlO3 substrates. From the dependence of film deposition rate on substrate temperature and precursor partial pressure, the kinetics of deposition are shown to be mass-transport limited over the temperature range 350–650 °C at a 20 nm/min deposition rate. A ligand exchange process which yields volatile Cu(hfa)2 and Cu(hfa) (dpm) is also observed under film growth conditions. The MOCVD-derived BaCaCuO(F) films are postannealed in the presence of bulk Tl2Ba2CaCu2O8 at temperatures of 720–890 °C in flowing atmospheres ranging from 0–100% O2. The resulting Tl2Ba2CaCu2O8 films are shown to be epitaxial by x-ray diffraction and transmission electron microscopic (TEM) analysis with the c-axis normal to the substrate surface, with in-plane alignment, and with abrupt film-substrate interfaces. The best films exhibit a Tc = 105 K, transport-measured Jc= 1.2 × 105 A/cm2 at 77 K, and surface resistances as low as 0.4 mΩ (40 K, 10 GHz).

Variant structure in metal-organic-chemical-vapor-deposition-derived SnO2 thin films on sapphire (0001)

1995 ◽  
Vol 10 (6) ◽  
pp. 1516-1522 ◽  
Author(s):  
Donhang Liu ◽  
Q. Wang ◽  
H.L.M. Chang ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Metal Organic ◽  
Film Substrate ◽  
Organic Chemical Vapor Deposition

Tin oxide (SnO2) thin films were deposited on sapphire (0001) substrate by metal-organic chemical vapor deposition (MOCVD) at temperatures of 600 and 700 °C. The microstructure of the deposited films was characterized by x-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). At the growth conditions studied, films were single-phase rutile and epitaxial, but showed variant structures. Three distinct in-plane epitaxial relationships were observed between the films and the substrate. A crystallographic model is proposed to explain the film morphology. This model can successfully predict the ratio of the width to the length of an averaged grain size based upon the lattice mismatch of the film-substrate interface.

Growth optimization for high quality GaN films grown by metal-organic chemical vapor deposition

2008 ◽  
Vol 1068 ◽  
Author(s):  
Jung Hun Jang ◽  
A M Herrero ◽  
Seungyoung Son ◽  
B Gila ◽  
C Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Crystalline Quality ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTGaN layers were grown on c-plane sapphire substrates by using a conventional two step growth method via metal organic chemical vapor deposition (MOCVD). The effect of different growth conditions used in the deposition of the low temperature nucleation layer and high temperature islands on the crystalline quality of the GaN layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The polar (tilt) and azimuthal (twist) spread were estimated from the full width at half maximum (FWHM) values of the omega rocking curves (¥ø-RCs) recorded from the planes parallel and perpendicular to the sample surface. It was found from the XRD and TEM study that the edge and mixed type threading dislocations are dominant defects so that the relevant figure of merit (FOM) for the crystalline quality should be considered only by the FWHM value of ¥ø-RC of the surface perpendicular plane. The result showed that the mixed- and edge-types dislocations were strongly associated with the growth conditions used in the deposition of the nucleation layer and high temperature islands.

Metal Organic Chemical Vapor Deposition of Zinc Oxide

2005 ◽  
Vol 892 ◽  
Author(s):  
William E. Fenwick ◽  
Vincent T. Woods ◽  
Ming Pan ◽  
Nola Li ◽  
Matthew H. Kane ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractThin films of ZnO were grown by metal organic chemical vapor deposition (MOCVD) in a vertical injection rotating disk reactor (RDR) system on sapphire substrates. Kinetics of ZnO growth by MOCVD were studied and an optimal growth window for a RDR tool was determined. Experimental growth conditions were chosen based on calculations of Reynolds Number (Re) and mixed convection parameter in order to select a growth window with stable gas flow and uniform heat transfer. Growth parameters were systemically varied within this window to determine the optimal growth conditions for this MOCVD tool and to study how these parameters affect film growth and quality. Properties of ZnNiO films grown by MOCVD were also studied to determine the effects of Ni incorporation on structural, optical, and magnetic properties.

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