Studies of C60 Films Deposited Using Ionized Cluster Beam Deposition Technique

ABSTRACTFilms (with thicknesses about thousands A) of a new form of carbon allotrope, CIO also known as Fullerenes, are deposited on Si(111) substrates using ionized cluster beam deposition (ICBD) technique at low (65V) accelerating voltage V. X-ray &-20 diffraction (XRD) have been used to investigate the structural properties of C6Ofi lms, indicating hexagonal close-packed structure with strong (002) XRD assignment together with weak (100), (112) and(004) assignments. Raman spectra, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) are carried out to make detailed studies of the electronic properties of the films and to illustrate differences between CO films and amorphous carbon films which are deposited by ICBD at high accelerating voltage V >400V. Cio soccer-balls are found to be broken into fragments as accelerating field overtakes about 400V, indicated by the results of XPS, Raman spectra, XRD, and UV/visible absorption spectra.

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Oxidation of nanostructured Ti films produced by low energy cluster beam deposition: An X-ray Photoelectron Spectroscopy characterization

Thin Solid Films ◽

10.1016/j.tsf.2011.10.075 ◽

2012 ◽

Vol 520 (14) ◽

pp. 4803-4807 ◽

Cited By ~ 3

Author(s):

Monica de Simone ◽

Elena Snidero ◽

Marcello Coreno ◽

Gero Bongiorno ◽

Luca Giorgetti ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Low Energy ◽

Cluster Beam ◽

X Ray ◽

Cluster Beam Deposition ◽

Energy Cluster ◽

Beam Deposition ◽

Ti Films

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Fragmentation of C60 Molecules in Partially Ionized Fullerene Beam Deposition

MRS Proceedings ◽

10.1557/proc-359-429 ◽

1994 ◽

Vol 359 ◽

Author(s):

Zhong-Min Ren ◽

Xia-Xing Xiong ◽

Yuan-Cheng Du ◽

Zhi-Feng Ying ◽

Liang-Yao Chen ◽

...

Keyword(s):

Raman Spectra ◽

Amorphous Carbon ◽

Experimental Results ◽

Cluster Beam ◽

X Ray Diffraction ◽

X Ray ◽

Partially Ionized ◽

Almost All ◽

Cluster Beam Deposition ◽

Beam Deposition

ABSTRACTC60 films have been deposited using a partially ionized cluster beam deposition (PIBD) technique. The experimental results show that as Va. exceeds about 400 V almost all the C60 molecules fragmentate at collision with the substrate and the obtained films turn to be amorphous carbon layers at elevated Va, indicated by measurements of Raman spectra, X-ray diffraction, and ellipsometry.

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Photoluminescence and resonant Raman spectra of silicon films produced by size-selected cluster beam deposition

Physical Review B ◽

10.1103/physrevb.56.6958 ◽

1997 ◽

Vol 56 (11) ◽

pp. 6958-6964 ◽

Cited By ~ 148

Author(s):

M. Ehbrecht ◽

B. Kohn ◽

F. Huisken ◽

M. A. Laguna ◽

V. Paillard

Keyword(s):

Raman Spectra ◽

Silicon Films ◽

Cluster Beam ◽

Resonant Raman ◽

Cluster Beam Deposition ◽

Beam Deposition

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Deposition and Annealing Studies of Diamond-Like Carbon Grown by Molecular Beam Deposition

MRS Proceedings ◽

10.1557/proc-593-267 ◽

1999 ◽

Vol 593 ◽

Author(s):

Oliver Goetzberger ◽

Nobuaki Kojima ◽

Aurangzeb Khan ◽

Masafumi Yamaguchi

Keyword(s):

Electrical Conductivity ◽

Photoelectron Spectroscopy ◽

Molecular Beam ◽

Carbon Films ◽

Variable Range Hopping ◽

Annealing Behavior ◽

X Ray ◽

Temperature Dependence Of Conductivity ◽

Molecular Beam Deposition ◽

Beam Deposition

ABSTRACTStudies on the electrical conductivity of molecular beam deposited carbon films after annealing of the carbon films have been carried out. Detailed temperature dependence of conductivity on the as-deposited and on annealed samples has been investigated. The results were interpreted in terms of a model which includes a variable range hopping and strongly scattering metallic components. A correlation between annealing behavior of the electrical conductivity and the results of x-ray photoelectron spectroscopy and Raman spectroscopy is presented.

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CORRELATION BETWEEN FREE-CLUSTER PROPERTIES AND THIN FILMS ELABORATED BY LOW-ENERGY CLUSTER-BEAM DEPOSITION

Surface Review and Letters ◽

10.1142/s0218625x96001807 ◽

1996 ◽

Vol 03 (01) ◽

pp. 1007-1011

Author(s):

P. MÉLINON ◽

V. PAILLARD ◽

V. DUPUIS ◽

J.P. PEREZ ◽

J. TUAILLON ◽

...

Keyword(s):

Thin Films ◽

Carbon Cluster ◽

Carbon Films ◽

Low Energy ◽

Cluster Beam ◽

Free Cluster ◽

Cluster Properties ◽

Cluster Beam Deposition ◽

Energy Cluster ◽

Beam Deposition

The properties of thin films obtained by low-energy cluster-beam deposition are reviewed. The main characteristics are the nanoscale granular structure and the memory effect of the free-cluster properties. The first point is evidenced by the specific magnetic properties of transition-metal films, which are intermediate between amorphous and bulk phases, while the second point is illustrated from carbon films exhibiting the electronic structure of the free carbon cluster.

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First study of humidity sensors based on nanostructured carbon films produced by supersonic cluster beam deposition

Sensors and Actuators B Chemical ◽

10.1016/j.snb.2003.12.046 ◽

2004 ◽

Vol 100 (1-2) ◽

pp. 173-176 ◽

Cited By ~ 17

Author(s):

M Bruzzi ◽

S Miglio ◽

M Scaringella ◽

G Bongiorno ◽

P Piseri ◽

...

Keyword(s):

Carbon Films ◽

Cluster Beam ◽

Nanostructured Carbon ◽

Humidity Sensors ◽

Cluster Beam Deposition ◽

Beam Deposition

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XPS Spectra of Cu Thin Films Prepared by Ionized Cluster Beam Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.549.720 ◽

2012 ◽

Vol 549 ◽

pp. 720-723

Author(s):

Bo Cao ◽

Tong Rui Yang ◽

Gong Ping Li ◽

Seong Jin Cho ◽

Hee Kim

Keyword(s):

Thin Films ◽

Binding Energy ◽

Photoelectron Spectroscopy ◽

Copper Films ◽

Cluster Beam ◽

Xps Spectra ◽

P Type ◽

Cluster Beam Deposition ◽

Atomic Binding Energy ◽

Beam Deposition

The Cu thin films were deposited on P type Si (111) substrates by ionized cluster beam (ICB) technique. The surface properties and atomic binding energy of Cu thin films were studied by X-ray Photoelectron Spectroscopy (XPS). The results show that for all XPS spectra of Cu/SiO2/Si (111) samples deposited by neutral cluster and ionized cluster beam (Va=5 kV), the atomic binding energy of the films was no differences with bulk materials. The reason may be that the local energy deposition and atomic restructuring caused by surface treatment process resulting in the XPS spectra of the copper films was similar with bulk standard copper.

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